| Evaluating Superconducting YBCO Film Properties Using X-Ray Photoelectron Spectroscopy (Postprint) |
Feb 2012 |
11 pages |
| Authors:
Paul N Barnes; Justin C Tolliver; Timothy J Haugan; Sharmila M Mukhopadhyay; John T Grant; AIR FORCE RESEARCH LAB WRIGHT-PATTERSON AFB OH PROPULSION DIR/POWER DIV/MECHANICAL ENERGY CONVERSION BRANCH
|
 | Initial results have been recently reported that suggest a potential correlation exists between the full-width-half-maximum (FWHM) of the Y(3d) peak obtained by x-ray photoelectron spectroscopy (XPS) and the critical current density a YBa2Cu3O7-x film can carry. In particular, the Y(3d5/2) demonstrated a stronger correlation. Transport currents were determined by the 4-point contact method using the 1?V/cm criterion. An apparent correlation was also suggested between the Y(3d) FWHM and ac loss ... |
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| Polymeric and Molecular Materials for Advanced Organic Electronics |
25 Jul 2011 |
21 pages |
| Authors:
Tobin J Marks; Antonio Facchetti; Ananth Dodabalapur; NORTHWESTERN UNIV EVANSTON IL DEPT OF CHEMISTRY
|
| During the project period, we made strong progress in: I) organic semiconductors, 2) gate dielectrics, and 3) fundamental studies of charge transport. In 1), we expanded our understanding of the architectural and electronic structure requirements for n-type semiconductors and the role grain boundaries play in transport. To accomplish this, we developed new synthetic routes to processable small molecules and polymers, and characterized/optimized structural, electronic, and processing properties. In 2), we ... |
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| Ultrathin Compound Semiconductor on Insulator Layers for High-Performance Nanoscale Transistors |
11 Nov 2010 |
5 pages |
| Authors:
Hyunhyub Ko; Kuniharu Takei; Rehan Kapadia; Steven Chuang; Hui Fang; Paul W Leu; Kartik Ganapathi; Elena Plis; Ha Sul Kim; Szu-Ying Chen; NEW MEXICO UNIV ALBUQUERQUE DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE
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| Over the past several years, the inherent scaling limitations of silicon (Si) electron devices have fuelled the exploration of alternative semiconductors, with high carrier mobility, to further enhance device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied: such devices combine the high mobility of III-V semiconductors and the well established, low-cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth ... |
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| Synthesis of Polyimides Produced from Novel High Temperature Polyhedral Oligomeric Silsesquioxane Dianilines |
26-Mar-2009 |
3 pages |
| Authors:
Vandana Vij; Joseph M Mabry; Timothy S Haddad; Gregory R Yandek; AIR FORCE RESEARCH LAB EDWARDS AFB CA PROPULSION DIRECTORATE
|
| Polyimides (PIs) are used extensively in a variety of applications such as circuit-printing films and semiconductor coatings in the microelectronics industry, spacecraft materials including solar arrays, thermal insulation blankets, and space inflatable structures, and in components in modern aircraft. PIs are well known for their thermal stability but are prone to long-term oxidative degradation and are notorious for having hydrothermal issues, especially when used in fiber-reinforced composites. A potential approach ... |
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| Flex Biohybrid Nanomembranes as a Platform for Multifunctional Sensors |
10 OCT 2007 |
11 pages |
| Authors:
Vladimir V. Tsukruk; GEORGIA INST OF TECH ATLANTA SCHOOL OF TEXTILE AND FIBER ENGINEERING
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| The main focus of current activities was on synthesis of new branched and peptide-containing molecules and further development of sophisticated freely standing membranes with micropatterned structure. We synthesized several new amphiplilic hyperbranched molecules and silver-binding peptide for further incorporation into membrane film. Freely-standing arrays of carbon nanotubes and gold nanoparticles were fabricated as well and their properties tested with micromechanical studies and Raman spectroscopy. Specifically we studied: flexible nanomembranes with ... |
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| Study on Wide-gap Gallium-nitride Based Films and Their Quantum-dots Devices |
05 SEP 2006 |
95 pages |
| Authors:
Huey-Liang Hwang; Jung-Min Hwang; Brian Yei; Kuan-Feng Lee; NATIONAL TSING HUA UNIV HSINCHU (TAIWAN) INST OF ELECTRONICS ENGINEERING
