| Device Technologies for Semiconductor Spintronic Circuits |
20 Apr 2012 |
3 pages |
| Authors:
James Kolodzey; DELAWARE UNIV NEWARK DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
|
 | The goal of this project was to develop spin injection and detection techniques to enable spin transport to enhance the speed and design of CMOS VLSI circuits. Progress toward this goal over the duration of the award specifically impacts: (1) Understanding extrinsic origins of spin depolarization at interfaces and with localized impurity states; and (2) Quantifying the extent to which physical processes and boundary conditions affect spin dephasing in vertical-transport ... |
|
| Crossbar Nanocomputer Development |
Apr 2012 |
56 pages |
| Authors:
Nathaniel C Cady; STATE UNIV OF NEW YORK AT ALBANY COLL OF NANOSCALE SCIENCE AND ENGINEERING
|
| This effort expanded development of memristive nanoelectronic junction materials for high density memory and advanced logic applications. The focus of the effort was to develop metal oxide materials for resistive memory devices (RMDs), which are also known as memristors or resistive random access memory (Re-RAM or RRAM). The major goal was to fabricate such devices in a crossbar configuration (overlapping metal lines which create multiple junctions in an array format) ... |
|
| Exploration of Nanometer Cognitive Reasoning Very Large Scale integration (VLSI) Computer Architecures |
Apr 2012 |
28 pages |
| Authors:
Jr Stine James E; OKLAHOMA STATE UNIV STILLWATER SCHOOL OF ELECTRICAL AND COMPUTER ENGINEERING
|
| The objectives of this work were to design, develop, and evaluate support for the design of low-power hardware computer architectures at the Very Large Scale Integration (VLSI) level. The objectives were realized by achieving complete design flow integration with commercial and open-source Electronic Design Automation tools. The design flow takes as inputs a high-level system-level architecture description, along with area, critical path delay, and power dissipation constraints. Based on the ... |
|
| Nanotechnology Support for Memristor Nanoelectronics |
Mar 2012 |
15 pages |
| Authors:
Nathaniel C Cady; STATE UNIV OF NEW YORK AT ALBANY COLL OF NANOSCALE SCIENCE AND ENGINEERING
|
| Memristive nanoelectronic devices share many of the properties of resistors, as well as the same unit of measure (ohm). However, in contrast to ordinary resistors in which the unit of resistance is permanently fixed, memristance may be programmed or switched to different states based on the history of the voltage applied to the memristance nanomaterial. This project was a unique collaboration between researchers at the College of Nanoscale Science & ... |
|
| Development of Chip-Based Frequency Combs for Spectral and Timing Applications |
Dec 2011 |
25 pages |
| Authors:
Yoshi Okawachi; CORNELL UNIV ITHACA NY
|
| This report describes research results in developing the technology for the generation of a broadband parametric frequency combs with flexible operating wavelengths and comb spacing. The research showed the flexibility in operating wavelengths with demonstration of comb generation with a 1-mm pump. Technology was further developed at 1.5 mm and showed that with appropriate waveguide engineering, the comb can span an octave of bandwidth, which is crucial for self-stabilization. Additionally, ... |
|
| Advanced Relay Design and Technology for Energy-Efficient Electronics |
07 Jul 2011 |
96 pages |
| Authors:
Jaeseok Jeon; CALIFORNIA UNIV BERKELEY DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE
|
| As the era of traditional Complementary-Metal-Oxide-Semiconductor (CMOS) technology scaling is coming to an end, continual improvements in integrated-circuit (IC) performance and cost per function are becoming difficult to achieve without increasing power density. This necessitates the investigation of alternate device technologies that surmount the fundamental CMOS energy-efficiency limit and hence enable ultra-low-power ICs. To that end, a nanoelectro- mechanical (NEM) relay technology is promising, because of its immeasurably low offstate ... |
