| Processing for Highly Efficient AlGaN/GaN Emitters |
09-Sep-2009 |
14 pages |
| Authors:
Ilesanmi Adesida; ILLINOIS UNIV AT URBANA-CHAMAPAIGN
|
 | The fabrication of high-quality ohmic contacts on n- and p-type (Al,In)GaN is essential for improving the performance of optoelectronic devices, such as blue light emitting diodes, metal-semiconductor field effect transistors, HEMTs, and laser diodes. In particular, to realize solid-state UV emitters for chembioagent detection and general lighting, the formation of reliable ohmic contact systems for both n- and p-AlGaN with relatively high Al contents are indispensable. In conjunction with efforts ... |
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| Solution Deposition Methods for Carbon Nanotube Field-Effect Transistors |
Jun-2009 |
32 pages |
| Authors:
Matthew Ervin; Natalie Salaets; ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE
|
| This study evaluated different methods for controlled deposition of carbon nanotubes (CNTs) from solution onto a silicon substrate to make CNT field-effect transistors (FETs). The goal of this deposition was to achieve reproducible device properties through more uniform CNT densities and other traits. This method serves as an easier, room temperature alternative to chemical vapor deposition growth. Three different types of CNT solutions were spun onto substrates: pristine tubes solubilized ... |
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| Real-time Intelligent Chemical and Biological Nanosensors on Flexible Platform - II |
Mar-2009 |
22 pages |
| Authors:
Govind Mallick; Shashi P Karna; ARMY RESEARCH LAB ABERDEEN PROVING GROUND MD WEAPONS AND MATERIALS RESEARCH DIRECTORATE
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| In this report, we investigate the current rectification property of chemical vapor deposited (CVD), as-grown single-walled carbon nanotubes (SWNTs). We use the long strands of SWNT bundles to fabricate multiple arrays of switching devices with channel lengths of 3, 5, 7, and 10 micrometer on a 15 x 15 mm2 silicon dioxide (SiO2) on silicon (Si) substrate. A majority of the fabricated devices, regardless of channel length, showed current rectification ... |
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| A Validation of a Molecular Dynamics Simulation in Determining the Thermal Conductivity of a La-Zr Pyrochlore |
Dec-2008 |
97 pages |
| Authors:
Jeremiah J Cheatum; NAVAL POSTGRADUATE SCHOOL MONTEREY CA DEPT OF MECHANICAL ENGINEERING
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| Semiconductors continue to shrink in size and are now nearing the performance limits of some traditional materials. Silicon Dioxide, which has been used extensively as a gate insulator in MOSFETs, is one such material and so research is focusing on finding a suitable replacement with a high dielectric constant. Oxides of Lanthanum and Zirconium have been identified as possible successors, but these compounds have not been well studied. This thesis ... |
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| The Effect of Radiation on the Electrical Properties of Aluminum Gallium Nitride/Gallium Nitride Heterostructures |
01-Jun-2008 |
176 pages |
| Authors:
John W McClory; AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH GRADUATE SCHOOL OF ENGINEERING AND MANAGEMENT
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| AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) were irradiated at low temperature and the temperature dependent changes to drain current, gate current, capacitance, and transconductance were measured. The results were compared to the charge control model of the drain current and trap-assisted tunneling model of the gate current to determine the source of the radiation-induced changes. AlGaN/GaN HFETs demonstrated threshold voltage shifts and drain current changes after irradiation. After electron and ... |
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| High-Density Power Supplies Using Silicon Carbide (SiC) Delivery Order 0001 |
MAR 2008 |
70 pages |
| Authors:
David C. Sheridan; SEMISOUTH LABORATORIES STARKVILLE MS
|
| This program was designed to improve the reliability and performance of electrical power systems and components, while reducing operational life cycle costs for a wide variety of aircraft and space electrical power-system generation, conditioning, and utilization equipment applications. To achieve these objectives, research efforts were conducted for the advancement of silicon carbide (SiC) power device technology in the technical areas of advanced design, manufacturability, and component reliability. This delivery order ... |
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| Hybrid Semiconductor Nanostructures as Unique Capabilities in the Direct Detection of Proteins, Viruses, and DNA |
06 FEB 2008 |
5 pages |
| Authors:
