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Reports by Keyword(s)HIGH VOLTAGE
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Advanced Electrodynamic Tether Systems: Modeling of Scattering and Unsteady Effects 06-Jun-2008
Authors:  Manuel Martinez-Sanchez; Oleg Batishchev; MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF AERONAUTICS/ASTRONAUTICS
The full text of this report is not available and therefore is not for sale. This information is provided for reference purposes only.This work addresses the needs for advanced computational tools and theoretical models devoted to the study of two interrelated topics of interest to the Air Force: Radiation Belt Remediation (RBR) and potential use of tethers as low frequency oscillators/radiators. Both problems stretch the capabilities of existing numerical methods, while connecting with a body of previous work on probe theory, spacecraft-plasma interactions and electrodynamic tether propulsion. The Electrostatic RBR application would ...


Ferroelectric Plasma Thruster 29 FEB 2008 10 pages
Authors:  Scott D. Kovaleski; Mark A. Kemp; MISSOURI UNIV-COLUMBIA
The full text of this report is available for sale.The Ferroelectric Plasma Thruster (FEPT) has been developed as an electrostatic micropropulsion thruster for the smallest classes of spacecraft. The FEPT consists of a thin wafer of lithium niobate ferroelectric material, with a solid electrode on one side, and an electrode with an aperture on the other. When radiofrequency high voltage is applied between the electrodes, through the thickness of the crystal, a combination of triple point and piezoelectric effects ...


Development of Numerical Simulation Methods for Analysis of Laser Guided Arc Discharge 29-Feb-2008 46 pages
Authors:  William Page; William Zimmerman; Brian Fisk; AIR FORCE RESEARCH LAB KIRTLAND AFB NM DIRECTED ENERGY DIRECTORATE
The full text of this report is available for sale.Modeling of the Use of USP laser pre-ionization as a guide path for a high voltage discharge in air was addressed. The physical processes involved are complex and span many orders of magnitude in the temporal and spatial resolution that must be considered. A two dimensional simulation model was produced that treats the problem in different time regimes with suitable approximations. The theoretical models and numerical models developed are described ...


Comparison of Gallium Nitride High Electron Mobility Transistors Modeling in Two and Three Dimensions DEC 2007 77 pages
Authors:  William A. Gibson; NAVAL POSTGRADUATE SCHOOL MONTEREY CA
The full text of this report is available for sale.This thesis looks at modeling Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) Semiconductors. The GaN device has potential future military use in the high power and high frequency operation replacing costly millimeter wave tubes This would affect military radar systems, electronic surveillance systems, communications systems and high voltage power systems by providing smaller and more reliable devices to drive operation This thesis looks at using diamond substrate to improve ...


Incident, Action, Recovery, and Recommissioning for the 4.5-MJ Pulsed Power Supply Located at the Electromagnetic Gun Facility, Barricade C, Aberdeen Proving Ground, MD APR 2007 30 pages
Authors:  Alex Zielinski; Miguel Del Guercio; Alex Michlin; Steve Niles; Anthony Canami; Robert Glassman; ARMY RESEARCH LAB ABERDEEN PROVING GROUND MD
The full text of this report is available for sale.A 4.5-MJ capacitor-based pulsed power system (PPS), previously owned and operated by General Dynamics Land Systems in the early 1990s, was acquired by the U.S. Army Research Laboratory. The system was placed in storage in the late 1990s. It was recently modified and, in 2001, was placed back in operation at barricade C to operate with an electromagnetic (EM) railgun load. On 9 February 2006, a capacitor in module 4 ...


Solid State Capacitor Discharge Pulsed Power Supply Design for Railguns MAR 2007 74 pages
Authors:  Jesse H. Black; NAVAL POSTGRADUATE SCHOOL MONTEREY CA
The full text of this report is available for sale.This thesis presents a solid state thyristor switched power supply capable of providing 50 kJ from a high voltage capacitor to a railgun. The efficiency with which energy is transferred from a power supply to a projectile depends strongly on power supply characteristics. This design will provide a better impedance match to the railgun than power supplies utilizing spark gap switches. This supply will cost less and take up less ...