|
| 1.5 Micron Photonic Devices Based on III-nitrides Grown on Si Substrates |
03 APR 2011 |
10 pages |
| Authors:
Jing Li; III-N TECHNOLOGY INC LUBBOCK TX
|
| Report developed under topic #A10AT015, contract W911NF-10-C-0073. Our goal is to provide the technology base for realizing monolithic emitters and optical amplifiers active at 1.5 micron on Si substrates that are compatible with standard processes of the complementary metal-oxide-semiconductor (CMOS) technology. Our approach is to exploit epitaxial growth of III-nitride semiconductors on Si substrate and in-situ erbium (Er) doping of III-nitrides. During the Phase I supporting period, 3N has demonstrated ... |
|
| Silicon-nanocrystal Optoelectronic Kerr Effect for Complementary Metal-oxide Semiconductor (CMOS) Compatible Optical Switching |
APR 2011 |
18 pages |
| Authors:
Neal K. Bambba; Justin R. Bickford; Stefan F. Preble; ARMY RESEARCH LAB ABERDEEN PROVING GROUND MD
|
| There is a broad Army need to quickly transfer large amounts of data from sensors to processors on a wide variety of systems. Complementary metal-oxide semiconductor (CMOS) compatible optical intra-chip data communication systems would enable this data flow by increasing data rates and reducing circuit size and power. We investigated the fabrication of a monolithic CMOS-compatible optoelectronic silicon (Si) modulator for intra-chip communication. The modulator is designed to take advantage ... |
|
| Picosecond Response Times in GaAs/AlGaAs Core/Shell Nanowire-Based Photodetectors |
Jan 2011 |
4 pages |
| Authors:
Eric M Gallo; Guannan Chen; Marc Currie; Terrence McGuckin; Paola Prete; Nico Lovergine; Bahram Nabet; Jonathan E Spanier; DREXEL UNIV PHILADELPHIA PA DEPT OF MATERIALS SCIENCE AND ENGINEERING
|
| High-speed metal-semiconductor-metal (MSM) photodetectors based on Schottky-contacted core/shell GaAs/AlGaAs and bare GaAs nanowires were fabricated and characterized. The measured core/shell temporal response has a 10 ps full-width at half-maximum and an estimated corrected value less than 5 ps. The bare GaAs devices exhibit a slower response (35 ps) along with a slowdecaying persistent photocurrent (80 s). The core/shell devices exhibit significantly improved dcand high-speed performance over bare nanowires and comparable ... |
|
| High kappa Dielectrics on InGaAs and GaN: Growth, Interfacial Structural Studies, and Surface Fermi Level Unpinning |
24 DEC 2010 |
14 pages |
| Authors:
Minghwei Hong; J. R. Kwo; NATIONAL TSING HUA UNIV HSINCHU (TAIWAN) DEPT OF MATERIALS SCIENCE AND ENGINEERING
|
| This is the report of a project to grow high dielectric constant oxides on InGaAs and GaN using molecular beam epitaxy and atomic layer deposition. |
|
| Fundamental Problems of Hybrid CMOS/Nanodevice Circuits |
14 Dec 2010 |
4 pages |
| Authors:
Konstantin K Likharev; James Lukens; STATE UNIV OF NEW YORK AT STONY BROOK
|
| This project was focused on key fundamental issues of future hybrid CMOS/nanodevice circuits: (i) optimization of metal-oxide devices with resistive bistability, and (ii) design and simulation of single-electron molecular latching switches. The report describes the significant progress made in both directions, including - fabrication of bistable TiOx devices with yield up to 70% and endurance up to 103 cycles, - design and characterization of single-electron molecular latching switches, and - ... |
|
| Fundamental Problems of Hybrid CMOS/Nanodevice Circuits |
14 Dec 2010 |
4 pages |
| Authors:
Konstantin K Likharev; James Lukens; STATE UNIV OF NEW YORK AT STONY BROOK
|
| This project was focused on key fundamental issues of future hybrid CMOS/nanodevice circuits: (i) optimization of metal-oxide devices with resistive bistability, and (ii) design and simulation of single-electron molecular latching switches. The report describes the significant progress made in both directions, including fabrication of bistable TiOx devices with yield up to 70% and endurance up to 103 cycles, design and characterization of single-electron molecular latching switches, and design and fabrication ... |
