| SM and ND Substiturions in YBCO Films Produced through Metal Organic Deposition (Postprint) |
Feb 2012 |
8 pages |
| Authors:
B C Harrison; J Carpenter; and P N Barnes P Klenk; H Fang; C V Varanasi; AIR FORCE RESEARCH LAB WRIGHT-PATTERSON AFB OH PROPULSION DIRECTORATE
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 | Epitaxial YBa2Cu3O7-x (YBCO) films were produced on non-buffered (100) single crystal LaAlO3 using the metal organic deposition (MOD) method with fluorinated metal acetates. In an effort to enhance the in-field performance of the films, Sm and Nd acetates were fractionally substituted for Y acetate in a series of precursor solutions to incorporate an array of nanoscale flux pinning centers in the post-annealed films. From measurements taken in the non-optimized films ... |
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| Silicon-Containing Polymers and Composites |
29 Nov 2011 |
4 pages |
| Authors:
Joseph M Mabry; Brian M Moore; Raymond Campos; Vandana Vij; Gregory R Yandek; Timothy S Haddad; Sean M Ramirez; Andrew J Guenthner; Dana M Pinson; AIR FORCE RESEARCH LAB EDWARDS AFB CA PROPULSION DIRECTORATE SPACE AND MISSILE PROPULSION DIV/PROPULSION MATERIALS APPLICATIONS BRANCH
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| There are many examples of improved oxidation-resistance in organic polymeric materials achieved through the incorporation of silicon-containing compounds. These compounds are often organically-modified particles, such as silicas, silicates, clays, or polyhedral oligomeric silsesquioxanes, which can be mechanically blended into a wide variety of polymer matrices. However, in order to achieve improved dispersion of the silicon phase, it is often desirable for the silicon-containing compound to be covalently bound to the ... |
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| Giga-Hertz Electromagnetic Wave Science and Devices for Advanced Battlefield Communications |
15 Dec 2010 |
7 pages |
| Authors:
Z Celinski; COLORADO UNIV AT COLORADO SPRINGS
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| Our work concentrated on on-wafer delay lines based on liquid crystals. These non-dispersive devices were tested in the range of 1- 110 GHz and exhibit phase change on the order of 300 deg./cm. We have designed also series of other tunable devices based on liquid crystals such as band pass and notch filters and patch antennas operating at 60 and 85 GHZ. The nonlinear effects of two wave mixing were ... |
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| Organic/Organometallic Hybrids as Broadband Nonlinear Transmission Materials |
JUN 2010 |
33 pages |
| Authors:
Wenfang Sun; NORTH DAKOTA STATE UNIV FARGO
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| The ultimate goal of this project is to understand the structure-property correlation in organometallic complexes in order to develop broadband nonlinear transmission materials. To realize this goal, we have synthesized and performed systematic photophysical study and nonlinear optical characterization of 87 square-planar platinum terdentate/bidentate complexes, 5 texaphyrin derivatives, and 6 stilbazolium derivatives. In addition, we investigated the photophysics and nonlinear absorption of 10 other platinum complexes and 10 zinc phthalocyanine ... |
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| Multispectroscopic (FTIR, XPS, and TOFMS-TPD) Investigation of the Core-Shell Bonding in Sonochemically-Prepared Aluminum Nanoparticles Capped with Oleic Acid (Preprint) |
APR 2010 |
19 pages |
| Authors:
Andrew T. Rosenberger; Donald K. Phelps; Jonathon E. Spowart; Christopher E. Bunker; William K. Lewis; Christopher A. Crouse; Barbara A. Harruff; K. A. Fernando; Marcus J. Smith; Elena A. Guliants; AIR FORCE RESEARCH LAB WRIGHT-PATTERSON AFB OH PROPULSION DIRECTORATE
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| Organically-capped metal nanoparticles are an attractive alternative to more conventional oxide-passivated materials, due to the lower reaction temperatures and the possibility of tuning the organic coating. Sonochemical methods have been used to produce air-stable aluminum nanoparticles capped with oleic acid. In order to understand the nature of the metal-organic bonding in this system, we have used FTIR, XPS, and TOFMS-TPD techniques to study the organic passivation layer and its desorption ... |
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| AlInN HEMT Grown on SiC by Metalorganic Vapor Phase Epitaxy for Millimeter-Wave Applications |
Oct 2009 |
6 pages |
| Authors:
Shiping Guo; Xiang Gao; Daniel Gorka; Jinwoork W Chung; Han Wang; Tomas Palacios; Antonio Crespo; James K Gillespie; Kelson Chabak; Manuel Trejo; IQE RF LLC SOMERSET NJ
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| In this work we present the epitaxial and device results of AlInN/GaN HEMTs grown on SiC by metalorganic vapor phase epitaxy. High quality AlInN/GaN HEMT structures with sub-10 nm AlInN barrier were grown with very low Ga background level (1%). The low Rsh of 215V/sq was obtained with an excellent standard deviation of 1.1% across 300 wafers. Lehighton RT contactless Hall tests show a high mobility of 1617 cm2/V s ... |