Plasma Assisted Combustion 28 FEB 2007 372 pages
Authors:  Andrei Y. Starikovskii; RUSSIAN ACADEMY OF SCIENCES MOSCOW INST OF PHYSICS AND TECHNOLOGY
The full text of this report is available for sale.This report results from a contract tasking Moscow Institute of Physics and Technology as follows: The contractor will investigate the use of high voltage, nano-second plasma discharges to ignite and efficiently combust fuel/air mixtures in high speed flows. This strongly nonequilibrium low-temperature plasma has a high mean energy of electrons and will provide a source of reactive atoms, radicals, and excited molecules which has been shown to enhance ignition and ...


Biological Effects of Electromagnetic Fields 27 NOV 2006 1508 pages
Authors:  IOANNINA UNIV (GREECE)
The full text of this report is available for sale.The Final Proceedings for Biological Effects of Electromagnetic Fields held on 16-20 October 2006.


Predictive & Prognostic Controller for Wide Band Gap (Silicon Carbide) Power Conversion (Preprint) NOV 2006 20 pages
Authors:  Gregg Davis; Leo Casey; Brett Jordan; Jim Scofield; Kirby Keller; Jim Sheahan; Jeffrey Roach; Michael Scherrer; Ranbir Singh; SATCON TECHNOLOGY CORP BOSTON MA
The full text of this report is available for sale.This report was developed under a SBIR contract. This paper presents an approach to predictive control and prognostication intended to increase the confidence levels for power converters in aerospace applications. One goal of this work is to accelerate the adoption of new technologies, such as advanced power semiconductor devices. While the devices are immature the technology provides significant overall performance advantages. Using prognostication it is hoped to significantly increase the ...


6H Silicon Carbide Photoconductive Switches for High Power Applications NOV 2006 8 pages
Authors:  W. C. Nunnally; N. Islam; K. Kelkar; C. Fessler; MISSOURI UNIV-COLUMBIA COLL OF ENGINEERING
The full text of this report is available for sale.High voltage, high current, low inductance, fast resistive transition, precisely controlled switches as the critical component that can enable fielding the most compact pulse power systems. Presently, the only known switch technology with the potential to fulfill these requirements is photo-conductive switching of bulk semiconductors. This document discusses the additional developments of extrinsic, semi-insulating, Silicon Carbide, photo-conductive switches that are required to bring the photo-SIC switch to technology readiness level ...


Fast Multi-Spectral Liquid-Crystal-On Silicon Spatial Light Modulators (Preprint) SEP 2006
Authors:  John R. McNeil; Michael J. O'Callaghan; Mark A. Handschy; Guoqiang Zhang; Anatoliy Glushchenko; John L. West; Kerry Lane; Stephen D. Gaalema; DISPLAYTECH INC LONGMONT CO
The full text of this report is not available and therefore is not for sale. This information is provided for reference purposes only.The stressed liquid-crystal (SLC) electro-optic effect promises fast electro-optic response times even for design wave-lengths in the infrared (IR). Here we report characteristics of SLC devices appropriate for use as liquid-crystal-on-silicon (LCOS) spatial light modulators (SLMs) in the near-IR band (lambda = 1.8 to 2.5 mum), mid-IR band (3 to 5.5 mum) and far-IR band (8 to 14 mum). For these three bands, we fabricated SLC devices with 5, 10, ...


Bioelectromagnetics 2005 14 AUG 2006 569 pages
Authors:  HOSPITAL RAMON Y CAJAL MADRID (SPAIN) DPTO INVESTIGACION-BIOELECTROMAGNETISMO
The full text of this report is available for sale.The Final Proceedings for Bioelectromagnetics 2005, 20 June - 24 June 2005. The Bioelectromagnetics Society (BEMS) and the European BioElectromagnetics Association (EBEA) will meet jointly in Dublin, Ireland for Bioelectromagnetics 2005. Topics include: 1) the role of electric fields in wound healing and nerve regeneration; 2) ultrashort high voltage pulses for tumor treatment; 3) therapeutic uses of magnetic fields; 4) health effects from radiofrequency exposure; 5) RF standards and epidemiology; ...