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| Wide-gap III-Nitride based white light emission had been proven to yield luminescence efficiency (20-30 Lumen/W) and the III-Nitride devices proved long lifetime (>10khr). It is expected that high efficiency III-Nitride based white light emission will be the major lighting source for daily illumination in the coming decades. In 1998, the world energy consumption of energy is 69,000 TWh. There had been 2300 TWh consumption in illumination with rather inefficiently way. ... |
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| Characterization of the Field Emission Properties of Carbon Nanotubes Formed on Silicon Carbide Substrates by Surface Decomposition |
MAR 2006 |
180 pages |
| Authors:
Michael C. Pochet; AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING AND MANAGEMENT
|
| Dense arrays of vertically aligned carbon nanotubes (CNTs) form on the surface of silicon carbide wafers during high temperature anneals under moderate vacuum conditions. The novelty of this growth method is that the CNTs form without the aid of a metal catalyst, allowing for potentially impurity-free CNTs to form. In this study, CNT films were grown by the surface decomposition of silicon carbide substrates. The associated field emission characteristics were ... |
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| Conjugated Polymer Sensors: Design Principles Towards Enhanced Versatility |
DEC 2004 |
|
| Authors:
S. W. Thomas III; T. M. Swager; MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF CHEMISTRY
|
 | A description of how semiconducting fluorescent polymers function as chemosensors for a variety of chemical vapors is presented. Amplification is achieved by transport of optically induced excitations throughout a polymer film. Careful and thoughtful design of polymer chemical structures is crucial to achieving high sensitivity towards nitroaromatic explosives such as trinitrotoluene (TNT) and dinitrotoluene (DNT). These semiconductive materials have been incorporated into functional sensory devices used for ultratrace explosive detection ... |
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| Lifetime and Longevity of an Intense, Photoconductivity - Switched Stacked Blumlein Modulator for Ultra - Wideband HPM Applications |
28 JUL 2003 |
58 pages |
| Authors:
Carl B. Collins; Farzin Davanloo; TEXAS UNIV AT DALLAS RICHARDSON CENTERFOR QUANTUM ELECTRONICS
|
| In this work, experiments with the stacked Blumlein prototype pulsers were conducted under different conditions of operation at power levels bypassing 100 MW. Special attention was placed on broadening of the current channels in the avalanche photoconductive switch in order to improve lifetime. The mechanical and semiconductor properties of amorphic diamond were employed to improve the lifetime by coating the switch cathode or anode areas or both. Issues concerning the ... |
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| Laterally Overgrown Structures as Substrates for Lattice Mismatched Epitaxy |
21 MAY 2003 |
12 pages |
| Authors:
Z. R. Zytkiewicz; POLISH ACADEMY OF SCIENCES WARSAW INSTOF PHYSICS
|
| This article provides a general review of epitaxial lateral overgrowth (ELO) technology and of the application of ELO layers as substrates with an adjustable value of lattice constant. In particular, the issues of ELO growth mechanism, substrate defect filtration during ELO procedure, and strain in ELO layers will be addressed. Recent data on Metalorganic Vapor Phase Epitaxy (MOVPE) ELO growth of Gallium Nitride (GaN) on sapphire and the author's results ... |
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| Influence of Covering on Critical Thickness of Strained In(x)Ga(1-x)As Layer |
21 MAY 2003 |
5 pages |
| Authors:
Agata Jasik; Kamil Kosiel; Wlodzimierz Strupinski; Marek Wesolowski; INSTITUTE OF ELECTRONIC MATERIALS TECHNOLOGY WARSAW (POLAND)
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| This study examined the critical layer thickness (CLT) of mismatched epitaxial layers and strained heterostructures. Samples consisting of In(x)Ga(1-x)As/InP and In(0.52)Al(0.48)As/In(x)Ga(1-x)As/In(0.52)Al(0.48)As/InP were grown on Indium Phosphorus (InP) substrates by low pressure metalorganic vapor phase epitaxy (LP-MOVPE). Atomic force microscopy (AFM) was used to observe misfit dislocation generation. When the layer is buried in the heterostructure, its critical layer thickness increases. These investigations have shown how many times this value may ... |
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| Polarity Selection Process and Polarity Manipulation of GaN in MOVPE and RF-MBE Growth |
21 MAY 2003 |
6 pages |
| Authors:
A. Yoshikawa; K. Xu; CHIBA UNIV (JAPAN) CENTER FOR FRONTIERELECTRONICS AND PHOTONICS
