| Searching for Better Photorefractive Materials |
13 JUL 2005 |
48 pages |
| Authors:
|
 | This report summarizes the research effort for the grant period as indicated above on search for better photorefractive materials. New synthetic approaches and new materials with much improved photorefractive properties have been developed. Detailed discussion and description are described in this report. It was also reported the development of conjugated diblock co-oligomers for rectifying effect, which is the fundamental requirement for photovoltaic applications. |
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| Millimeter-Wave Quasi-Optical MEMS Steered MMIC Amplifier Array |
10 DEC 2000 |
27 pages |
| Authors:
Hercules P. Neves; Warren Wright; CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING
|
| The development of a 44 GHz MEMS-steered solid-state amplifier array with 100 active elements has been studied. The array has a layered geometry with 10 layers of microstrip circuitry, each containing 10 amplifier/MEMS phase shifter elements configured in parallel as a power combining microstrip/parallel plate waveguide combiner. The final strategy for the grating array and layer array amplifiers was implemented and tested. This involved the construction of a compact array ... |
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| Silicon Optical Data Link |
MAR 97 |
95 pages |
| Authors:
Lionel C. Kimerling; MASSACHUSETTS INST OF TECH CAMBRIDGE CENTER FOR MATERIALS SCIENCE AND ENGINEE RING
|
| This Silicon Optical Data Link Program was initiated as a three year effort to develop an monolithically integrated data link using standard silicon fabrication technology. The objectives were to create efficient emitter, waveguide and detector components, integrate the process sequence and demonstrate functionality. The program was prematurely terminated by AFOSR with approximately 50% of the anticipated support awarded. The results enabled by this grant, however, were quite significant. A process ... |
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| Development of Technology for Microwave Arrays |
22 JAN 97 |
63 pages |
| Authors:
DCS CORP ALEXANDRIA VA
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| Grid Amplifiers |
04 JUL 95 |
12 pages |
| Authors:
David Rutledge; CALIFORNIA INST OF TECH PASADENA
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| Quasioptical power combining allows the combining of a large number of devices in free space without the usual transmission line combiner losses. It is a particularly attractive idea at millimeter wavelengths, where the devices can be made as a monolithic integrated circuit. During this contract we demonstrated the following significant 'firsts': (1) Monolithic quasioptical millimeter wave oscillator - 35 GHz; (2) Quasioptical oscillator with ... |
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| Design and Development of Microswitches for Micro-Electro-Mechanical Relay Matrices |
JUN 95 |
256 pages |
| Authors:
Mark W. Phipps; AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING
|
| Many different micro-electro-mechanical switches were designed in the Multi-User MEMS processes (MUMPs) and deep x-ray lithography and electroforming (LIGA) processes. The switches were composed of actuators that operated based upon either electrostatic forces or thermal forces. A thermally activated beam flexure actuator that operated based upon differential heating was used extensively. This actuator, which was fabricated in the MUMPs process, was able to deflect up to 12 microns with a ... |
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| Ultra-High-Speed A/D Converter Based on Resonant-Tunneling Diodes |
01 JAN 95 |
120 pages |
| Authors:
Ayub Fathimulla; ALLIED-SIGNAL AEROSPACE CO COLUMBIA MD
|
| Future DoD requirements for RF and microwave systems for signal processing, communications, digital beam-forming, etc., mandate the development of high speed A/D converters. While conventional flash A/D converters have potential for high speed operation, they are highly complex circuits and are power hungry. In this program, we proposed and demonstrated a new approach to an A/D converter using resonant tunneling diodes (RTDs) which operate at higher speeds than conventional flash ... |
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| Microlaser Array Development |
DEC 94 |
46 pages |
| Authors:
Michael Wickman; Phil Hayashida; TRW SPACE AND TECHNOLOGY GROUP REDONDO BEACH CA
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| This report describes the design, construction and characterization of a 2 dimensional micro laser array. The micro laser array consists of a monolithic pump array, microlenses, and a solid state gain module. Passive q- switching on a single element was also demonstrated on this program. The array produced 0.35 Watts of average power with an optical efficiency of 5.8%. 70 elements out of the 108 total elements were lasing and ... |