|
| RF Communication Subsystem Integration Research |
15 OCT 2010 |
86 pages |
| Authors:
Joe E. Brewer; Kenneth K. O; FLORIDA UNIV GAINESVILLE OFFICE OF RESEARCH
|
| The feasibility of integrating RF communication subsystems into system-on-a-chip devices to form covert sensor networks was investigated. The research vision and vehicle was an M&M(trademark) candy-sized, low power, affordable (a few dollars) CMOS micronode device. The goals were to investigate approaches for realization of small on-chip antenna, define circuity and techniques for wireless activation of a micronode device before deployment, and define low power circuitry for key functional blocks within ... |
|
| Wave Chaos and HPM Effects on Electronic Systems |
12 Oct 2010 |
8 pages |
| Authors:
Jr Antonsen Thomas M; Edward Ott; John Rodgers; Steven M Anlage; MARYLAND UNIV COLLEGE PARK
|
| During the reporting period we successfully applied our Random coupling model to the study of three problems relevant to wave propagation and scattering in complicated environments. We studied the sensitivity of the reconstruction of time reversed signals to changes in the local environment. We formulated a universal model for the behavior of the time domain response of a complicated cavity to a pulse of electromagnetic energy. We elucidated the competition ... |
|
| Novel Memory Structure for 4 K Operation with Interfacing to Josephson Digital Circuits |
16 AUG 2010 |
10 pages |
| Authors:
Theodore Van Duzer; CALIFORNIA UNIV BERKELEY
|
| The research under this grant is a part of the realization of a hybrid Josephson-CMOS memory which will operate at 4 K and will provide the random access memory needed for digital computation by the ultra-high speed superconducting logic circuits. Standard CMOS circuits work about 40% faster at 4 K than at room temperature and are far denser than superconducting circuits so a large amount of memory can be made ... |
|
| MeHG Stimulates Antiapoptotic Signaling in Stem Cells |
JUL 2010 |
29 pages |
| Authors:
Joseph Bressler; KENNEDY KRIEGER INST INC BALTIMORE MD HOGO W. MOSER RESEARCH INST
|
| In the developing brain, the dominant type of neuronal cell death is apoptosis whereas neurons more frequently die through necrosis in the adult brain. Tightly controlled apoptotic mechanisms are essential for the correct pruning and formation of synaptic connections during development 1; it is thought that these already active death pathways may be responsible for the increased vulnerability of the immature brain to insults 2. The neurons that have failed ... |
|
| Dense Heterogeneous Integration for InP Bi-CMOS Technology |
May 2009 |
7 pages |
| Authors:
Y Royter; P R Patterson; J C Li; K R Elliiott; T Hussain; M F Boag-O'Brien; J R Duvall; M C Montes; D A Hitko; J S Sewell; AIR FORCE RESEARCH LAB WRIGHT-PATTERSON AFB OH
|
| InP Bi-CMOS technology capable of wafer-scale device-level heterogeneous integration (HI) of InP HBTs and CMOS has been developed. With this technology, full simultaneous utilization of III-V device speed and CMOS circuit complexity is possible. Simple ICs and test structures have been fabricated, showing no significant CMOS or HBT degradation and high heterogeneous interconnect yield. The heterogeneously integrated differential amplifiers with record performance and HBTs with fT=400GHz were obtained. Thermal vias ... |
|
| Flip Chip Bonding of 68 x 68 MWIR LED Arrays |
Jan-2009 |
6 pages |
| Authors:
Naresh C Das; Monica Taysing-Lara; Kimberley A Olver; Fouad Kiamilev; J P Prineas; J T Olesberg; E J Koerperick; L M Murray; Tom F Boggess; ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE
|