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| Combination Sorbent and Reactive Chemistries for Use in Highly Efficient Aerobic Oxidations (W911NF0510081) |
14-Jul-2009 |
12 pages |
| Authors:
Michel R Gagne; NORTH CAROLINA UNIV AT CHAPEL HILL
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| The purpose of this work was to investigate the possibility of utilizing metalloporphyrins as the catalysts for aerobic oxidation of alcohols, We proposed to investigate the catalytic activity of the metalloporphyrins in solution and in a polymer-supported form. The porous polymer was anticipated to concentrate substrates, especially in the inflammable fluorinated solvents. Since oxygen solubility in fluorinated solvent is several times higher than in nonfluorous organic solvents, such systems were ... |
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| Impregnated Metal-Organic Frameworks for the Removal of Toxic Industrial Chemicals |
Nov-2008 |
33 pages |
| Authors:
EDGEWOOD CHEMICAL BIOLOGICAL CENTER ABERDEEN PROVING GROUND MD RESEARCH AND TECHNOLOGY DIR
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| Current technology-based efforts are focusing on a nanotechnology approach to sorbent development for air purification applications. Metal-organic frameworks (MOFs) are a novel class of materials that allow for specific functionalities to be designed directly into a porous framework. This report summarizes the evaluation of MOFs impregnated with various chemicals for enhanced reactivity. Specifically, MOF-5 (IRMOF-l) was impregnated with citric acid, copper acetate, copper oxide, and triethylenediamine (TEDA) and evaluated for ... |
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| Diagnostic and Therapeutic Radiopharmaceutical Agents for Selective Discrimination of Prostate Cancer |
Oct-2008 |
30 pages |
| Authors:
Paul Benny; WASHINGTON STATE UNIV PULLMAN
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| The project investigated the development of ligand linked Flutamide analogs for complexing a M(CO)3 (Re,99mTc) organometallic species to target prostate cancer for imaging and therapy. The project has been successful in developing and testing new synthetic strategies for this application. General methods were established for preparing the complexes in excellent yields(95%) at (10-4,10-5 M) ligand concentration, testing the stability of the complexes (pH, temperature) and in vitro (serum, AR +/- ... |
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| Dual Mechanism Nonlinear Response of Selected Metal Organic Chromophores |
01 OCT 2007 |
146 pages |
| Authors:
John D. Peak; FLORIDA UNIV GAINESVILLE
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| 13 The goal for the research described herein is the development of a series of transition metal based metal organic chromophores that display both two-photon and excited state absorption (TPA/ESA) character. With this goal in mind, we present the preparation and photophysical characterization for a series of metal-organic chromophores containing a two photon absorbing bipyridine core combined with a transition metal component which yields a long-lived triplet excited state. The ... |
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| High Temperature Resistant Organic/Inorganic Hybrid Polymers: An Architectural Study |
18 APR 2007 |
16 pages |
| Authors:
Stuart Rowan; Christoph Weder; CASE WESTERN RESERVE UNIV CLEVELAND OH DEPT OF MACROMOLECULAR SCIENCE
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| This project addressed the development of a new class of metal/organic supramolecular polymers, which are prepared by the self-assembly of ditopic ligands and appropriate metal ions. The ditopic ligand consists of two 2,6-bis(1'-methyl-benzimidazolyl)pyridine ligands, which are connected to each other by either a conjugated poly(p-phenylene ethynylene) (PPE) core or a poly(p-xylyene) (PPX) core. The metal/organic supramolecular polymers based on ditopic poly(p-xylyene) macromonomers were investigated as easy-to-process high-temperature-resistant materials. We demonstrated ... |
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| Magnetic and Optical Properties of MN Doped GaN |
NOV 2006 |
5 pages |
| Authors:
F. E. Arkun; N. A. El-Masry; M. J. Reed; John Muth; Xiyao Zhang; Amr Mahrouse; S. M. Bedair; J. M. Zavada; NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS SCIENCE AND ENGINEERING
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| Mn:doped GaN films, a dilute magnetic semiconductor material, are grown on (0001) sapphire substrates by metal organic vapor deposition. Optical properties are investigated by transmission measurements and two absorption bands are found to be dominating the transmission spectra. The first absorption band was at Ev+1.5 eV and was attributed to the formation of a Mn related deep level energy band above the valence band of GaN. The second band extended ... |