A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs (Preprint) AUG 2006 6 pages
Authors:  Sei-Hyung Ryu; Sumi Krishnaswami; Brett Hull; Bradley Heath; Fatima Husna; James Richmond; Anant Agarwal; John Palmour; James Scofield; CREE RESEARCH INC DURHAM NC
The full text of this report is available for sale.High temperature characteristics of 4H-SiC power JFETs and DMOSFETs are presented in this paper. Both devices are based on pn junctions in 4H-SiC, and are capable of 300 degrees C operation. The 4H-SiC JFET showed very predictable, well understood temperature dependent characteristics, because current conduction depends on the drift of electrons in the bulk region, which is not restricted by traps in the MOS interface or pn junctions. However, in ...


Impulse Flashover Tests at Edgar Beauchamp High Voltage Test Facility, Dixon, California, in Support of Cutler Insulator Failure Investigation JUL 2006 42 pages
Authors:  P. M. Hansen; G. Dann; SPACE AND NAVAL WARFARE SYSTEMS CENTER SAN DIEGO CA
The full text of this report is available for sale.This report describes an investigation into safety core insulator failures at Naval Radio Transmitting Station, Cutler, Maine. The failures are believed to be the result of lightning strikes to the antenna. Impulse tests showed that flashover occurred along the surface of the insulator when the voltage rises very fast (high dV/dt), resulting in damage to the insulators. Scale model tests were conducted to determine if different corona ring configurations could ...


Development of AlGaN/GaN High Electron Mobility Transistors (HEMTS) on Diamond Substrates JUN 2006 75 pages
Authors:  Wesley S. Newham; NAVAL POSTGRADUATE SCHOOL MONTEREY CA
The full text of this report is available for sale.Silicon based semiconductor devices are rapidly approaching the theoretical limit of operation and are becoming unsuitable for future military requirements. The scope of semiconductor devices has been expanded by wide bandgap devices such as gallium nitride (GaN) to include the possibility for high power and high frequency operation. A new generation of high speed high frequency devices is required to meet current and future military needs. The Gallium Nitride High ...


High-Voltage Polymers for High-Power Supercapacitors. Version 1 30 MAY 2006 26 pages
Authors:  Nicholas Prokopuk; NAVAL AIR WARFARE CENTER WEAPONS DIV CHINA LAKE CA
The full text of this report is available for sale.New polymer supercapacitors were constructed from novel hybrid poly(triarylamines) with organic electrolytes. The new polymers contain benzyl or nitro functionalized aromatic side groups. In addition to the anilino segments, the polymer backbone contains either furanyl or thiophenyl linkages. These electronic and structural varieties provide polymers with a range or oxidation potentials. The nitro-furane derivative exhibits the highest oxidation potential and supercapacitors constructed with anodes or this polymer and organic electrolytes ...


Development of a Low Loss, High Dielectric Strength Microwave Substrate 01-May-2006 5 pages
Authors:  D Sanders; S Sampayan; G Caporaso; M Rhodes; J Watson; K Slenes; J De La Jacquina; R Fuenta; L Thurmond; LAWRENCE LIVERMORE NATIONAL LAB CA
The full text of this report is available for sale.This work describes a comparison of two candidate materials for pulse forming line fabrication with respect to bulk dielectric breakdown, frequency response of relative permittivity, and dielectric loss. One material is a commercially available microwave substrate material that can be procured in sheet form without a high voltage specification, while the other is a newly developed material that also comes in sheet form that can also be cast between the ...


6H-SiC Photoconductive Switches Triggered at Below Bandgap Wavelengths May-2006 5 pages
Authors:  J S Sullivan; J R Stanley; LAWRENCE LIVERMORE NATIONAL LAB CA
The full text of this report is available for sale.Semi-insulating Silicon Carbide (SiC) is an attractive material to use to construct high voltage, compact, photoconducting semiconductor switches (PCSS) due to its large bandgap, high critical electric field strength, high electron saturation velocity, and high thermal conductivity. The critical field strength of 3 MV/cm of 6H-SiC makes it particularly attractive for compact, high voltage, fast switching applications such as a Dielectric Wall Accelerator (DWA). To realize the benefits of the ...