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| The polarity-controlled growth of Gallium Nitrides (GaN) on a sapphire substrate by metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) was demonstrated. The mechanisms for polarity reversion of GaN by TMAl preflow in MOVPE growth and high-temperature deposited Aluminum Nitride (AlN) intermediate layers in MBE growth were discussed based on the two monolayers of Aluminum (Al)' model. The kinetic process of GaN polarity selection on a sapphire substrate, ... |
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| Shadow Mask Technology |
21 MAY 2003 |
6 pages |
| Authors:
T. Schallenberg; C. Schumacher; S. Gundel; W. Faschinger; WUERZBURG UNIV (GERMANY F R) PHYSIKALISCHES INST
|
| This study investigated molecular beam epitaxy (MBE) regrowth through shadow masks developed from AlGaAs/GaAs layers on GaAs 001 substrates. Adjusting the directions of the molecular beams relative to the masks results in in situ lateral structuring. This enabled the authors to modify doping and composition within one layer, to shift it laterally, and even to split it or to reduce its width relative to the mask's aperture. The resolution of ... |
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| Solvothermal Molecular Precursor Routes to Semiconductor Film and Crystal Growth |
AUG 2002 |
7 pages |
| Authors:
Edward G. Gillan; IOWA UNIV IOWA CITY DEPT OF CHEMISTRY
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| This research project explored the utility of molecular precursor decomposition in superheated non-aqueous solvents directed towards semiconductor crystal growth. Reactions were run in toluene, THF, and under solvent free conditions. An in situ precursor synthesis and decomposition resulted in GaN nanoparticles from simple starting materials (GaCl(3) and NaN(3)). Particle sizes range from about 10 to hundreds of nanometers. Upon annealing to 1000 degrees C, the poorly crystalline products ordered into ... |
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| THIN SOLID FILMS: An International Journal on the Science and Technology of Condensed Matter Films. Volume 412 Nos. 1-2, June 3, 2002. Proceedings of the Workshop on MBE and VPE Growth, Physics, Technology (4th), Held in Warsaw, Poland, on 24-28 September |
03 JUN 2002 |
149 pages |
| Authors:
J. E. Greene; P. Desjardins; J. Kossut; POLISH ACADEMY OF SCIENCES WARSAW INSTOF PHYSICS
|
| Contents: Preface (J. Kossut); Hybrid epitaxial structures for spintronics (J. De Boeck, W. Van Roy, et al.); Size effects in epitaxial films of magnetite (J. Korecki, B. Handke, et al.); Shadow mask technology (T. Schallenberg, C. Schumacher, et al.); Trions as a probe of spin injection through II-VI magnetic/non-magnetic heterointerface (M. Ghali, J. Kossut. et al. ); The growth modes of epitaxial Au/Co/Au sandwiches (A. Wawro, L.T. Baczewski, et al.); ... |
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| MBE Growth and Characterization of Hg Based Compounds and Heterostructures |
03 JUN 2002 |
10 pages |
| Authors:
C. R. Becker; X. C. Zhang; K. Ortner; J. Schmidt; A. Pfeuffer-Jeschke; WUERZBURG UNIV (GERMANY F R) PHYSIKALISCHES INST
|
| The molecular beam epitaxy (MBE) growth of Mercury Cadmium Telluride (Hg(1-x)Cd(x)Te) alloys and type III HgTe/Hg(1-x)Cd(x)Te heterostructures has been discussed, including similarities and differences between the (0 0 1) and (1 1 2)Beta orientations. Furthermore, the MBE growth of HgTe-based quantum wells (QWs) with the incorporation of Mn are additional topics. An investigation of the optical properties of type III superlattices with a normal band structure has lead to information ... |
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| Ferromagnetic GaMnAs/GaAs Superlattices - MBE Growth and Magnetic Properties |
03 JUN 2002 |
7 pages |
| Authors:
J. Sadowski; R. Mathieu; P. Svedlindh; M. Karlsteen; J. Kanski; POLISH ACADEMY OF SCIENCES WARSAW INSTOF PHYSICS
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| This paper presents the results of a study of the magnetic properties of Gallium Manganese Arsenide/Gallium Arsenide GaMnAs/GaAs) superlattices with magnetic GaMnAs layers of thickness between 8 and 16 molecular layers (ML) (23-45 angstroms) and with nonmagnetic GaAs spacers from 4 to 10 ML (11-28 angstroms). While previous reports state that GaMnAs layers thinner than 50 angstroms are paramagnetic in the whole Mn composition range achievable using molecular beam epitaxy ... |
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| MOVPE Technology and Characterisation of Silicon delta-Doped GaAs and A1(x)Ga(1-x)As |
03 JUN 2002 |
5 pages |
| Authors:
B. Sciana; D. Radziewicz; B. Paszkiewicz; M. Tlaczala; M. Utko; WROCLAW UNIV OF TECH (POLAND) FACULTY OF MICROSYSTEM ELECTRONICS AND PHOTONICS