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| Infrared Probes of Metal Cluster Structure and Bonding |
MAR 2006 |
16 pages |
| Authors:
Michael A. Duncan; GEORGIA UNIV RESEARCH FOUNDATION INC ATHENS
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| Molecular beam experiments employing laser vaporization, time-of-flight mass spectrometry and laser photodissociation were employed to study a variety of metal compounds nanoclusters to evaluate their potential for new materials. Mixed atomic clusters of copper, silver and gold with carbon or silicon were studied as well as several transition metal oxide clusters. New laser techniques were developed and employed to make metal and metal oxide complexes with polycyclic aromatic hydrocarbon species. ... |
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| A Method to Determine British Anti-Lewisite in Plasma Utilizing Gas Chromatography/Mass Spectrometry |
01 OCT 2005 |
7 pages |
| Authors:
Christopher E. Byers; Evan R. Holloway; William D. Korte; John R. Smith; Bebedict R. Capacio; ARMY MEDICAL RESEARCH INST OF CHEMICAL DEFENSE ABERDEEN PROVING GROUND MD
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| British anti-Lewisite (BAL) (2,3-dimercapto-1-propanol) is a potential therapeutic compound against the effects of cutaneous sulfur mustard, and an method for its determination in plasma has been developed. BAL and the internal standard (IS) ethane dithiol were removed from plasma samples through solid phase extraction, then reacted with 1-pentafluoropropionylimidazole (PFPI), forming stable pentafluoropropionyl derivates that are sensitive to gas chromatography/mass spectroscopy (GC/MS) analysis. Examining concentrations versus peak area ratios of BAL ... |
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| Magnetic and Optical Properties of MN-Doped GaN Thin Films and P-I-N devices |
DEC 2004 |
9 pages |
| Authors:
M. L. Reed; M. O. Luen; S. M. Bedair; M. J. Reed; F. E. Arkun; E. A. Berkman; N. A. El-Masry; J. M. Zavada; NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
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| In this paper, we report on the growth and characterization of single crystal GaMnN thin films and p-i-n junction devices grown by metal-organic chemical vapor deposition (MOCVD). Single crystal GaMnN films were achieved by optimizing the growth temperature, growth rate and the Mn:Ga gas phase ratio. A growth window for obtaining single crystal Ga(sub 1-x)Mn(sub x)N with 0. 006= |
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| High Throughput Synthesis of Terahertz Quantum Cascade Lasers |
21 OCT 2004 |
23 pages |
| Authors:
Kurt J. Linden; SPIRE CORP BEDFORD MA
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| This Phase I STTR program (Topic #AF03T024) was aimed at the design and synthesis of an AlGaAs/ GaAs-based epitaxial layer structure for terahertz quantum cascade lasers (THz QC lasers) that can be grown by metalorganic chemical vapor deposition (MOCVD). The program succeeded in growing two different THz QC laser structures by MOCVD. The wafer growths of these 10 micron thick epitaxial structures by MOCVD required 5 hours of growth time, ... |
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| Acquisition of a Growth System to Enable Revolutionary Nanowire-Based Nanophotonics |
DEC 2003 |
5 pages |
| Authors:
Charles M. Lieber; PRESIDENT AND FELLOWS OF HARVARD COLL CAMBRIDGE MA OFFICE OF SPONSORED RESEARCH
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| A state-of-the-art, metal-organic chemical vapor deposition (MOCVD) system was acquired and successfully installed. The instrumentation is capable of growth of group-III nitride alloys with control down to the atomic level. The new system has been used to grow novel gallium nitride nanowires, including gallium nitride/indium-gallium nitride/p-type gallium nitride core/shell/shell heterostructures. Structural measurements demonstrate the successful growth of these new nanomaterials, and moreover, physical measurements demonstrate that these new nanowire heterostructures ... |
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| Investigation of the Cubic Non-Linearity of New Organometallic Cyano- Containing Polymers by Z-Scan and Two Beam Coupling With Spectral Resolving |
15 OCT 2003 |
20 pages |
| Authors:
William Douglas; MONTPELLIER-2 UNIV (FRANCE) LABORATORIE CHIMIE MOLECULAIRE ET ORGANISATION DU SOLIDE
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| This report results from a contract tasking Universite de Montpellier II as follows: The contractor will investigate the nonlinear optical properties of organic and organo-metallic polymers and hybrid organic-inorganic composites. These materials exhibit strong nonlinear properties with fast (femtosecond) response times. These materials are potentially useful for optical switching of telecommunications devices, phase conjugation, optical limiters, and optical multiplexing. Advances in these subjects can significantly improve performance of Air Force ... |