High Power Density Capacitor Charging Power Supply Development for Repetitive Pulsed Power May-2006 5 pages
Authors:  M M McQuage; V P McDowell; F E Peterkin; J A Pasour; NAVAL SURFACE WARFARE CENTER DAHLGREN VA DIRECTED ENERGY TECHNOLOGY OFFICE
The full text of this report is available for sale.Power modulators for compact, repetitive systems are continually faced with new requirements as the corresponding system objectives increase. Changes in pulse rate frequency or number of pulses significantly impact the design of the power conditioning system. In order to meet future power supply requirements, we have developed several high voltage (HV) capacitor charging power supplies (CCPS). This effort focuses on a volume of 6x6x14 and a weight of 25 lbs. ...


Inductance, Capacitance, and Resistance of a Surrogate Exploding Wire May-2006 5 pages
Authors:  H Singh; W J Sarjeant; J Berkow; S Olabisi; M Hood; K Struzik; STATE UNIV OF NEW YORK AT BUFFALO ENERGY SYSTEMS INST
The full text of this report is available for sale.Recent research into the exploding wire phenomenon has shown that capacitor grade metallized polypropylene film (MPPF) may perform as a surrogate to an exploding wire. The reaction of the MPPF to a high voltage capacitive discharge is similar to that of an exploding wire. A key difference that exists between the MPPF and the wire is that due to geometry, the stray capacitance and inductance of the film may have ...


Effect of Substrate Thickness on Exploding Films May-2006 5 pages
Authors:  A Halstead; H Moore; S Olabisi; J Zirnheld; P Strzempka; B Urbanczyk; STATE UNIV OF NEW YORK AT BUFFALO ENERGY SYSTEMS INST
The full text of this report is available for sale.The exploding wire phenomenon is well researched due to its vast and practical applications which include, but are not limited to, shock wave generation, pulsed power, Z pinch physics, plasma ignition, fuses, and fusing applications. However, the focus of this research is on a surrogate for exploding wires. In this research, metallized capacitor grade-polypropylene film was used as an alternative for the traditional wire of a uniform diameter. The films ...


Alternate Approaches to Laser Guided Discharges 19 APR 2006 25 pages
Authors:  J. Davis; R. E. Terry; G. M. Petrov; A. L. Velikovich; NAVAL RESEARCH LAB WASHINGTON DC
The full text of this report is available for sale.We propose a novel use of laser induced breakdown channels to establish a transmission line through air, which terminates at a distant load object.


A Double-Pole High Voltage High Current Switch DEC 2005 68 pages
Authors:  Dagmara W. Moselle; NAVAL POSTGRADUATE SCHOOL MONTEREY CA
The full text of this report is available for sale.Substantial research has been done to find the best power supply to drive the Naval railgun. Inertial energy storage using rotating machines, high voltage and low voltage capacitors, and batteries have been candidates. Low voltage capacitors and batteries are, or may soon be, possible energy sources. These low voltage energy sources would require a pulse forming inductive network (PFIN) to transform the low-voltage electrical energy to power appropriate for the ...


Colloid Thrusters, Physics, Fabrication and Performance 17 NOV 2005 14 pages
Authors:  Manuel Martinez-Sanchez; Akintunde I. Akinwande; MASSACHUSETTS INST OF TECH CAMBRIDGE SPACE PROPULSION LAB
The full text of this report is available for sale.This document summarizes the results of 3 and 1/2 years of work by our team on the basic physics and technology required for the development of Colloid Thrusters (also called more recently Electrospray Thrusters). The research covered the basic physics of operation in the mixed ion-droplet mode, later extended to the newly discovered pure ionic mode, the microfabrication in Silicon of two types of arrays of colloid or electrospray emitters, ...


A Low Power, Novel Ignition of Fuels Using Single-Wall Carbon Nanotubes (SWCNTs) and a Camera Flash (PREPRINT) 14 NOV 2005 9 pages
Authors:  S. A. Danczyk; B. Chehroudi; A. D. Ketsdever; G. L. Vaghjiani; ENGINEERING RESEARCH AND CONSULTING INC (ERC INC) EDWARDS AFB CA
The full text of this report is available for sale.Many current industrial processes that utilize fuel/oxidizer chemical reactions often require an initiation stimulus, or an ignition source, to start the conversion of the chemicals to the products and release heat. A device which achieves this goal is a critical system component for most combustion processes especially in mobile and stationary power producing machines. For example, improper ignition during the firing of a rocket engine for lift-off can lead to ...