Kuan-Jiuh Lin; Watson Kuo; Ching-Hsiu Tsai; NATIONAL CHUNG HSING UNIV TAICHUNG (TAIWAN)
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| Nano approach to fighting cancer is exploding. Devices based on field-effect transistors (FETs) are one of emerging fields for sensing technology. Several other research terms have made similar progress in electrically detecting cancer specific markers using new types of nanodevices. Lieber and colleagues doped charge-carrying silicon nanowires with monoclonal antibodies specific for the cancer proteins. When the proteins linked up with the antibodies, the electrical charges of the proteins changed ... |
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| Spintronic Nanodevices Defines by Nanolithography |
15 DEC 2007 |
15 pages |
| Authors:
Charles J. O'Connor; NEW ORLEANS UNIV LA
|
| The purpose of this report is to document the results of the complete effort for this project, which was to explore the possibilities of employing nanoparticles, nanostructured thin films, and nanowires in spintronic nanodevice fabrication by using e-beam lithography techniques at AMRl-UNO. |
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| Defects and Related Carrier Traps in GaN AlGaN and Implanted SiC |
08 OCT 2007 |
11 pages |
| Authors:
Venkata R. Mulpuri; GEORGE MASON UNIV FAIRFAX VA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
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| In this project, work has been performed on nine different topics: (1) Ultra-fast microwave annealing of ion-implanted 4H-SiC ; (2) Silicon carbide nanowires grown by a novel microwave heating-assisted physical vapor transport process; (3) Depth resolved X-ray determination of surface strain in free-standing films of HVPE-grown GaN and 71Ga NMR characterization (4) Effects of the surface and interface related defects in free-standing HVPE grown GaN films by high resolution X-ray ... |
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| A Comparison of SiC Power Switches for High-Rel Defense Applications (preprint) |
JUL 2007 |
6 pages |
| Authors:
Michael S. Mazzola; Jeffrey B. Casady; MISSISSIPPI STATE UNIV MISSISSIPPI STATE CENTER FOR ADVANCED SEMICONDUCTOR PROTOTYPING
|
| SiC VJFETs are an ideal device for a number of power electronics applications, including, but not limited to, high temperature motor drives, switch modules, and DC-DC or DC-AC inverters/converters. These applications are relevant to a number of military applications, such as shipboard power systems, more electric vehicles (including hybrid vehicles), and power conditioning systems in hostile and/or high temperature environments. The SiC VJFETs combine the switching speed of Si MOSFETs ... |
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| Logic Nanocells Within 3-Terminal Ordered Arrays |
28 FEB 2007 |
58 pages |
| Authors:
James M. Tour; RICE UNIV HOUSTON TX
|
| Our overall technical approach to this project consisted of the following elements: (1) A rich set of chemistries available to form the channel of a moleware device, and considerable insight and experience into the functionality of the device and these chemistries. We have in-depth experience in attachment chemistries to both metals and semiconductors. Note that worldwide, more groups are experimenting with the chemical basis set developed in our program, than ... |
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| Evolution of the Department of Defense Millimeter and Microwave Monolithic Integrated Circuit Program |
FEB 2007 |
168 pages |
| Authors:
William C. Pittman; ARMY AVIATION AND MISSILE RESEARCH DEVELOPMENT ENG CTR REDSTONE ARSENA AL APPLIED SENSORS GUIDANCE AND ELECTRONICS DIRECTORATE
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| The Millimeter and Microwave Monolithic Integrated Circuits (MIMIC) program had its origins in the concern of the smart weapons community for the affordable production of millimeter wave missile seekers, but the broad-based applicability of the technology to radar, communications, countermeasures, and counter-countermeasures was recognized in the formulation of the program. The program was initiated in the turbulent 1980s during the period of high technology trade deficits (and the defense buildup) ... |
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| Performance Limiting Defects in SiC Based Transistors |
NOV 2006 |
5 pages |
| Authors:
P. M. Lenahan; M. S. Dautrich; C. J. Cochrane; Aivars J. Lelis; PENNSYLVANIA STATE UNIV UNIVERSITY PARK
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| We have combined very sensitive electron paramagnetic resonance measurements and electrical measurements to identify performance limiting defects in SiC based semiconductor devices. This work is relevant to the US Army because SiC based devices offer quite significant potential advantages for high power and high temperature electronics. |