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| MIKON 94. International Microwave Conference (10th) Held in Ksiaz, Poland on May 30 - June 2, 1994. Volume 2. Conference Proceedings |
94 |
|
| Authors:
Roman Dufrene; WARSAW TECHNICAL UNIV (POLAND)
|
 | Contents: Semiconductor Devices; Passive Devices and Components; Active Devices and Components; Integrated Circuits-Hybrid and Monolithic; Millimeter Technology; Radar Technology; CAD Methods; Antennas and Propagation; Radar Polarimetry; Field Theory; Measurements; Industrial, Agricultural, Environmental and Medical Applications |
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| MIKON 94. International Microwave Conference (10th) Held in Ksiaz, Poland on May 30 - June 2, 1994. Volume 1. Conference Proceedings |
94 |
|
| Authors:
Roman Dufrene; WARSAW TECHNICAL UNIV (POLAND)
|
| Contents: Semiconductor Devices; Passive Devices and Components; Active Devices and Components; Integrated Circuits-Hybrid and Monolithic; Millimeter Technology; Radar Technology; CAD Methods; Antennas and Propagation; Radar Polarimetry; Field Theory; Measurements; Industrial, Agricultural, Environmental and Medical Applications |
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| Improved Field Emitter Current Densities and Stability Through the Application of a Proprietary Process |
FEB 93 |
14 pages |
| Authors:
VARIAN ASSOCIATES INC PALO ALTO CA
|
| As detailed in the previous reports, the necessary current densities (60 A/sq cm, linear current densities (3 mA/mm) and stability (much much more 2 days) to meet the contract goals (at least theoretically) have been achieved. The next step is to fabricate three terminal devices to demonstrate the remaining contract goal - a one GHz current gain cutoff frequency (f sub t). During this period the design of the three ... |
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| OSA Proceedings on Picosecond Electronics and Optoelectronics. Volume 4 |
89 |
282 pages |
| Authors:
T. C. Sollner; David M. Bloom; OPTICAL SOCIETY OF AMERICA WASHINGTON DC
|
| Partial Symposia Contents: High-Speed Lightwave Systems; Ultrafast All-Optical Multiplexing-Demultiplexing Techniques for Future Optical Communications; Picosecond Pulse Generation and Sampling with GaAs Monolithic Integrated Circuits. Investigation of Picosecond Time-Resolved Photoluminescence in Gallium Arsenide with micron Spatial Resolution; Differential Sampling with Picosecond Resolution Using Bulk Photoconductors; Picosecond, Spatially Resolved Optical Detection of Charge-Density Modulation in A1GaAs Lasers; Ultrafast Nonlinearities in In GaAsP Diode Laser Amplifiers; Spread-Spectrum-Integrated Optic Modulators; Subpicosecond Multiple Pulse Formation ... |
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| Beam Assisted Fabrication of III-V/Si Monolithic Devices |
10 SEP 87 |
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| Authors:
Gary Y. Robinson; COLORADO STATE UNIV FORT COLLINS
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| The objective of this research project is to explore two new methods for deposition of III-V semiconducting films on Silicon substrates. Using gas- source molecular beam epitaxy (MBE) and photon-beam and electron-beam assisted metal-organic chemical vapor deposition (MOCVD), Gallium Arsenide and other III- V films with abrupt heterojunctions are being formed epitaxially on Si, and by means of optical and electrical characterization the suitability of the resulting III-V/Si structures are ... |
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| Research in Monolithic Signal-Processing Circuits |
22 JUN 87 |
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| Authors:
R. G. Meyer; D. O. Pederson; CALIFORNIA UNIV BERKELEY ELECTRONICS RESEARCH LAB
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| A new wideband, low-noise bipolar current amplifier has been devised, fabricated and tested. A bandwidth of 184 MHz and input noise of 46 nA rms were achieved. A new low-noise wideband NMOS pre-amplifier was synthesized, fabricated and tested. This yielded 750 MHz bandwidth with 5.5 dB noise figure. New techniques were generated for the realization of very general MOS programmable function synthesizers. |
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| New Ultra-Low Permittivity Composites for Use in Ceramic Packaging of Ga:As Integrated Circuits |
11 AUG 86 |
|
| Authors:
L. E. Cross; PENNSYLVANIA STATE UNIV UNIVERSITY PARK MATERIALS RESEARCH LAB
|