Summary of Inductive SiC BJT Switching NOV 2005 18 pages
Authors:  Steven L. Kaplan; ARMY RESEARCH LAB ADELPHI MD
The full text of this report is available for sale.Significant development of silicon carbide (SiC) for device applications allows its uniquely favorable properties to be exploited in circuit designs. The 4H-SiC structure has several characteristics that provide optimal speed and power handling. These include wide bandgap (3 cV), high dielectric breakdown (3.5 MV/cm), and high thermal conductivity (5 W/cm-K) [1]. By combining these properties, SiC bipolar junction transistors can achieve fast switching at high voltages (1.2 kV). New generation ...


Reversible Nanoparticle Electronics SEP 2005 14 pages
Authors:  Angela Belcher; MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF MATERIALS SCIENCE AND ENGINEERING
The full text of this report is available for sale.Phage and yeast both exhibit excellent resiliency to electric field exposure at low currents. The viability of phage and yeast in high voltage fields was tested, opening the door to the exploration of these species as medium for self-repairing electronics applications. Furthermore, survival after high field exposure suggested that electro-spun phage are likely to remain viable, even after they are incorporated into fabrics. Pulsed electric fields were used to successfully ...


Ultrawideband Radio Frequency (RF) Enhanced Electroporation for Chemotherapy AUG 2005 31 pages
Authors:  R. M. Gilgenbach; Y. Y. Lau; M. D. Uhler; D. Jordan; MICHIGAN UNIV ANN ARBOR
The full text of this report is available for sale.Experimental results are presented for a research program in which high voltage, short-pulsed, ultrawideband electric fields have been demonstrated to enhance the effects of chemotherapy upon killing of Jurkat (cancer) cells. Electric fields of about 100kV/cm have been shown to enhance the killing of Jurkat cells by up to a factor of 1,000 over a low dose of the drug bleomycin. Enhancement of chemotherapy was also found at lower electric ...


Development of High-Temperature, High-Power, High-Efficiency, High-Voltage Converters Using Silicon Carbide (SiC) Delivery Order Delivery Order 0002: Critical Analysis of SiC VJFET Design and Performance Based Upon Material and Device Properties AUG 2005 126 pages
Authors:  YunMo Sung; Michael S. Mazzola; MISSISSIPPI STATE UNIV MISSISSIPPI STATE CENTER FOR ADVANCED SEMICONDUCTOR PROTOTYPING
The full text of this report is available for sale.Silicon carbide as a semiconductor material possesses several significant physical properties which make it superior for applications to high power devices. This report documents the efforts to develop, demonstrate, and optimize the design and fabrication methodologies for the realization of power vertical junction field effect transistors in the 4H-polytype of silicon carbide. Theoretical prediction and modeling simulation, incorporating all the significant SiC specific device physics, are utilized to develop a ...


MEMS Colloid Thruster Array JUN 2005 33 pages
Authors:  James Nabity; TDA RESEARCH INC WHEAT RIDGE CO
The full text of this report is available for sale.TDA designed a single MEMS colloid emitter that can be readily extended to a multi-emitter array. The annular electrodes proposed by TDA and UC-Boulder have high local electric field strength at the nozzle to reduce the voltage needed to activate the electrospray. They also designed a fluidic valve to passively meter flow to each emitter in the array. Detailed micro fabrication process recipes were developed and proven by actually building ...


Development of a 90kW, Two-Phase, Bi-Directional DC-DC Converter for Power Dense Applications DEC 2004 3 pages
Authors:  Damian Urciuoli; C. W. Tipton; Donald Porschet; ARMY RESEARCH LAB ADELPHI MD
The full text of this report is available for sale.In this summary, the preliminary design and test results of a two- phase interleaved, non-isolated, bi-directional DC-DC converter (BDC) for hybrid electric vehicle applications are presented. The converter was initially designed for sustained operation at 90kW, providing power flow in either direction between the low-voltage vehicle battery pack (nominal 320V) and its high-voltage load bus (nominal 600V). Strong design emphasis was placed on high power density, and high temperature operation. ...