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| The Present State of Amperometric Nanowire Sensors for Chemical and Biological Detection |
OCT 2006 |
48 pages |
| Authors:
M. H. Ervin; S. J. Kilpatrick; C. Lombardo; B. M. Nichols; A. C. Perrella; A. E. Wickenden; ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE
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| This report reviews the research in chemical sensing at the nanometer scale using amperometric detection focusing on publications from January 2004 to September 2005. The devices discussed fall into two categories: chemresistors and chemFETs. In either configuration, the number of carriers available in the channel, and hence the device's transconductance, changes as a function of analyte exposure. Devices based on inorganic nanowires (specifically limited to metal oxides and silicon), conductive ... |
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| Spin-Polarized Tunneling at Interfaces Between Oxides and Metals or Semiconductors |
SEP 2006 |
50 pages |
| Authors:
Douglas J. Strand; ARMY RESEARCH LAB ABERDEEN PROVING GROUND MD WEAPONS AND MATERIALS RESEARCH DIRECTORATE
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| Spin-polarized tunneling is a way to create a new type of electric current whose two driving forces are spin momenta rather than opposite charges. Much research has been done with this idea and that research has been reviewed and developed to propose an experimental program to use this new type of current to devise such electronic devices as the Datta-Das spin field-effect transistor (SFET), the magnetic bipolar transistor, the hot-electron ... |
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| A Comprehensive Approach to Phonon Control for Enhanced Device Performance |
12 JUL 2006 |
38 pages |
| Authors:
Roberto Merlin; Pallab K. Bhattacharya; James R. Mellor; Rachel Goldman; George Haddad; Robert J. Hiller; Jacob Khurgin; Ki W. Kim; Cagliyan Kurdak; Madeleine Msall; Hadis Morkoc; Theodore Norris; Kan Wang; MICHIGAN UNIV REGENTS ANN ARBOR DIV OF RESEARCH DEVELOPMENT AND ADMINISTRATION
|
| The goals of this program were to identify, develop and implement configurations in which phonons and the coupling of phonons to carriers lead to enhanced device performance. A significant component of our efforts centered on artificial semiconductor heterostructures such as quantum-wells, quantum-dots and superlattices. We considered existing devices such as quantum-heterostructure lasers and detectors and field-effect transistors as well as new concepts relying on the interaction between carriers and coherent ... |
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| Development of Nanomechanical Sensors for Breast Cancer Biomarkers |
JUN 2006 |
11 pages |
| Authors:
Shyamsunder Erramilli; BOSTON UNIV MA
|
| Nanotechnology has the potential to develop silicon-based arrays for sensing biomarkers associated with breast cancer. Until recently, breast cancer research has focused on a small number of genes or proteins as primary biomarkers. To develop patient-specific therapy, tailored for each individual, parallel detection of a large number (approximately 103-104) of biomarkers may be required. The experience of the semiconductor industry in developing large-scale integrated circuits at very low cost can ... |
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| Integrated Nanoscale Nanowire Correlated Electronic Nanosensing Technology (INNOCENT) |
JUN 2006 |
27 pages |
| Authors:
Charles M. Lieber; HARVARD COLL CAMBRIDGE MA PRESIDENT AND FELLOWS
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| Development of highly-integrated, ultra-sensitive real-time electronic sensor arrays for detection of chemical and biological threats has been carried out by exploiting the unique electronic properties and integration potential of nanowire electronic devices. Silicon nanowires have been developed and assembled into arrays of sensor elements that provide highly-robust and specific ultra-sensitive species identification while at the same time dramatically reducing false positives. Sensor modalities developed in this project are based on ... |
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| Efficient Fluorescence Based Protein Chip using Pseudo 3D Single-Walled Carbon Nanotube Film |
22 MAY 2006 |
12 pages |
| Authors:
Hee C. Choi; POHANG UNIV OF SCIENCE AND TECHNOLOGY (KOREA SOUTH) DEPT OF CHEMISTRY
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| We have achieved two types of biomolecular sensors, colorimetric protein chips and label-free electrical sensors using high yield of single-walled carbon nanotubes (SWNTs). First, pseudo 3-dimensional SWNT films coated with carbonyldiimidazole-Tween20 (CDI-Tween20) surfactant demonstrated as a facile platform for fluorescence based protein chip. Highly selective protein bindings of biotin-BSA+SA (streptavidin) and SpA (protein A)+IgG (Immunoglobulin G) pairs, as well as those of small molecules such as FLAG peptide+anti-FLAG and biotin-SA. ... |