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| A New Ferroelectric Varactor from Water Based Inorganic Precursors |
03 APR 2003 |
6 pages |
| Authors:
T. K. Dougherty; John Drab; Miek Brand; Kathleen Kehle; RAYTHEON INFRARED OPERATIONS GOLETA CA
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| Solution deposition processes for the production of thin multi-element metal oxide films continue with great interest and varied success. Solution deposition via either sol-gel or MOD (Metal Organic Decomposition) methods are of interest due to the ability to produce a wide variety of compositional products at low capital investment cost. The sol-gel method generally uses hydrolytically sensitive metal alkoxides as the starting materials. Manipulation of the reagents and different hydrolysis ... |
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| Correlation of Microwave Dielectric Properties and Microstructure of Unpatterned Ferroelectric Thin Films |
03 APR 2003 |
6 pages |
| Authors:
R. G. Geyer; M. W. Cole; P. C. Joshi; E. Ngo; C. Hubbard; ARMY RESEARCH LAB ABERDEEN PROVING GROUND MD WEAPONS AND MATERIALS RESEARCH DIRECTORATE
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| The influence of low concentration (1 mol%) Mg doping on the structural, microstructural, surface morphological and dielectric properties of Ba(1-x)Sr(x)TiO3 thin films has been measured and analyzed. The films were fabricated on MgO and Pt-Si substrates via the metalorganic solution deposition technique using carboxylate-alkoxide precursors and post deposition annealed at 800 deg C (film/MgO substrates) and 750 deg C (film/Pt-Si substrates). The structure, microstructure, surface morphology and film/substrate compositional quality ... |
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| Dielectric and Room Temperature Tunable Properties of Mg-Doped Ba(0.96)Ca(0.04)Ti(0.84)Zr(0.16)O(3) Thin Films on Pt/MgO |
03 APR 2003 |
6 pages |
| Authors:
T. S. Kalkur; Woo-Chul Yi; Elliott Philofsky; Lee Kammerdiner; COLORADO UNIV AT COLORADO SPRINGS DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
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| Mg-doped Ba(0.96)Ca(0.04)Ti(0.84)Zr(0.16)O3 (BCTZ) thin films were fabricated on Pt/MgO substrate by metallorganic decomposition method. The structure of the films were analyzed by x-ray diffraction. The electrical measurements were performed on metal-ferroelectric-metal capacitors with platinum as the top and bottom electrode. The dielectric properties were improved after the capacitors were post annealed at 700 deg C in oxygen atmosphere for 30 min. A high dielectric constant of 504 and a dissipation ... |
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| Molecular Fabrication of Nanoscale Composites |
FEB 2003 |
21 pages |
| Authors:
Nicholas Winograd; PENNSYLVANIA STATE UNIV UNIVERSITY PARK DEPT OF CHEMISTRY
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| The central aim of our work was to gain a fundamental understanding of the interaction of metal atoms with organic monolayers. This information is crucial to the burgeoning fields of molecular and organic electronics so that- low power electronic devices can easily be designed. These systems are relevant not only for molecular/organic electronics but also in organometallic and polymer chemistry. |
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| Optically Detected Magnetic Resonance of (Effective-Mass) Shallow Acceptors in Si-Doped GaN Homoepitaxial Layers |
01-Jan-2003 |
7 pages |
| Authors:
E R Glaser; Freitas; J A Jr; B V Shanabrook; D D Koleske; S K Lee; S S Park; J Y Han; NAVAL RESEARCH LAB WASHINGTON DC
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| Optically detected magnetic resonance (ODMR) has been performed on Si-doped GaN homoepitaxial layers grown by organometallic chemical vapor deposition on free-standing GaN templates. In addition to intense excitonic bandedge emission with narrow linewidths (<0.4 meV), these films exhibit strong shallow donor shallow acceptor recombination at 3.27 eV. Most notably, ODMR on this photoluminescence band reveals a highly anisotropic resonance with g|-2.193 +/-0.001 and g|~0 as expected for effective-mass shallow acceptors ... |
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| Defect Reduction in GlGaN/GaN Ultra-Violet Photodetectors |
03 OCT 2002 |
53 pages |
| Authors:
Hadis Morkoc; VIRGINIA COMMONWEALTH UNIV RICHMOND SCHOOL OF ENGINEERING
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| Since the native substrates are not easily available in sufficient size and quantity, alternative methods by using various types of buffer layers to isolate the films from the deleterious effect of the substrate have been investigated. In the case of MOCVD, a thin GaN or AlN film grown at low temperature (^500 o C) is commonly used as the buffer layer for the active layer growth at much higher temperatures. ... |