Heterodyne Interferometer for Triggering Gas-Puff PRSs 25 MAY 2004 33 pages
Authors:  Robert C. Hazelton; HY-TECH RESEARCH CORP RADFORD VA
The full text of this report is available for sale.Consistent timing between the injection of gas in plasma radiation sources (PRSs) and the generator current pulse is crucial to producing high- yield x-ray pulses. This Phase 1 SBIR effort has shown that triggering modes currently used in DTRA's x-ray simulator program (high voltage trigger pin; command fire mode) introduce an effective variation in initial load mass of +/- 11%, and this may be as high as +/-20%. This variation ...


Terahertz Devices: Tunable and Mode-Locked p-Ge THz Laser 05 MAY 2004 11 pages
Authors:  J. Fredricksen; R. E. Peale; ZAUBERTEK INC ORLANDO FL
The full text of this report is available for sale.This Phase II STTR project developed and demonstrated a corn pact, turn-key, cryogen-free, p-type germanium laser, tunable over the range 1.5A.2 THz (70-200 micron wavelength), with I Watt peak power. A new type of intracavity gain modulator with potential application to active mode locking was discovered. improvement in the gain of the active p-Ge crystal by homogeneous neutron transmutation doping was experimentally shown. An alternative means of gain improvement, which ...


Design and Analysis of a 15-kV Package for Wide Bandgap Semiconductor MAY 2004 18 pages
Authors:  Dimeji Ibitayo; C. W. Tipton; ARMY RESEARCH LAB ADELPHI MD
The full text of this report is available for sale.The development of wide bandgap semiconductor materials such as silicon carbide (SiC) has made possible devices that exceed the voltage ratings of conventional component packaging schemes. As such a new class of high voltage packages must be developed to realize the full potential of these technologies. We report on the electrostatic analysis and design of a t5-kV ceramic package using the ANSYS Multiphysics software. To baseline our work. a standard ...


Comparison of Experimental Measurements and Theoretical Description for Cathode-Directed Streamer 07 APR 2004 1 pages
Authors:  S. Pancheshnyi; M. Nudnova; D. Opaits; A. Strikovskii; MOSCOW INST OF PHYSICS AND TECHNOLOGY DOLGOPRUDNYI (RUSSIA)
The full text of this report is available for sale.At this work complex study of positive streamer development in N2/O2 mixtures at pressure range 0.1-2.0 atm has been performed. Experimental measurements of streamer discharge dynamics have been compared with direct numerical simulation within the scope of 2D hydrodynamics approach. Self consistent analytical model that allows with the use of known potential of the high-voltage electrode to obtain associated values of the streamer parameters was developed and verified.


DC Diaphragm Discharge in Water Solutions 07 APR 2004 2 pages
Authors:  Zdenka Stara; Frantisek Krcma; CZECH TECHNICAL UNIV PRAGUE
The full text of this report is available for sale.This contribution is focused on the investigation of the non-pulsed DC diaphragm discharge in water solutions. The optical emission spectroscopy was used for investigating the light spectrum of the diaphragm discharge in the solution. The light intensity was dependent on the initial discharge conditions.


The Ion Functions of One-Dimensional Active Plasma Layer of High-Current Gas Discharges 07 APR 2004 2 pages
Authors:  Vladimir P. Shumilin; ALL-UNION ELECTRICAL ENGINEERING INST MOSCOW (USSR)
The full text of this report is available for sale.Active plasma layer (APL) is a quasineutral plasma area bordering with cathode space charge layer. All generated in APL ions get to cathode. In 1 it has been shown, that in intensive discharges there is a multiple gas compression in APL. In the present work the important characteristic of discharges, P(sub 0), equal to number of ions coming on cathode in recalculation on one neutral flying from cathode is considered. ...


Experimental Study of Solar Array-Plasma Interaction 07 APR 2004 2 pages
Authors:  B. V. Vayner; D. C. Ferguson; J. T. Galofaro; NATIONAL AERONAUTICS AND SPACE ADMINISTRATION CLEVELAND OH GLENN RESEARCH CENTER
The full text of this report is available for sale.The results are presented of an experimental study of arc phenomena and snap over for five types of solar array samples immersed in xenon plasma. I-V curves are measured, and arc and snap over inception voltages, essential parameters, are essential parameters, and arc rates are determined. It is shown that the array with wrap through interconnects has the highest arc threshold and the lowest current collection. Cover glass design with ...