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| Field-Effect Flow Control for 2-D and 3-D Microfluidics |
13 FEB 2006 |
21 pages |
| Authors:
Ponniah Sivanesan; CALIBRANT BIOSYSTEMS ROCKVILLE MD
|
| Report prepared for the SBIR Phase II contract titled "Field-effect flow control for 2-D and 3-D microfluidics". The SBIR Phase II project reported here proposed to develop technology for Multidimensional Separations and Mass Spectrometry in a Microfiuidic System. This system combines the field-effect flow control technology with a related microfluidic product developed at Calibrant for proteomic analysis, the MicroDisplay2D. The multidimensional separation in a microfluidic platform is designed to enable ... |
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| Plasmon Enhanced Electron Drag and Terahertz Photoconductance in a Grating-Gated Field-Effect Transistor with Two-Dimensional Electron Channel |
31 JAN 2006 |
15 pages |
| Authors:
Gregory Aizin; CITY COLL NEW YORK
|
| The specific goal for the 1st year was to develop a physical model of the interaction between THz EM radiation and 2D electron channel of the grating-gated field-effect transistor. This physical model has been developed. The model predicts and allows to calculate photo induced dc correction to the source-drain voltage measured in experiment. Calculations demonstrate that dc photovoltage has resonant peaks at plasmon frequencies. Dependence of the peak positions, shape, ... |
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| Design Techniques for Radiation Hardened Phase-Locked Loops |
23 AUG 2005 |
58 pages |
| Authors:
Anantha N. Nemmani; OREGON STATE UNIV CORVALLIS SCHOOL OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE
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| Spacecraft experience radiation in the course of their operation and all the electronic equipment on-board these vehicles has to be designed to withstand the effects of this radiation. This thesis describes the effects of total ionization dose (TID) and single-event transients (SET) in phase-locked loops -- an important circuit block for communication circuits and clock generation. The design of a digital phase-locked loop made tolerant to SET through redundancy and ... |
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| The Importance of Network Structure in High-K Dielectrics: LaAlO3, Pr2O3, and Ta2O5 |
19 AUG 2005 |
6 pages |
| Authors:
T. Busani; R. A. Devine; AIR FORCE RESEARCH LAB KIRTLAND AFB NM SPACE VEHICLES DIRECTORATE
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| Measurements of the dielectric constant of amorphous and crystalline Pr2O3 are reported. The high value -25 for the polycrystalline phase is discussed in terms or the network structure and comparison is made with heavy rare-earth oxide values. The specific cases of LaAlO1 and Ta2O5 are also discussed and the role of network structure evidenced and elucidated. A potential route to finding high kappa materials suitable for microelectronics applications is suggested. ... |
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| Novel Organic Field Effect Transistors via Nano-Modification |
JUL 2005 |
52 pages |
| Authors:
Ten-Chin Wen; Wei-Yang Chou; Tzung-Fang Guo; Yeong-Her Wang; NATIONAL CHENG KUNG UNIV TAINAN (TAIWAN) DEPT OF CHEMICAL ENGINEERING
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| In recent years, organic/polymer field-effect transistors (FETs) provide inherent advantages of low cost, large area fabrication, simple packing, and compatibility with flexible substrates. The performance of organic FETs is determined primarily by the field effect mobility of the carriers in the organic semiconductor layers and by the efficiency of injecting and extracting carriers at source and drain currents. For virtually all classes of organic semiconductors, the intrinsic carrier mobility depends ... |
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| WBGS Epitaxial Materials Development and Scale Up for RF/Microwave- Millimeter Wave Devices |
03 MAY 2005 |
9 pages |
| Authors:
M. A. Khan; G. Simin; M. Shur; R. Gaska; SOUTH CAROLINA UNIV COLUMBIA COLL OF ENGINEERING
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| The project aimed at significant improvement of the III-nitride based epitaxial materials and device design and fabrication for high-power heterostructure field-effect transistors (HFETs). The key innovative approaches implemented in this program include novel pulsed atomic layer epitaxy (PALE) technique to grow the buffer layer with low defect density, improved epitaxial uniformity in multi-wafer MOCVD reactor, growing HFET wafers with the sheet resistance below 300 Ohm/square. Design improvements include double- heterostructure ... |