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| Solvothermal Molecular Precursor Routes to Semiconductor Film and Crystal Growth |
AUG 2002 |
7 pages |
| Authors:
Edward G. Gillan; IOWA UNIV IOWA CITY DEPT OF CHEMISTRY
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| This research project explored the utility of molecular precursor decomposition in superheated non-aqueous solvents directed towards semiconductor crystal growth. Reactions were run in toluene, THF, and under solvent free conditions. An in situ precursor synthesis and decomposition resulted in GaN nanoparticles from simple starting materials (GaCl(3) and NaN(3)). Particle sizes range from about 10 to hundreds of nanometers. Upon annealing to 1000 degrees C, the poorly crystalline products ordered into ... |
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| Development of High-Sensitivity Nitride Solar-Blind Detectors and Detector Arrays Using Low-Dislocation-Density Nitride Surfaces |
MAR 2002 |
62 pages |
| Authors:
J. F. Schetzina; NORTH CAROLINA STATE UNIV AT RALEIGH
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| This work explored the application of III-V nitride semiconductors for optical detectors in the ultraviolet (UV) region of the electromagnetic spectrum. Metalorganic vapor phase epitaxy was used to synthesize thin film p-i- n photodiode structures on double side polished sapphire substrates. These structures were fabricated into photodiode devices using generally accepted techniques for dry etching and p and n-contact metallizations. Test devices were characterized which demonstrated quantum efficiencies as high ... |
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| International Symposium on Self-Propagating High-Temperature Synthesis (SHS-2001) (6th) Held at Technion, Haifa, Israel on February 17-21, 2002. Book of Abstracts |
21 FEB 2002 |
117 pages |
| Authors:
TECHNION - ISRAEL INST OF TECH HAIFA DEPT OF MATERIALS ENGINEERING
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| Partial contents: Nanocrystalline Ceramics by Solid State Thermolysis of Metalorganic Polymers; Trends in Ceramic Materials Development into the Third Millennium; SHS of Dense in situ Composites via Pressure Assisted Thermal Explosion: experiment and modeling; Forewood; Contaminants, Additives and Dopants in Modern Materials Science; Inorganic Nanotubes and Inorganic Fullerane-like Materials from Layered Compounds: synthesis, properties and applications; Kinetics and Thermodynamics of SHS Reactions; Mechanical Alloying in the SHS Research; SHS in ... |
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| Magnetic Resonance Studies of Mg-Doped GaN Epitaxial Layers Grown by Organometallic Chemical Vapor Deposition |
05 FEB 2002 |
11 pages |
| Authors:
E. R. Glaser; W. E. Carlos; G. C. Braga; Jr. Freitas J. A.; W. J. Moore; B. V. Shanabrook; R. L. Henry; A. E. Wickenden; D. D. Koleske; H. Obloh; NAVAL RESEARCH LAB WASHINGTON DC
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| Electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) experiments have been performed on a set of GaN epitaxial layers doped with Mg from 2.5 *10(exp 18) to 5.0 *10(exp 19) /cu cm. The samples were also characterized by secondary-ion-mass spectroscopy (SIMS), temperature-dependent Hall effect, and low-temperature photoluminescence (PL) measurements. EPR at 9 GHz on the conductive films reveals a single line with g||~2.1 and g|~2 and is assigned ... |
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| The Role of Nitrogen-Induced Localization and Defects in InGaAsN (2% N): Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition |
JAN 2002 |
8 pages |
| Authors:
Steven R. Kurtz; A. A. Allerman; J. F. Klem; R. M. Sieg; C. H. Seager; SANDIA NATIONAL LABS ALBUQUERQUE NM
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| Nitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths are examined for InGaAsN (approx. 1.1 eV bandgap) grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). Independent of growth technique, annealing promotes the formation of In-N bonding, and lateral carrier transport is limited by large scale (>> mean free path) material inhomogeneities. Comparing solar cell quantum efficiencies for devices grown by MBE and MOCVD, we ... |
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| New Approach Towards the Deposition of I-III-VI Thin Films |
JAN 2002 |
6 pages |
| Authors:
Mohammad Afzaal; David Crouch; Paul O'Brien; Jin-Ho Park; MANCHESTER UNIV (UNITED KINGDOM)
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| The ternary chalcopyrite semiconductor Cu(In/Ga)(Se/S)2 is currently used as an absorber layer in high efficiency thin film solar cells. In this study, various types of I-III-VI (I = Cu, III = Ga or In, VI = S or Se) thin films (CuGaS2, CuInS2 and CuInSe2) were prepared from a series of organometallic precursors, M(S/Se)2CNMeRn (M = Cu, In, Ga; R = alkyl) by aerosol-assisted chemical vapour deposition (AACVD). In contrast ... |