High-Efficiency Silicon Carbide (SiC) Converters. Delivery Order 0001: Development of High-Temperature, High-Power, High-Efficiency, High-Voltage Converters Using Silicon Carbide MAR 2004 148 pages
Authors:  Janna R. Bonds; Michael S. Mazzola; MISSISSIPPI STATE UNIV MISSISSIPPI STATE CENTER FOR ADVANCED SEMICONDUCTOR PROTOTYPING
The full text of this report is available for sale.A design based on a self- aligned, gate-implanted, trenched source- gate junction FET was selected for its near term technological readiness and its long term manufacturability. This project concentrated on several key processes required for the realization of a viable VJFET fabrication technology, namely, 1) Development of silicon carbide dry (plasma) etches; 2) Development of appropriate edge termination technology; and 3) Development of implantation and annealing recipes core to the ...


Understanding Ion Transport in Conjugated Polymers 10 FEB 2004 7 pages
Authors:  Elisabeth Smela; Benjamin Shapiro; Xuezheng Wang; MARYLAND UNIV COLLEGE PARK
The full text of this report is available for sale.Ion transport is critical to improving the performance of conjugated polymer actuators, particularly their strain and speed. We present a novel device that allows us to measure ion transport directly and independently from electron transport in PPy films. The device geometry makes the path for ions much longer than that for electrons, ensuring that ion transport is the rate- limiting step. In addition, ion transport is visualized directly though the ...


Advanced Ultrabright X-Ray Sources for the Study of Superenergetic States of Matter 03 NOV 2003 4 pages
Authors:  Charles K. Rhodes; ILLINOIS UNIV AT CHICAGO
The full text of this report is available for sale.A class of ultrabright multi-kilovolt x-ray sources has been developed that can serve an array of new measurements and applications concerning the properties of all forms of condensed matter. In comparison to presently available synchrotron technology, the experimentally demonstrated superiority in performance (peak brightness per unit cost) is approximately a factor of 10(exp 10). An important characteristic of these sources is their intrinsic capability to produce coherent energy at an ...


Effects of Classical and Quantum Charge Fluctuations on Sequential Electron Tunneling in Multiple Quantum Wells 15 SEP 2003 10 pages
Authors:  Danhong Huang; D. A. Cardimona; AIR FORCE RESEARCH LAB KIRTLAND AFB NMSPACE VEHICLES DIRECTORATE
The full text of this report is available for sale.A previous theory M. Ershov et al., Applied Physics Letters, v67, 3147 (1995) for studying the distribution of nonuniform fields in multiple quantum-well photodetectors under an ac voltage is generalized to include nonadiabatic space-charge-field effects. From numerical results calculated by the generalized theory, it is found that field-domain effects are only important at high temperatures or high voltages, where both injection and sequential- tunneling currents are expected to be large. ...


Apparatus and Method for Calibrating Voltage Spike Waveforms 26 AUG 2003 26 pages
Authors:  Joseph M. Muhitch; DEPARTMENT OF THE NAVY WASHINGTON DC
The full text of this report is available for sale.It is therefore an object of the present invention to provide an apparatus and method for calibrating voltage spike waveforms that are used to test the survivability and compatibility characteristics of electrical equipment including military and commercial off-the-shelf electrical devices. It is another object of the present invention that the aforesaid apparatus and method be relatively inexpensive to implement. Thus, the present invention is directed to, in one aspect, an ...


Force on an Asymmetric Capacitor JUN 2003 37 pages
Authors:  Thomas B. Bahder; Christian Fazi; ARMY RESEARCH LAB ADELPHI MD
The full text of this report is available for sale.When a high voltage (approx. 30 kV) is applied to a capacitor whose electrodes have different physical dimensions, the capacitor experiences a net force toward the smaller electrode (Biefeld-Brown effect). We have verified this effect by building four capacitors of different shapes. The effect may have applications to vehicle propulsion and dielectric pumps. We review the history of this effect briefly through the history of patents by Thomas Townsend Brown. ...