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| DC and RF Characterization of Laser Annealed Metal-Gate SOI CMOS Field-Effect Transistors |
APR 2005 |
31 pages |
| Authors:
R. P. Lu; B. W. Offord; J. D. Popp; A. D. Ramirez; J. F. Rowland; S. D. Russell; SPACE AND NAVAL WARFARE SYSTEMS CENTER SAN DIEGO CA
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| The conventional polysilicon gate in a MOSFET has been replaced by an aluminum metal gate which offers higher RF performance through the reduction of gate resistance. Pulsed excimer laser annealing of the source and drain was then used to avoid conventional furnace annealing that would melt the aluminum metal gate. CMOS field-effect transistors utilizing metalgates were fabricated in SOI technology down to 0.25-micron gate lengths. The DC characteristics of devices ... |
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| Development of a Cell-Based Biosensor for Compound Detection |
DEC 2004 |
3 pages |
| Authors:
D. C. Leistritz; A. Natarajan; K. Varghese; P. Molnar; J. J. Hickman; UNIVERSITY OF CENTRAL FLORIDA ORLANDO
|
| The threat of environmental pollution, biological warfare agent dissemination, and new diseases has in recent decades increased research into high throughput cell-based biosensors (Bousse, 1996; Gross et al., 1997; Jung et al., 1998). The creation of this class of biosensors could specifically aid in the detection of hazardous bioagents and other toxins. Understanding the validity and sensitivity of these sensors should also help with determining the mechanisms of drug- and ... |
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| International van der Ziel Symposium on Quantum 1/f, 1/f Noise and Other Low Frequency Fluctuations, Mainly in GaN, Quantum or Nanometric Devices (9th) Held in Richmond, Virginia on August 2-4, 2002 |
10 FEB 2004 |
12 pages |
| Authors:
Peter H. Handel; MISSOURI UNIV-ST LOUIS
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| The "19th International van der Ziel Symposium on Quantum l/fl/f Noise and Other Low Frequency Fluctuations, mainly in GaN, Quantum or Nanometric Devices" has brought substantial progress both in fundamental quantum l/f noise theory, and in the application to GaN devices and oscillators. The new developments were obtained in the US, in Japan and in Europe, with the top specialists in this new quantum l/f field participating from 3 continents, ... |
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| Carrier Trapping and Current Collapse Mechanism in GaN Metal- Semiconductor Field-Effect Transistors |
21 JAN 2004 |
|
| Authors:
A. F. Anwar; Syed S. Islam; Richard T. Webster; AIR FORCE RESEARCH LAB HANSCOM AFB MA SENSORS DIRECTORATE
|
 | A mechanism for current collapse in GaN metal-semiconductor field- effect transistors is proposed, which assumes the existence of acceptor traps with multiple states in the band gap. Current collapse has been experimentally observed in the current-voltage characteristic after the drain voltage sweep had exceeded the threshold for impact ionization in a previous measurement. In the proposed model, electrons generated by impact ionization are captured by neutral acceptor trap states in ... |
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| Nanoscale Study of Conduction Through Carbon Nanotube Networks |
2004 |
4 pages |
| Authors:
M. Stadermann; S. J. Papadakis; M. R. Falvo; J. Novak; E. Snow; Q. Fu; J. Liu; Y. Fridman; J. J. Boland; R. Superfine; NORTH CAROLINA UNIV AT CHAPEL HILL DEPT OF CHEMISTRY
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| We present local conductance measurements of carbon nanotube networks with nanometer scale resolution and show that there are discrete drops in conductance that correspond to junctions of metallic nanotubes and semiconducting nanotubes. The anomalies of these networks compared to thin films are shown, and a new method of discerning between semiconducting and metallic single-wall carbon nanotubes is demonstrated. |
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| Investigation of Structural and Electrical Defects in GaN/AlGaN structures and MODFETs |
2004 |
24 pages |
| Authors:
Hadis Morkoc; VIRGINIA COMMONWEALTH UNIV RICHMOND
|
| In this project, main goal was to focus on MODFET structures to understand the sources of improvements and the sources of degradations. In order to reach one of the objectives, the GaN templates grown by MOCVD was followed by c-beam evaporation of Ti layer. By the means of in-situ nitridation in hydrogen and ammonia environment inside the MOCVD system this Ti layer was converted into an effective nano-network of TiN ... |
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| Analysis of Stoichiometry-Related Defects in Group III - Nitrides |
31 DEC 2003 |