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| Strategies for Direct Monolithic Integration of AlxGa(1-x)As/InxGa(1-x)As LEDS and Lasers On Ge/GeSi/Si Substrates Via Relaxed Graded GexSi(1-x) Buffer Layers |
JAN 2002 |
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| Authors:
Michael E. Groenert; Christopher W. Leitz; Arthur J. Pitera; Vicky K. Yang; Harry Lee; MASSACHUSETTS INST OF TECH CAMBRIDGE
|
 | Al(x)Ga(1-x)As/GaAs quantum well lasers have been demonstrated via organometallic chemical vapor deposition (OMCVD) on relaxed graded Ge/Ge(x)Si(1-x) virtual substrates on Si. Despite Un-optimized laser structures with high series resistance and large threshold current densities, surface threading dislocation densities as low as 2 x 10(exp 6)/sq cm enabled cw room-temperature lasing at a wavelength of 858 nm. The laser structures are oxide-stripe gain-guided devices with differential quantum efficiencies of 0.16 and ... |
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| Growth of High Nitrogen Content GaAsN by Metalorganic Chemical Vapor Deposition |
JAN 2002 |
6 pages |
| Authors:
J. C. Roberts; B. F. Moody; P. Barletta; M. B. Aumer; S. F. LeBoeuf; NORTH CAROLINA STATE UNIV AT RALEIGH
|
| The incorporation of a high percentage of nitrogen in the GaAs lattice has been the subject of recent interest to reduce the bandgap while maintaining the nearly lattice matched condition to GaAs. We will report on the metalorganic chemical vapor deposition (MOCVD) of GaAsN using trimethylgallium (TMG), tertiarybutylarsine (TBA) and dimethylhydrazine (DMHy) organometallic sources in a hydrogen-free carrier gas. A nitrogen concentration as high as 8% in GaAsN was achieved. ... |
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| A1GaN/GaN HEMTs Grown by Molecular Beam Epitaxy on Sapphire, SiC, and HVPE GaN Templates |
2002 |
8 pages |
| Authors:
Nils G. Weimann; M. J. Manfra; J. W. Hsu; K. Baldwin; L. N. Pfeiffer; AGERE SYSTEMS MURRAY HILL NJ
|
| Molecular Beam Epitaxy of GaN and related alloys is becoming a rival to the more established Metalorganic Vapor Phase Epitaxy. Excellent control of impurity, interface abruptness, and in- situ monitoring of the growth are driving the increase in quality of MBE epilayers. We have developed nucleation schemes with plasma-assisted MBE on three types of substrates, consisting of sapphire, semi-insulating (SI-) SiC, and HVPE SI-GaN templates on sapphire. While sapphire and ... |
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| Nontoxic, Self-Cleaning Silicone Fouling Release Coatings |
31 OCT 2001 |
352 pages |
| Authors:
Judith Stein; Christina D. Wood; Kathryn Truby; Owen Harblin; James Resue; GE CORPORATE RESEARCH AND DEVELOPMENT SCHENECTADY NY
|
| Biofouling on ship hulls presents a significant challenge for the U. S. Navy. Fouling on the hulls of marine vessels has been shown to reduce maximum speed and increase propulsive fuel consumption1. Historically, marine antifouling paints have utilized compounds toxic to marine organisms, such as triorganotin, as a means of combating the fouling problem2. In recent years, the environmental impact of these coatings has come under scrutiny3,4. The application of ... |
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| Electronic Structure Methods for the Design of Alloy Chemistry |
SEP 2001 |
16 pages |
| Authors:
Mark Eberhart; COLORADO SCHOOL OF MINES GOLDEN DEPT OF CHEMISTRY- GEOCHEMISTRY
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| Computational materials science is a comparatively new discipline that may forever alter the way in which materials are made and improved. This discipline seeks to use modeling and simulation to predict the properties of materials that have yet to be made. it is hoped that the ever-increasing power of computation can be harnessed to aid the materials designer and thereby accelerate the pace and reduce the cost of materials development. ... |
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| Surface Segregation in Epitaxy of III-V Compounds |
JUN 2001 |
4 pages |
| Authors:
S. Yu. Karpov; Yu. N. Marakov; SOFT-IMPACT LTD SAINT PETERSBURG (RUSSIA)
|
| Surface segregation in III-V compound heterostrucures grown by Molecular Beam Epitaxy (MBE) and Metal-Organic Vapor Phase Epitaxy (MOVPE) is studied theorencally. The suggested model treats segregation as a transient process resulting in a delayed highly-volatile species incorporation into the crystal accompanied by its accumulation on the growth surface. Specific features of In segregation in InGaAs and InGaN are discussed with respect to control of the composition profile and efficiency of ... |
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| Modified Ba(1-x)Sr(x)TiO3 Thin Films for Tunable Device Applications |