| This report documents work performed over the second year of a three- year joint program between the Materials Research Laboratory at Penn State University and Interamics in La Jolla, CA, to develop new ultra-low permittivity composite dielectrics for use in the ceramic packaging of Ga:As integrated circuits. The period covered by this report is August 1, 1985, to July 31, 1986, and the work was supported by ONR Contract No. ... |
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| Proceedings of the Chinese Conference on Integrated Optics (3rd) Held at Shanghai, China on October 15-20, 1985 |
15 OCT 85 |
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| Authors:
CALIFORNIA UNIV SANTA BARBARA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
|
| Partial contents: 1) The Crossing Channel Electrooptical Modulator and Its Comparison with Other Modulators; 2) Integrated Optoelectronic Devices for Integrated Circuits and Communications; 3) Research Advanced in Lightwave Communication Systems; 4) PTAC system without the Reset In Fiber Acoustic Sensor; Low Loss LPE AlGaAS Waveguide and Monolithic Integrated AlGaAS/GaAS optical Devices: ABSTRACT: The fabrication, processing and performance of integrated optical circuits utilizing A1GaAs and GaAs epitaxial layers grown by liquid ... |
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| Considerations for Millimeter Wave, Monolithic Phased Arrays, |
JAN 1985 |
|
| Authors:
D. H. Schaubert; D. M. Pozar; K. S. Yngvesson; R. W. Jackson; MASSACHUSETTS UNIV AMHERST DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
|
| Some candidate elements for millimeter wave, monolithic phased arrays are discussed. Results of analytical and experimental investigations of printed antennas on high permittivity substrates are presented and discussed in relation to EHF array performance. Scan impedance and blindness are evaluated by analysis and experiment. Methods for interfacing active devices such as FETs with candidate arrray elements are also discussed. (Author) |
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| The Design of a Thermally Efficient 1:256 Ku-Band Feed Network for a MMIC (Monolithic Microwave Integrated Circuit) Phased Array |
JAN 1985 |
20 pages |
| Authors:
C. A. Hancik; D. E. Heckaman; E. J. Bajgrowicz; HARRIS CORP MELBOURNE FL GOVERNMENT AEROSPACE SYSTEMS DIV
|
| A thin, thermally transparent, 1:256 corporate feed network for use in a GaAs MMIC Ku-Band phased array antenna has been designed. The network will be realized using a recently developed RF transmission medium called CHANNELINE. CHANNELINE consists of a core of TFE coated copper wire placed in a channel routed through a heat exchanging metal structure which composes the backside of the array. This unique packaging arrangement conserves both volume ... |
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| Characterization of MMIC (Monolithic Microwave Integrated Circuit) Devices for Active Array Antennas, |
JAN 1985 |
|
| Authors:
J. Smetana; E. Farr; R. Mittra; NATIONAL AERONAUTICS AND SPACE ADMINISTRATION CLEVELAND OH LEWIS RESEARCH CENTER
|
| It has become evident from NASA's active array technology development activities that more attention to the characterization of MMIC devices is needed. Having been fabricated using lithographic techniques, the MMIC has some inherently reproducible RF characteristics. NASA is currently sponsoring studies by the University of Illinois to investigate certain aspects of MMIC interconnectivity. These investigations are expected to contribute to a data base that will lead to providing for reproducible ... |
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| Wideband Monolithic Microwave Amplifier Study |
SEP 1983 |
|
| Authors:
J. B. Beyer; S. N. Prasad; J. E. Nordman; R. C. Becker; G. K. Hohenwarter; WISCONSIN UNIV-MADISON DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
|
| Work is continued on the analysis and design of GaAs FET distributed amplifiers. Design tradeoffs are established for type of device, number of devices, gain, impedance level and line cutoff frequency. The procedure for achieving the maximum gain-bandwidth product is detailed. Preliminary work on a broadband 0-360 degrees phase shifter is reported. The design of an integral part of the phase shifter, a distributed paraphase amplifier from 2 - 20 ... |
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| Monolithic ZnO SAW (Surface Acoustic Waves) Structures |
01 JUL 1983 |
|
| Authors:
R. L. Gunshor; R. F. Pierret; PURDUE UNIV LAFAYETTE IN SCHOOL OF ELECTRICAL ENGINEERING
|
| ZnO-on-silicon surface acoustic wave devices have been fabricated and tested. Electronic erasure of a stored correlator reference was demonstrated, the effect of laser annealing on propagation loss was examined, preliminary ageing studies were performed, and a conceptually new mode conversion resonator configuration was reported. (Author) |