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| This work presents the investigation of Metalorganic Vapor Phase Epitaxy (MOVPE) growth of silicon delta-doped Gallium Arsenide (GaAs) and Aluminum Gallium Arsenide (Al(x)Ga(1-x)As) epilayers and different methods used for their characterization. The influence of growth temperature, SiH(4) flow rate and Al(x)Ga(1-x)As composition on delta-doping characteristics is discussed. Properties of the Silicon (Si) delta-doped structures were examined using capacitance-voltage (C-V) measurements, photoreflectance spectroscopy, micro-photoluminescence, micro-Raman spectroscopy, and photocurrent spectroscopy. (5 figures, ... |
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| The Growth Modes of Epitaxial Au/Co/Au Sandwiches |
03 JUN 2002 |
4 pages |
| Authors:
A. Wawro; L. T. Baczewski; P. Pankowski; M. Kisielewski; I. Sveklo; POLISH ACADEMY OF SCIENCES WARSAW INSTOF PHYSICS
|
| This study investigated the optimum growth conditions of epitaxial Gold/Cobalt/Gold (Au/Co/Au) sandwiches with a strong perpendicular magnetic anisotropy. The thermally induced evolution of sandwich morphology, which determines its magnetic properties, was studied by means of reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES). The roughness of Au and Co surfaces, affected by the sample annealing, was evaluated from the length-dependent variance of topography acquired by atomic force microscopy. ... |
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| Size Effects in Epitaxial Films of Magnetite |
03 JUN 2002 |
10 pages |
| Authors:
J. Korecki; B. Handke; N. Spiridis; T. Slezak; I. Flis-Kabulska; POLISH ACADEMY OF SCIENCES KRAKOW INSTOF CATALYSIS AND SURFACE CHEMISTRY
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| Recent results concerning epitaxial Fe(3)O(4) (001) films grown by reactive deposition on MgO (001) substrates as well as obtained by oxidation of epitaxial Fe (001) films are reviewed. Conversion electron Mossbauer spectroscopy (CEMS) performed in and ex situ was used to check the stoichiometry and electronic properties with monolayer resolution. Size effects were reflected in reduction of the Verwey temperature for film thickness less than 50 nanometers. With further decreases ... |
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| Hybrid Epitaxial Structures for Spintronics |
03 JUN 2002 |
11 pages |
| Authors:
J. De Boeck; W. Van Roy; V. Motsnyi; Z. Liu; K. Dessein; INTERUNIVERSITY MICRO-ELECTRONICS CENTER LOUVAIN (BELGIUM)
|
| Molecular beam epitaxy (MBE) has been used very successfully over the past 10 years to produce the most interesting spintronic heterostructures. This paper illustrates the strength of MBE in realizing materials combinations that can lead to efficient spin-injection. The paper is not an exhaustive description of all possible materials combinations, but a review of some important aspects of spin-source fabrication. In line with today's emphasis on demonstrating the spin-injection process ... |
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| Request for Critical Components for MBE and MOVCD to Pursue High Purity GaN at Virginia Microelectronics Center (VMC) |
25 OCT 2001 |
27 pages |
| Authors:
Hadis Morkoc; VIRGINIA COMMONWEALTH UNIV RICHMOND SCHOOL OF ENGINEERING
|
| A Lake Shore Model 7504 variable temperature Hall measurement apparatus was procured and installed in August 2000. The system has been in use for nearly a year now and has already become a indispensable component of our research effort. Since the funds provided were not sufficient for a brand new one, we opted to purchase a laboratory model with warranty identical to that for a standard system. The apparatus is ... |
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| Augmented Student Participation in Theoretical Investigation of Point Defects and Defect Complexes in Low-Temperature-Grown GaAs |
14 JUN 2001 |
46 pages |
| Authors:
Caroline G. Morgan; WAYNE STATE UNIV DETROIT MI
|
| This AASERT grant is a supplementary grant which has provided funding for additional student involvement in the work supported by AFOSR grant Number 49620-96-1-0162, 'Theoretical Investigation of Point Defects and Defect Complexes in Low-Temperature-Grown GaAs'. The major aim of this research has been a theoretical investigation of: (1) important point defects and defect complexes in low-temperature-grown (LT) GaAs, and (2) the microscopic processes occurring at the surface during growth of ... |
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| Comparison of Dye Photoluminescence Spectra in Direct and Inverted Opaline Films |
JUN 2001 |
3 pages |
| Authors:
S. G. Romanov; T. Maka; C. M. Sotomayor-Torres; M. Mueller; R. Zentel; RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
|
| Changes introduced by a photonic bandgap environment in an emission spectrum of a light source have been compared for direct and inverted opals and a qualitative difference has been revealed. |
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| Calibration Issues of Tekscan Systems for Human Pressure Assessment |
MAY 2001 |
8 pages |
| Authors:
E. L. Murin; J. T. Bryant; S. A. Reid; M. Se; R. A. Whiteside; QUEEN'S UNIV KINGSTON (ONTARIO)
|
| The Tekscan pressure sensor system has been designed for relatively easy measurement of contact pressures between two opposing surfaces. However, several factors are known to affect Tekscan sensor output. This paper reports on two pilot studies which were done to investigate the effects of contact surface compliance and changes in the system hardware on Tekscan sensor output In the first study linear calibration curves were calculated for a single Tekscan ... |
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| Nonresonant Laser-Matter Interaction (NLMI-10) Held in St. Petersburg- Pushkin, Russia on 21-23 Aug 2000 |
AUG 2000 |
326 pages |
| Authors:
Mikhail N. Libenson; SCIENTIFIC COUNCIL OF THE ST PETERSBURGASSOCIATION OF SCIENTISTS AND SCHOLARS (RUSSIA)
|
| This report presents the Final Proceedings for Nonresonant Laser- Matter Interaction 10, 21 August 2000 - 23 August 2000 Proceedings of SPIE, Vol. 4423. This is an interdisciplinary conference. Topics include structural and phase transitions in condensed matter; laser damage of optical materials and elements; laser-induced surface phenomena; instabilities and self-organization under laser conditioning; and interaction of ultrashort pulses with matter. |
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| Stoechimetrieuntersuchungen von Schichtsystemen fuer die Nanoelektronik (Stoichiometry Experiments of Layer Systems for Nanoelectronics) |
MAR 2000 |
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| Authors:
Peter Bieringer; UNIVERSITAET DER BUNDESWEHR MUENCHEN NEUBIBERG (GERMANY) FAKULTAET FUER ELEKTROTECHNIK
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| The study deals with problems in the stoichiometric analysis of thin layers in silicon semiconductors, with the secondary mass-spectrometric system (SIMS) and the Rutherford backscatter spectrometric system (RES) selected as analytical methods. The appropriateness of these methods to the tests concluded is demonstrated ultimately in the study: SIMS is proven to be unfit, whereas the RBS system, as the author expected from the beginning, exemplifies the barometer by which the ... |
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| Cryptosporidium. A Threat to The Irish Food And Drink Industry. |
12 AUG 1999 |
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| Authors:
Ian Blair; ULSTER UNIV AT JORDANSTOWN NEWTOWNABBEY(UNITED KINGDOM)
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| The manufacture of safe and healthy products is of paramount importance to Ireland's food and drink industry. Therefore all producers should be aware of the potential threat posed by cryptosporidium to safe food production. Accurate and specific information about the occurrence and prevalence of this organism in the Irish food chain is sparse and there has been little published on food or drink related outbreaks of cryptosporidiosis in ireland. However, ... |
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| Electronic Devices Grown on Off-Axis Sapphire Substrate |
15 JUL 1999 |
19 pages |
| Authors:
Mohammad Fatemi; A. E. Wickenden; Daniel Koleske; Richard Henry; Mark Twigg; DEPARTMENT OF THE NAVY WASHINGTON DC
|
| An electronic device characterized by a 10-300 micron thick sapphire crystal substrate having a polished off alpha-plane growth surface, a 10-1000 angstrom thick nucleating layer disposed on the substrate for promoting film growth thereon, and a 0.1 - 10 micron thick semiconducting film disposed on the nucleating layer. |
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| Influence of Initial MBE Growth Stage on Properties of Hexagonal InN/Al2O3 Films |
18 JUN 1999 |
4 pages |
| Authors:
V. V. Mamutin; V. A. Vekshin; V. Y. Davydov; V. V. Ratnikov; V. V. Emtsev; RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
|
| The InGaN alloys have acquired a lot of interest for using in the active region of light emitting and lasers diodes as the band gap of these materials can be varied over nearly the whole visible spectral range when changing In content from 0 to pure InN. However due to the low dissociation temperature of InN (about 63O C ) and the nitrogen equilibrium vapor pressure with a growth temperature ... |