Self-oscillating Ultrasonic Micro-motor and It's Application JUN 2003
Authors:  A. Iino; K. Suzuki; M. Suzuki; K. Nitadori; M. Kasuga; SEIKO INSTRUMENTS INC CHIBA (JAPAN)
The full text of this report is not available and therefore is not for sale. This information is provided for reference purposes only.We have developed an ultrasonic micro-motor, which is expected to be used in a broad range of fields. The ultrasonic micro-motor, which can be driven by a single signal and change the rotational direction of a rotor easily by only selecting the electrode to apply drive signal, can easily construct a self- oscillating circuit and simplify the drive circuit. We have also simplified the motor structure which is easy to ...


Investigation of Jet Vapor Deposited (JVD) Silicon Oxide/Nitride/Oxide (ONO) Films as Gate Dielectrics for SiC and GaN Devices 31 MAR 2003 14 pages
Authors:  James A. Cooper Jr; PURDUE UNIV LAFAYETTE IN SCHOOL OF ELECTRICAL AND COMPUTER ENGINERING
The full text of this report is available for sale.Jet vapor deposited (JVD) silicon dioxide-nitride-dioxide (ONO) films are investigated as gate dielectrics for SiC MOS transistors and GaN high- electron-mobility transistors (HEMTs). The JVD process employs supersonic jets of a light carrier gas such as helium to transport depositing vapor from the source to the substrate. The high impact energies of the depositing species allow the use of room-temperature substrate, which contributes to improved film quality.


Modular Micromachined Si Heat Removal (MOMS Heat Removal): Electronic Integration and System Test 02 JAN 2003 52 pages
Authors:  Elliott R. Brown; CALIFORNIA UNIV LOS ANGELES DEPT OF ELECTRICAL ENGINEERING
The full text of this report is available for sale.The UCLA group headed by Dr. Elliott Brown and the Rockwell Scientific group headed by Dr. Michael Shaw conducted extensive research for the DARPA HERETIC Program on the integration of two heat-removal approaches with power electronic devices, (1) micro heat pipes and (2) micro spray nozzles. Two types of power devices were investigated: (1) insulated-gated bipolar transistors (IGBTs), and (2) laterally-diffused (LD) MOSFETs. Heat pipes were found to provide little ...


Physics of Non-Adiabatic Transport and Field-Domain Effect in Quantum- Well Infrared Photodetectors 2003 16 pages
Authors:  Danhong Huang; D. A. Cardimona; AIR FORCE RESEARCH LAB KIRTLAND AFB NMSPACE VEHICLES DIRECTORATE
The full text of this report is available for sale.A previous theory for studying the distribution of non-uniform fields in multiple-quantum-well photodetectors under an ac voltage is generalized by including non-adiabatic space-charge-field effects. Numerical calculations indicate that field-domain effects are only important at high temperatures or high voltages when both injection and sequential-tunneling currents are significant. On the other hand, it is found that the non-adiabatic effects included in this generalized theory become significant at low temperatures and low ...


1570V, 14A 4H-SiC Bipolar Darlington with a High Current Gain of Beta>462 2003 4 pages
Authors:  Jian H. Zhao; Jianhui Zhang; Petre Alexandrov; Terry Burke; ARMY TANK-AUTOMOTIVE COMMAND WARREN MI
The full text of this report is available for sale.This paper reports the design, fabrication and characterization of a 4H-SiC bipolar Darlington with both high DC common emitter current gain and high voltage. The driving and output transistors are designed and fabricated on the same chip with a 12um, 8.5x10(15)cm(-3) doped drift layer and a 1 um 4.1x10(17)cm(-3) doped p base. The Darlington's drive transistor is capable of 1,600V and 5A with a maximum current gain beta(sub 1) over ...


Symposium K: Silicon Carbide - Materials, Processing, and Devices DEC 2002 23 pages
Authors:  Stephen E. Saddow; Nelson S. Saks; David J. Larkin; Adolf Schoener; MATERIALS RESEARCH SOCIETY WARRENDALE PA
The full text of this report is available for sale.Symposium K is the second in a series of SiC symposia at the MRS Fall Meeting. Since the last meeting in 2000, advances in SiC materials, processing, and device design have resulted in implementation of SiC-based electronic systems and offer great promise in high voltage, high temperature, high frequency applications. Presenters focused on new developments in the basic science of SiC materials as well as rapidly maturing device technologies. The ...


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