JUN 2001 |
29 pages |
| Authors:
M. W. Cole; P. C. Joshi; C. W. Hubbard; E. Ngo; M. H. Ervin; ARMY RESEARCH LAB ABERDEEN PROVING GROUND MD WEAPONS AND MATERIALS RESEARCH DIRECTORATE
|
| Pure and La doped Ba(0.6)Sr(0.4)TiO3 (BST) thin films were fabricated via the metalorganic solution deposition technique using carboxylate-alkoxide precursors on Pt-Si substrates. The La doping concentration, from 0-10 mole- percent, was found to have a strong influence on the 750 deg C post deposition annealed films material properties. All films possessed a nontextured polycrystalline microstructure with no evidence of secondary phase formation. The pure and 1 mole-percent La doped films ... |
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| Artificial Metallo-Phosphoesterase |
25 MAY 2001 |
8 pages |
| Authors:
Jik Chin; MCGILL UNIV MONTREAL (QUEBEC) DEPT OF CHEMISTRY
|
| Our first two US Army contracts (July 1, 90 to June 30, 93 & Mar 15, 94 to Mar 14 97) involved the study of mono and dinuclear metal complexes for hydrolyzing phosphate esters. We have now completed our third US Army contract. Due to my recent move from McGill University to University of Toronto (July 1, 00), the funding period for the third contract was reduced from three to ... |
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| Effects of Crystallographic Orientation and Strain on Quantum Confined Structures and Devices |
15 APR 2001 |
148 pages |
| Authors:
Arthur L. Smirl; IOWA UNIV IOWA CITY
|
| The majority of the heterostructures grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) over the last thirty years have been grown on substrates oriented in the 001 crystallographic direction. By comparison, there has been very little work on growth on other crystallographic axes or on applications of such structures. However, theoretical considerations (and several recent experiments) would indicate that unique and useful properties can be realized ... |
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| Epitaxial Growth of Dilute Magnetic Semiconductors: GaMnN and GaMnP |
APR 2001 |
6 pages |
| Authors:
Mark E. Overberg; Cammy R. Abernathy; Stephen J. Pearton; Fred Sharifi; Arthur F. Hebard; FLORIDA UNIV GAINESVILLE
|
| Epitaxial growth of the dilute magnetic semiconductors GaMnP and GaMnN has been investigated by Gas Source Molecular Beam Epitaxy (GSMBE). GaMnP films grown with < 4.5% Mn show the preferential formation of the second phases MnP and Mn(5.64)P3, resulting in only a slight deviation from purely diamagnetic behavior. GaMnN films grown on both Al2O3 and Metal-Organic Chemical Vapor Deposition (MOCVD) derived GaN surfaces show strong ferromagnetism when grown with either ... |
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| Instrumentation for Integrated Photonic Device Research |
APR 2001 |
3 pages |
| Authors:
Bruce Wessels; NORTHWESTERN UNIV EVANSTON IL
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| The system is currently operational and has been used in support of the AFOSR MURI program on Integrated Devices for Terabit per Second Network Applications, under award no. F49620-0262/005 monitored by AFOSR. |
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| Epitaxial Lateral Overgrowth of II-VI Semiconductors |
28 FEB 2001 |
19 pages |
| Authors:
Ishwara B. Bhat; RENSSELAER POLYTECHNIC INST TROY NY DEPT OF ELECTRICAL COMPUTER AND SYSTEMS ENGINEERING
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| Epitaxial lateral overgrowth of CdTe was carried out on Si and GaAs substrates. Perfectly selective epitaxial growth was demonstrated on CdTe/Si and GaAs substrates using Si3N4 as the mask material. Selective growth has been possible at T>5OO deg C and pressure 3 has been achieved. Reduction in defect density in films has been demonstrated. |
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| Thin Film CdZnTe Detector Arrays for Digital Mammography |
JAN 2001 |
65 pages |
| Authors:
Nader M. Kalkhoran; SPIRE CORP BEDFORD MA
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| The objective of this program was to develop large-area, flat-panel detectors for digital mammography using CdTe or CdZnTe deposited by metalorganic chemical vapor deposition (MOCVD) directly on thin-film transistor (TFT) active matrix arrays for image readout. CdTe and CdZnTe have the potential to meet the requirements for digital mammography due to their high x-ray absorption, large bandgap and good carrier transport. After four years of intensive work, we were able ... |
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| New Metal Organic Nonlinear Optical Complexes |
15 DEC 2000 |
5 pages |
| Authors:
Chris M. Lawson; Gary M. Gray; ALABAMA UNIV IN BIRMINGHAM
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| The goal of the research in this grant is to optimize metal-organic complexes for nonlinear optical (NLO) applications, by determining how variations in the metal centers and types of ligands will affect the NLO properties of the complexes. We studied a number of Pd (II) and Pt(II) complexes of phosphine ligand, and we found that these complexes exhibit both NLO refraction and NLO absorption that depends both on the nature ... |