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| Nitrogen Chemisorbed Layers on GaAs(100): Formation, Properties, Applications |
18 JUN 1999 |
4 pages |
| Authors:
V. L. Berkovits; V. P. Ulin; T. V. L'Vova; Akira Izumi; RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
|
| We propose a novel wet chemical technology to form continuous nitride films on GaAs (100). For this nitridation hydrazine (N2H4 )-based water solutions are used X-ray photoemission analysis has shown that on the nitridized surfaces Ga-N surface bonds are dominant. We demonstrate that the proposed nitridation improves electronic properties of GaAs(100) and produce an effective surface chemical passivation. |
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| The Influence of Deposition Parameters on the Structure of Nanocrystalline Silicon |
18 JUN 1999 |
4 pages |
| Authors:
E. I. Terukov; V. K. Kudoyarova; V. Y. Davydov; K. V. Koughia; G. Weiser; RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
|
| Nanocrystalline silicon films have been produced by PECVD metbod in SiH4 t H2 gas mixtures. Raman spectral IR absorption and absorption edge of the films have been investigated in a function of such deposition parameters as the gas dilution ratio H2O contamination the deposition temperature (T(d)) and the material of the substrate. The study of IR spectra has showed the presence of bonded hydrogen, with the total concentration (CH) varying ... |
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| Clostridium botulinum in the Food Chain. |
12 MAY 1999 |
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| Authors:
Rhodri Evans; UNIVERSITY COLL DUBLIN (IRELAND)
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| Radiation-Hardened Silicon-on-Insulator 0.8-Micrometer Technology Design Rules |
MAY 1999 |
35 pages |
| Authors:
B. W. Offord; J. S. Ruthberg; SPACE AND NAVAL WARFARE SYSTEMS COMMANDSAN DIEGO CA
|
| This document describes design rules for a radiation-hardened silicon-on-insulator (RHSOI) process presently under development at SSC San Diego. SSC San Diego's targeted design rules are an outgrowth of CMOSN 1 .0- micrometer design rules, with a few modifications for compatibility with future system requirements. Alternatively, CMOSN 1.2-micrometer design rules may be used. |
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| Polarized Optical Emission Due to Decay or Recombination of Spinpolarized Injected Carriers |
23 FEB 1999 |
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| Authors:
Berend T. Jonker; DEPARTMENT OF THE NAVY WASHINGTON DC
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| A device for producing circularly polarized optical emission includes a light emitting semiconductor heterostructure, further including at least one semiconducting layer; a ferromagnetic contact having a magnetic moment, in electrical contact with a layer of the semiconductor heterostructure; and a contact electrically connected to a different region of the semiconductor heterostructure. This light emitting semiconductor heterostructure may be a light emitting diode (LED), or some other structure. The ferromagnetic contact ... |
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| FINAL RECORD OF THE EIGHT HUNDRED AND ELEVENTH PLENARY MEETING HELD AT THE PALAIS DES NATIONS, GENEVA, SWITZERLAND ON 28 JANUARY 1999. |
28 JAN 1999 |
|
| Authors:
UNITED NATIONS CONFERENCE ON DISARMAMENT GENEVA (SWITZERLAND)
|
| AT THE 811TH PLENARY MEETING REPRESENTATIVES FROM FINLAND, MEXICO, BRAZIL AND SOUTH AFRICA ADDRESSED THE CONFERENCE ATTENDEES. THE SUBJECTS DISCUSSED INCLUDED NEGOTIATION OF A NUCLEAR VERIFICATION PROTOCOL, THE FISSILE MATERIAL CUT-OFF TREATY, ANTI-PERSONNEL LANDMINES, START 2, AND INTERNATIONAL SECURITY. |
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| FINAL RECORD OF THE EIGHT HUNDRED AND TENTH PLENARY MEETING HELD AT THE PALAIS DES NATIONS, GENEVA, SWITZERLAND ON 26 JANUARY 1999. |
26 JAN 1999 |
|
| Authors:
UNITED NATIONS CONFERENCE ON DISARMAMENT GENEVA (SWITZERLAND)
|
| AT THE 810TH PLENARY MEETING THE SECRETARY- GENERAL OF THE UNITED NATIONS, MR KOFI ANNAN, AND REPRESENTATIVES FROM EGYPT AND COLOMBIA ADDRESSED THE CONFERENCE ATTENDEES. MR. ANNAN FOCUSED HIS PRESENTATION ON THE PROGRESS AND SUCCESSES OF THE CONFERENCE ON DISARMAMENT. HE REFLECTED ON ALL PAST NEGOTIATIONS AND ON-GOING NEGOTIATIONS FOR INSTRUMENTS OF DISARMAMENT SUCH AS THE COMPREHENSIVE TEST-BAN TREATY, BIOLOGICAL WEAPONS CONVENTION, AND THE PARTIAL BAN ON LANDMINES. THE EGYPTIAN ... |
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| FINAL RECORD OF THE EIGHT HUNDRED AND NINTH PLENARY MEETING HELD AT THE PALAIS DES NATIONS, GENEVA, SWITZERLAND ON 21 JANUARY 1999. |