60 pages |
| Authors:
Eicke R. Weber; CALIFORNIA UNIV BERKELEY
|
| Stoichiometry-related effects in various group III-nitrides and some GaAs-based materials were investigated. An essential part of this study were low-frequency (LF) noise analyses. The new LF-noise system, acquired with an AFOSR DURIP grant (no. F49620-01-1-0285) was set up and calibrated. LF-noise spectroscopy was then applied to GOI-based MESFETs (noise caused by excess arsenic-related defects) and AlGaN/GaN HEMTs (channel noise related to an early 2D/3D growth transition for high Al-containing AlGaN ... |
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| Electromechanical Coupling In Free-Standing AlGaN/GaN Planar Structures |
15 NOV 2003 |
11 pages |
| Authors:
B. Jogai; J. D. Albrecht; E. Pan; AKRON UNIV OH DEPT OF CIVIL ENGINEERING
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| The strain and electric fields present in free-standing AlGaN/GaN slabs are examined theoretically within the framework of fully coupled continuum elastic and dielectric models. Simultaneous solutions for the electric field and strain components are obtained by minimizing the electric enthalpy. We apply constraints appropriate to pseudomorphic semiconductor epitaxial layers and obtain closed-form analytic expressions that take into account the wurtzite crystal anisotropy. It is shown that in the absence of ... |
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| AlGaN/InGaN Nitride Based Modulation Doped Field Effect Transistor |
NOV 2003 |
7 pages |
| Authors:
S. M. Blair; NORTH CAROLINA STATE UNIV AT RALEIGH RESEARCH ADMINISTRATION AND SPONSORED PROGRAMS SERVICES
|
| The goal of the proposed work is to investigate the potential advantages of the InGaN channel as a host of the 2DEG and to address the material related problems facing this ternary alloy in the AlGaN/InGaN MODFET structure. The impact on addressing these materials issues on the AlGaN/InGaN MODFET device performance will be systematically investigated and compared with the corresponding GaN 2DEG. There are several issues that were investigated, that ... |
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| Trends in Nanotechnology Conference (TNT 2003) Held in Salamanca, Spain, 15-19 Sep 2003. Posters Abstracts |
SEP 2003 |
555 pages |
| Authors:
Uzi Landman; GEORGIA INST OF TECH ATLANTA SCHOOL OFPHYSICS
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| In response to the growing awareness of the importance of nanotechnology, "Trends in Nanotechnology" (TNT) has become key meeting in the nanotechnology field since it brings fresh ideas on organization, first level speakers, and an environment suitable to keep discussions, ideas exchange and enhance scientific and personal relations among participants. TNT2003 was held in large part due to the overwhelming success of earlier Nanotechnology Conferences, TNT2000, TNT2001 and TNT2002. The ... |
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| MM-Wave AlGaN/GaN HFET's |
30 MAY 2003 |
10 pages |
| Authors:
Robert J. Trew; VIRGINIA POLYTECHNIC INST AND STATE UNIV BLACKSBURG BRADLEY DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
|
| AIGaN/GaN HFET's demonstrate considerable promise for advanced RF power sources for communications and radar systems. Experimental HFET devices have produced RF output power on the order of 10-12 W/mm of gate periphery at frequencies up to X-band. However, as frequency is increased to the mm-wave region RF performance significantly degrades. There are a variety of physical effects that currently limit the high frequency performance of these devices. In particular, it ... |
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| The Effects of Plasma Induced Damage on the Channel Layers of Ion Implanted GaAs MESFETs during Reactive Ion Etching (RIE) and Plasma Ashing Processes |
03 APR 2003 |
|
| Authors:
Hokyun Ahn; Honggu Ji; Jaekyoung Mun; Min Park; Haecheon Kim; ELECTRONICS AND TELECOMMUNICATIONS RES INST TAEJON (REPUBLIC OF KOREA) WIRELESS COMM DEPT/BASIC RESEARCH LAB
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| The gate length of GaAs MESFETs is required to be shorter for higher microwave frequency applications. The side-wall process using silicon nitride is one of the effective processes to fabricate short gate length GaAs MESFETs. The side-wall process consists of deposition and anisotropic etching of silicon nitride and delivers plasma induced damages on the channel layers of the devices. In this study, the effects of plasma induced damage on the ... |
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| Materials Research Society Symposium Proceedings. Volume 743. GaN and Related Alloys - 2002 |
2003 |
861 pages |
| Authors:
Christian Wetzel; Edward T. Yu; James S. Speck; Angela Rizzi; Yasuhiko Arakawa; MATERIALS RESEARCH SOCIETY WARRENDALE PA
|