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| Formation of Monolithic Oxide Materials by Chemical Polymerization |
14 JAN 1982 |
|
| Authors:
B. E. Yoldas; D. P. Partlow; WESTINGHOUSE RESEARCH AND DEVELOPMENT CENTER PITTSBURGH PA
|
| Hydrolysis of metal alkoxides results in the formation of polymer molecules with oxide main chains framed by hydroxyl and organic groups. The skeleton of the main structural chains in these polymer molecules is generally analogous to the skeleton of fused silica and quartz. However the method of hydrolysis affects the nature and extent of the oxide network. Thus changes in the hydrolysis process alter many of the fundamental properties of ... |
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| Wideband Monolithic Microwave Amplifier Study |
AUG 1981 |
|
| Authors:
J. B. Beyer; R. C. Becker; J. E. Nordman; WISCONSIN UNIV-MADISON DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
|
| This report discusses distributed amplifier theory in the context of the microwave monolithic GaAs circuit. It is shown that GaAs FET devices dictate that both the input and output transmission lines become lossy which places fundamental limitations on the distributed amplifier concept and results in different constraints than are found in lossless distributed amplifier design. First order theory indicates that gain asymptotically approaches an upper bound and little benefit results ... |
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| Monolithic GaAs Dual-Gate FET Phase Shifter. |
JAN 1981 |
|
| Authors:
M. Kumar; R. Menna; S. N. Subbarao; H. Huang; G. T. Taylor; RCA LABS PRINCETON NJ
|
| This report describes the progress made, during the period 1 Sept. 1980 to 31 Dec. 1980, in the development of a monolithic GaAs dual-gate FET phase shifter. The development of a 0 degrees to 360 degrees phase shifter using discrete components is described. The results on the variation of phase shift with bias voltages of the dual-gate FETs are presented over 4- to 8-GHz band. The progress made in the ... |
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| Lossless Broadband Microwave Switches. |
SEP 1979 |
|
| Authors:
James Vorhaus; RAYTHEON CO WALTHAM MASS RESEARCH DIV
|
| The GaAs dual-gate MESFET is a very powerful microwave device offering more gain and a wider range of functional capabilities than a conventional single-gate FET. It has also been demonstrated that the dual-gate FET can be swithced from full off to full on in less than 50 psec. Combining the high gain and fast switching speed of this device with its inherently high isolation makes it an attractive candidate for ... |
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| GaAs Analog Integrated Circuits (GaAs RF-LSI). Phase I. Progress Report. Volume I. Technical. |
AUG 1979 |
|
| Authors:
TRW DEFENSE AND SPACE SYSTEMS GROUP REDONDO BEACH CA
|
| The overall objective of the GaAs RF-LSI Development Program is the development of a family of monolithic GaAs analog integrated circuits operating at frequencies through X-band, and the implementation of a monolithic X-band receiver which combines a number of these building block circuits. The aim of the first phase effort was to amass the analysis, design, and process technology tools with which to implement the building block circuits and later ... |
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| Monolithic Transformation of Ceramic Materials from Metal-Organic Sols and Gels |
20 JUL 1979 |
43 pages |
| Authors:
B. E. Yoldas; D. P. Partlow; D. M. Mattox; WESTINGHOUSE RESEARCH AND DEVELOPMENT CENTER PITTSBURGH PA
|
| The process used to form monolithic transparent Al2O3 bodies from metal-organic starting materials at low temperature via the gel process involves essentially four steps: hydrolysis, peptization, gel formation, and pyrolysis. Each step has been systematically investigated by modification of associated variables in order to determine the combination of factors which produces optimum results. It has been found that the interparticle distance, that is, the extent of approach attained by colloidal ... |
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| Characterization and Analysis of Indium-Doped Silicon Extrinsic Detector Material. |
NOV 1978 |
|
| Authors:
James Baukus; T. McGill; L. Forbes; Robert Baron; HUGHES RESEARCH LABS MALIBU CALIF
|
| This second six-month report of a two-year program describes progress made in analyzing Si:In detector material. Hall-effect, photoluminescence, and IRFET measurements were performed to characterize the X level and to attempt to determine its nature. (Author) |
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Reports by Keyword(s)
Monolithic structures Electronics