21 JAN 1999 |
|
| Authors:
UNITED NATIONS CONFERENCE ON DISARMAMENT GENEVA (SWITZERLAND)
|
| AT THE 809TH PLENARY MEETING REPRESENTATIVES FROM ITALY, THE UNITED STATES, ROMANIA, AND PERU ADDRESSED THE CONFERENCE ATTENDEES. THE SUBJECTS DISCUSSED INCLUDED THE CHEMICAL WEAPONS CONVENTION, THE COMPREHENSIVE TEST-BAN TREATY, THE ORGANIZATION FOR SECURITY AND COOPERATION IN EUROPE, THE TREATY ON CONVENTIONAL ARMED FORCES IN EUROPE, AND INTERNATIONAL SECURITY. THE UNITED STATES' REPRESENTATIVE, MR. JOHN HOLUM, FOCUSED HIS DISCUSSION ON THE COMPREHENSIVE TEST-BAN TREATY AND THE NEGOTIATION OF A FISSILE ... |
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| CONTROLLING ANTI-PERSONNEL LANDMINES. |
01 DEC 1998 |
|
| Authors:
STEVEN BIDDLE; JULIA KLARE; JOHNATHAN WALLIS; IVAN OELRICH
|
| PERHAPS 80 TO 110 MILLION UNEXPLODED LANDMINES ARE NOW SCATTERED OVER 64 COUNTRIES WORLD-WIDE. THESE MINES KILL OR MAIN AS MANY AS 2,000 PEOPLE A MONTH. A VARIETY OF INITIATIVES HAVE BEEN PROPOSED TO REDUCE THIS TOLL, THE MOST PROMINENT OF WHICH HAS BEEN AN INTERNATIONAL MOVEMENT TO BAN ANTI-PERSONNEL MINES. THIS PAPER EVALUATES THE MERITS OF SUCH A BAN BY ANALYZING ITS ASSERTED BENEFITS AND COSTS. WE FIND THAT ... |
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| AASERT: High Temperature Superconducting Compounds |
01 SEP 1998 |
4 pages |
| Authors:
Allen M. Goldman; MINNESOTA UNIV MINNEAPOLIS SCHOOL OF PHYSICS AND ASTRONOMY
|
| Selective epitaxial growth of DyBa2Cu3O7 using Dy(1-delta)Cu(delta)Ox templates has produced superconducting wires as small as 2 um in width. A systematic study of the effects of template composition on the superconducting wires was undertaken. The lateral diffusion of Dy and Cu from the template into the wires was measured with characteristic x-ray maps. Optimized templates were found to be useful in defining device size features without ... |
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| Radiation-Hardening of SOI by Ion Implantation into the Buried Oxide Layer |
18 AUG 1998 |
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| Authors:
Harold Hughes; Patrick McMarr; DEPARTMENT OF THE NAVY WASHINGTON DC
|
| The radiation hardness of a silicon-on-insulator structure is improved by implanting dopant ions such as Si into the buried oxide layer. The dopant ions are implanted in the buried oxide layer, near, but not at the active Si layer/buried oxide layer interface. This implantation creates electron traps/recombination centers in the buried oxide layer. |
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| Ultra-Thin Silicon Complaint Layers for Infrared Materials |
AUG 1998 |
9 pages |
| Authors:
Fritz J. Kub; Karl D. Hobart; NAVAL RESEARCH LAB WASHINGTON DC
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| A simple method for the manufacture of an ultra-thin (<5nm) silicon layer that is bonded to a handle substrate for compliant substrate applications has been demonstrated. Compliant substrates have potential benefit for reducing defects in epitaxial materials grown on a large lattice mismatched substrates, including the growth of CdTe and HgCdTe on silicon substrates. In addition, an approach to fabricate a HgCdTe detectors directly over CMOS readout circuitry by epitaxially ... |
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| Correlation Between Structural and Optical Properties of Nanocrystal Particles Prepared at Low Temperature Plasma-Enhanced Chemical Vapor Deposition |
JUN 1998 |
4 pages |
| Authors:
D. Milovzorov; T. Inokuma; Y. Kurata; S. Hasegawa; KANAZAWA UNIV (JAPAN)
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| We have synthesized poly-Si films with controlled size distribution of nanocrystals and sufficient luminescent properties. The correlation between structural and optical properties of the poly-Si films allows us to determine the optimal deposition conditions for preparation films with high PL response with narrow width of energy. |
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| AT ONE YEAR, CWC PROGRESS TEMPERED BY LIMITED TRANSPARENCY. |
01 APR 1998 |
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| Authors:
ARMS CONTROL ASSOCIATION WASHINGTON DC
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| THE FIRST YEAR OF FORMAL ACTIVITY FOR THE CHEMICAL WEAPONS CONVENTION (CWC) SINCE ITS ENTRY INTO FORCE ON APRIL 1997 HAS BEEN MEASURED PROGRESS TOWARD THE ESTABLISHMENT OF A GLOBAL NORM AGAINST THE POSSESSION, PRODUCTION, TRANSFER OR USE OF CHEMICAL WEAPONS (CW). NOW RATIFIED BY 108 COUNTRIES, INCLUDING THE MAJOR CW POSSESSORS (RUSSIA AND THE UNITED STATES) AND A NUMBER OF SUSPECTED CW STATES SUCH AS IRAN AND PAKISTAN, THE ... |