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| The National Shipbuilding Research Program. Development of a Quick TBT Analytical Method |
16 AUG 2000 |
41 pages |
| Authors:
CENTER FOR ADVANCED SHIP REPAIR AND MAINTENANCE INC NORFOLK VA
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| Concern about the toxic effect of tributyltin have caused the Commonwealth of Virginia through the Department of Environmental Quality to promulgate a Virginia Pollutant Discharge Elimination System (VPDES) discharge standard of 50 parts per trillion (pptr or ng/L). In addition to this action, an international ban on the use of TBT paints is scheduled for 2008. These actions as well as the interest by some shipyards in ISO 14001 certification ... |
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| BST Capacitors for Cryogenic Focal Plane Arrays |
30 JUN 2000 |
57 pages |
| Authors:
Frank DiMeo; ADVANCED TECHNOLOGY MATERIALS INC DANBURY CT
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| The purpose of this project was to enhance the performance of Infrared Focal Plane Array (IRFPA) detectors through the replacement of SiO2 in the integrating capacitor of each array pixel by a material with a higher dielectric constant. The increase in storage capacity that results from this replacement enables the following: design of more complex circuits in each cell; use of longer integration times with increased sensor standoff range; design ... |
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| Structure and Dynamics in Metal-Containing Clusters |
23 JUN 2000 |
18 pages |
| Authors:
Michael A. Duncan; GEORGIA UNIV RESEARCH FOUNDATION INC ATHENS
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| Gas phase clusters were produced composed of a metal ion bound to one or more molecular "ligands" (e.g., water, nitrogen, acetylene, methanol, etc.). These gas phase complexes were studied with mass-selected laser photodissociation spectroscopy and laser photoelectron spectroscopy (ZEKE) . These studies determine the structures and energetics of these clusters and they probe the dynamics of nascent solvation processes. Other metal clusters and metal-organic complexes ... |
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| Properties of Wide Mesastripe InGaAsP Heterolasers |
23 JUN 2000 |
4 pages |
| Authors:
E. G. Golikova; V. A. Kureshov; A. Yu. Leshko; A. V. Lyutetskiy; N. A. Pikhtin; RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
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| InGaAsP/InP wide mesastripe laser diodes (lambda = 1.3-1.55 microns) grown by metal-organic chemical vaponr deposition (MOCVD) method have been fabricated. Light-current characteristics and emitting spectra under pulse and continuous-wave (CW) operation have been investigated in 10 - 60 C temperature range. Laser diode active region overheating of 30 - 60 K in respect to the copper heatsink at maximum CW drive currents has been determined. Strong influence of the external ... |
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| Photoelectronic Properties of InAs/GaAs Nanostructures With Combined Quantum Well and Quantum Dot Layers Grown by Metal-Organic Vapor Phase Epitaxy |
23 JUN 2000 |
3 pages |
| Authors:
I. A. Karpovich; B. N. Zvonkov; D. O. Filatov; S. B. Levichev; N. V. Baidus; UNIVERSITY OF NIZHNI NOVGOROD (RUSSIA)
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| Combination of quantum well (QW) and QD layers in the GaAs/In(x) GA(-x)AS nanostructures obtained by MOVPE result not only in well known "red shift" of the QD PL spectrum but also to splitting of the PL spectrum and of the photosensitivity spectrum of the QW. "Red shift" of one of these spectral features relative to the other is explained by diffusion of In from the QDs to the QW at ... |
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| Formation of Defect-Free InGaAs-GaAs Quantum Dots for 1.3 Micrometers Spectral Range Grown by Metal-Organic Chemical Vapor Deposition |
23 JUN 2000 |
4 pages |
| Authors:
I. L. Krestnikov; N. N. Ledentsov; M. V. Maximov; D. A. Bedarev; I. V. Kochnev; RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
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| TThis document investigated structural and optical properties of MOCVD-grown single and stacked InGaAs insertions formed with and without annealing step after thin layer overgrowth. We found that this ovrergrowth/annealing procedure results in elimination of dislocated InGaAs clusters, thus, only the structures grown with such an approach are suitable for long-wavelength laser applications for the growth mode chosen in this work. Additionally. according to our results, growth of stacked long-wavelength QDs ... |
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