| Symposium L, "GaN and Related Alloys-2002," was held December 2-6 at the 2002 MRS Fall Meeting in Boston, Massachusetts During nine half-day oral sessions, nine invited talks and 53 contributed talks were given in three poster sessions, 161 posters were presented. This year's nitride symposium again was characterized by a wide scope of nitride related advances spanning from basic materials physics over process technology to high performance devices. Strong development ... |
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| Photoluminescence Studies of Two-Dimensional Electron Gas in Modulation Doped A1xGa1-xN/GaN Structures Grown on SI 4H-SiC by MOCVD |
JUL 2002 |
11 pages |
| Authors:
Fred Semendy; Patrick Folkes; Alfred H. Huang; Michael Wraback; ARMY RESEARCH LAB ADELPHI MD
|
| Electron devices with ever-increasing operating speed are used for applications such microwave switches or amplifiers. As the physical dimensions of these devices (e.g., field effect transistors) become smaller, thinner channel layers and higher electron concentrations are required to provide high performance operation. This is because current for faster discharge of capacitance in these microwave device structures is proportional to the carrier velocity as well as the carrier density. This requirement ... |
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| Is the Short Takeoff and Vertical Landing Aircraft the Sole Tactical Air Solution for the Marine Corps |
04-Feb-2002 |
11 pages |
| Authors:
Funderburke; M A Juenger; MARINE CORPS COMMAND AND STAFF COLL QUANTICO VA
|
| Since the beginning of Marine Corps aviation, the Marines have had several fixed wing platforms to support the Marine Air Ground Task Eorce (MACTE) . With the present combination of the E/A-18 Hornet, AV-8B Harrier and EA-EB Prowler aircraft, the MACTE air command element is capable of accomplishing a multitude of missions under almost any condition. However, the traditional way in which Marine tactical air carries out its role is ... |
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| The Electrical Effects of DNA as the Gate Electrode of MOS Transistors |
2002 |
6 pages |
| Authors:
M. W. Dashiell; A. T. Kalmbur; R. Lesson; K. J. Roe; J. F. Rabolt; DELAWARE UNIV NEWARK DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
|
| The gate conductor material affects the threshold voltage of metal-oxide- semiconductor (MOS) transistors through the influence of the electrochemical work function and electric charge. Measurements of the threshold voltage from current voltage characteristics may therefore provide a method to estimate the electronic properties of biomolecules located on the gate electrode. We have deposited DNA from the corn genome onto the gate oxide of Si nMOS transistors and measured the effects ... |
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| RF and DC Characteristics of Low-Leakage InAs/A1Sb HFETs |
2002 |
6 pages |
| Authors:
B. Brar; G. Nagy; J. Bergman; G. Sullivan; P. Powell; CALIFORNIA UNIV SANTA BARBARA
|
| InAs/AlSb HFETs with excellent RF and DC properties are reported. The drain currents are 75OmA/mm with peak transconductance gm of 1.1 S/mm. The gate leakage in is below lnA/sq.micronmeter for low gate bias. The threshold voltages of 0.25 micronmeter and 0.5 micronmeter gate-length devices are -2.5 and -1.5 V respectively, indicating short channel effects are present. Small- signal measurements on a 0.25 micronmeter gate-length device show f of 120 GHz ... |
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| Optical Properties of III-V Semiconductor Nanostructure and Quantum Wells |
2002 |
23 pages |
| Authors:
Omar Manasreh; ARKANSAS UNIV FAYETTEVILLE DEPT OF ELECTRICAL ENGINEERING
|
| The authors have investigated the interband and intersubband transitions in III-V semiconductor quantum wells and quantum dots. They also investigated intersubband transitions in III-nitride multiple quantum wells grown on a sapphire substrate, in particular, intersubband transitions in InGaAs/GaAs multiple quantum dots and GaN/AlGaN multiple quantum wells. Polarization effect on the phonon modes in GaN/AlGaN heterojunctions field effect transistors also were reported. The report contains detailed discussions of the results obtained ... |
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| CMOS Compatibility of a Micromachining Process Developed for Semiconductor Neural Probe |
25 OCT 2001 |
|
| Authors:
S. K. An; S. J. Oh; S. J. Kim; SEOUL NATIONAL UNIV (REPUBLIC OF KOREA) SCHOOL OF ELECTRICAL ENGINEERING
|
| Neural probes are made on silicon substrate using a micromachining process with low temperature steps only. A deep silicon etch ("Boschh") process was used for the probe shaping. CMOS compatibility of the process was checked and reported in this paper. Test transistor patterns generated using standard CMOS fabrication line were exposed to a post-CMOS probe making process including dielectric deposition, gold metalization and the dry etching step, while changes of ... |