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| IUPAC Working Party on Chemical Weapons Destruction Technologies. |
22 MAR 1998 |
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| Authors:
GRAHAM S. PEARSON; BRADFORD UNIV (UNITED KINGDOM)
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| The International Union of Pure and Applied Chemistry (IUPAC) working party on chemical weapons destruction technologies has been set up to carry out an independent review of the chemical weapon destruction technologies which have been demonstrated to be effect for the destruction of chemical warfare agents. The working party is affiliated with the IUPAC Committee on Chemical Weapons Destruction Technologies. The aim of the working party is to carry out ... |
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| Activities of NATO in the Field of CW Demilitarization Technologies. |
22 MAR 1998 |
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| Authors:
F. Volk; H. SCHUBERT; FRAUNHOFER-INST FUER CHEMISCHE TECHNOLOGIE PFINZTAL (GERMANY)
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| This paper deals with the activities of the NATO Advisory Panel on Disarmament Technologies in organizing so-called Advanced Research Workshops (ARW) in the field of chemical weapons. The aim was to characterize the different chemical weapons and agents which are released from World War I and II and from later periods and which are stored in a variety of containment systems, also to find out the problem of the ecological ... |
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| Overview of the United States Chemical Demilitarization Program. |
22 MAR 1998 |
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| Authors:
Theodore Prociv; DEPUTY ASSISTANT TO THE SECRETARY OF DEFENSE (ATOMIC ENERGY) (CHEMICAL MATTERS) WASHINGTON DC
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| The United States Chemical Demilitarization Program has been in operation for approximately eight years. The original US stockpile of chemical weapons (CW) totaled some 31,000 agent tons and is situated at eight locations in the continental US with an additional site at Johnston Island in the Pacific Ocean. To date, 11.49 percent of that stockpile has been destroyed. With the entry into force of the Chemical Weapons Convention (CWC) on ... |
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| An Overview on the National Implementation of the Chemical Weapons Convention. |
22 MAR 1998 |
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| Authors:
RONALD SUTHERLAND; Thomas Kurzidem; THOMAS STOCK; SASKATCHEWAN UNIV SASKATOON DEPT OF CHEMISTRY AND CHEMICAL ENGINEERING
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| The Chemical Weapons Convention (CWC) has entered into force 29 April 1997. As of February 1998, 107 countries have ratified the treaty, among them the USA and since November last year, Russia too. There is no doubt, the participation by the Russian Federation and the United States in the CWC is more than an essential step for it's primary goals: the total elimination of chemical weapons. Looking back into the ... |
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| German Approach to the Dismantling of Old Chemical Weapons (OCW) in Munster. |
22 MAR 1998 |
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| Authors:
Wittkopp Klaus-Rainer
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| As a belligerant nation of World War I and II Germany is afflicted with the heritage of Old Chemical Weapons (OCW) which can be dated from 1915 up to 1945. OCW are still being found throughout in Germany, particularly in the ground of former production sites, filling stations, testing areas and storage facilities. A large amount of OCW was dumped in the sea, for instance in the Baltic Sea. Due ... |
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| The Tooele Chemical Demilitarization Facility - Destroying More than 40 Percent of the US Chemical Weapons Stockpile. |
22 MAR 1998 |
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| Authors:
William H. Parker; EG AND G INC WELLESLEY MA
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| Chemical weapons have been in existence since World War I. In 1985, the United States signed the Geneva Protocol, as a first step toward banning the use of chemical weapons, except for use in retaliation to chemical attack. In 1985, PL 99-145 was enacted. This law directed the Department of Defense (DoD) to destroy our stockpile of unitary weapons. These weapons, some stored for over 40 years, contain premixed, live ... |
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