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| Multiple Nanowire Gate Field Effect Transistors |
OCT 2001 |
7 pages |
| Authors:
Saleem H. Zaidi; A. K. Sharma; R. Marquardt; S. L. Lucero; P. M. Varangis; GRATINGS INC ALBUQUERQUE NM
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| Novel metal oxide semiconductor field effect transistor (MOSFET) architectures aimed at sub 1 V operation with enhanced current driving capability are reported. In our design, the planar channel region in a conventional MOSFET is replaced by an array of isolated Si wires. Directional metal coverage of the two sidewalls and the top surface of each Si wire help achieve enhanced gate control. Sub 1 V operation is achieved by reducing ... |
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| Nanostructures: Physics and Technology |
JUN 2001 |
634 pages |
| Authors:
RUSSIAN ACADEMY OF SCIENCES ST PETERSBURG IOFFE PHYSICAL- TECHNICAL INST
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| The Proceedings of the 9th International Symposium on Nanostructures: Physics and Technology (NANO200l) held in St. Petersburg, Russia on June 18-22 2001 contains papers on the following topics: Nanostructure technology, Silicon based nanostructures, Infrared phenomena in nanostructures, Wide band gap nanostructures, Microcavity and photonic crystal, Nanostructure characterization and novel atomic-scale probing techniques, Quantum wells and superlattices, Quantum wires and quantum dots, Tunneling phenomena, General properties of low dimensional structures, Spin ... |
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| Materials Processing and Device Development to Achieve Integration of Low Defect Density III Nitride Based Radio Frequency |
30 APR 2001 |
37 pages |
| Authors:
R. F. Davis; M. Harris; S. Halpern; S. Siebert; M. Patel; NORTH CAROLINA STATE UNIV AT RALEIGH
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| Gallium nitride HEMTs were successfully fabricated and tested on silicon substrates. Gallium nitride HEMTs produced on Si substrates had normal current voltage characteristics; however, the transconductance and saturation current density were low. It is believed that this is due to the fact that the GaN epi layers were not optimized on the initial wafer runs. These initial results validate that GaN HEMTs can be produced on low cost silicon substrates ... |
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| SiC Discrete Power Devices |
01 JAN 2001 |
130 pages |
| Authors:
Ravi K. Chilukuri; B. J. Baliga; NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
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| A novel planar vertical MOSFET structure, called ACCUFET, which eliminates both the problem of premature oxide breakdown and low inversion layer mobility has been demonstrated at Power Semiconductor Research Center. The contributions of the parasitic JFET regions in the ACCUFET to its forward conduction and forward blocking characteristics are discussed for the first time. A new process for fabrication of high voltage 4H-SiC ACCUFETs has been designed using insights gained. ... |
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| Nanostructures: Physics and Technology. Annual International Symposium Held in St. Petersburg, Russia; Nano2001 (CD-ROM) |
2001 |
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| Authors:
RUSSIAN ACADEMY OF SCIENCES ST PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
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| ELECTRONIC FILE CHARACTERISTICS: 68 text, hypertext, image, audio and software files; Adobe PDF, HTML, JPG, GIF, and WAV. PHYSICAL DESCRIPTION: 1 computer laser optical disc (CD-ROM); 4 3/4 in.; 99.1 MB. SYSTEMS DETAIL NOTE: MS WIndows 98/2K/ME/NT-compatible; requires Adobe Acrobat Reader (on disc). ABSTRACT: The International symposium "Nanostructures: Physics and Technology" was initiated by Prof. Zhores Alfero and Prof. Leo Esaki in 1993 and has been run annually under the ... |
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| Investigation of Critical Problems in GaN/AIGaN Modfets |
NOV 2000 |
59 pages |
| Authors:
Hadis Morkoc; VIRGINIA COMMONWEALTH UNIV RICHMOND SCHOOL OF ENGINEERING
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| MBE AlN layers have been optimized on sapphire substrates. MBE GaN layers have been optimized with ammonia and RF nitrogen sources and Ga polarity films have been consistently obtained using both ammonia and RF nitrogen. With ammonia grown GaN, excellent X-Ray diffraction (1.6 and 3.2 arcmin FWHM values for 002 and 104 diffraction peaks), and PL with only the exciton peak dominating at 10 K with 95 % radiative efficiency ... |
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