| The flip chip bonding process is optimized by varying the bonding pressure, temperature, and time. The 68 68 mid wave infrared (MWIR) LED array was hybridized onto Si-CMOS driver array with same number of pixels. Each pixel has two indium bumps, one for cathode and another for anode. Both LED array and CMOS drivers have 15- m-square Indium bump contact pads. We used Karl Suss FC150 flip chip machine for ... |
|
| Initial Laboratory and Sky Testing Results for the Second Generation H4RG-10 4k x 4k, 10 Micron Visible CMOS-Hybrid Detector |
2009 |
11 pages |
| Authors:
Bryan N. Dorland; Rachel P. Dudik; Dan Veillette; Ryan Swindle; Augustyn Waczynski; Emily Kan; NAVAL OBSERVATORY WASHINGTON DC
|
| We present the initial performance test results for the H4RG-10 (A2), the second generation of the H4RG-10 visible CMOS-Hybrid Sensor Chip Assembly (SCA). The first science grade H4RG-10 (A2), delivered in 2009, is an evolution of the first generation A1, first delivered and tested in 2007. The H4RG-10 is primarily intended for ground- and space-based astronomical applications. Our evaluation focused on the performance parameters as they are related to astrometric ... |
|
| Threshold Voltage Instability in A-Si:H TFTS and the Implications for Flexible Displays and Circuits |
Dec-2008 |
9 pages |
| Authors:
D Allee; E Forsythe; G Raupp; K Baugh; E Bawolek; Z Li; N Darbanian; S Venugopal; R Shringarpure; L Clark; D Morton; ARIZONA STATE UNIV TEMPE
|
| After a brief review of the characteristics of electrical stress degradation of flexible, amorphous silicon thin film transistors, the implications for various types of flexible circuitry including active matrix backplanes, integrated drivers and general purpose digital circuitry are examined. A circuit modeling tool that enables the prediction of complex circuit degradation is presented. Experimental results for a variety of flexible digital circuits including programmable logic arrays and memories are presented. ... |
|
| Silicon Plasmonic Waveguides for the Infrared and Terahertz Regions |
Jan-2008 |
4 pages |
| Authors:
Richard Soref; Robert E Peale; Walter Buchwald; Justin Cleary; AIR FORCE RESEARCH LAB HANSCOM AFB MA OPTOELECTRONIC TECHNOLOGY BRANCH
|
| Silicon-based plasmonic waveguides are proposed and studied theoretically. A silicon core, silicide underlay. and metal overlay yield propagation losses estimated to be less than 15 cm(exp -1) over the 50 um to 1000 um wavelength range. |
|
| Energy and Power Aware Computing Through Management of Computational Entropy |
JAN 2008 |
60 pages |
| Authors:
Krishna V. Palem; Mark Richards; GEORGIA INST OF TECH ATLANTA SCHOOL OF ELECTRICAL AND COMPUTER ENGINEERING
|
| With the increasing importance of computing in portable and other embedded settings, the power and energy consumed by computation has become an important consideration driving research in computer engineering and science. Historically, the study of power and energy have roots in the field of thermodynamics. The innovations that we propose in this work aim to develop a mechanism for designing algorithms that are power (energy) aware by directly working with ... |
|
| Realization and Application of a 111 Million Pixel Backside-Illuminated Detector and Camera |
21-Sep-2007 |
9 pages |
| Authors:
Norbert Zacharias; Bryan Dorland; Richard Bredthauer; Kasey Boggs; Greg Bredthauer; Mike Lesser; NAVAL OBSERVATORY WASHINGTON DC
|
| A full-wafer, 10,580 x 10,560 pixel (95 x 95 mm) CCD was designed and tested at Semiconductor Technology Associates (STA) with 9 um square pixels and 16 outputs. The chip was successfully fabricated in 2006 at DALSA and some performance results are presented here. This program was funded by the Office of Naval Research through a Small Business Innovation in Research (SBIR) program requested by the U.S. Naval Observatory for ... |
|
| Temperature Stabilization for Negative Bias Temperature Instability |
SEP 2007 |
79 pages |
| Authors:
Brian K. Harbison; NAVAL POSTGRADUATE SCHOOL MONTEREY CA
|
| Previous research was conducted on a Complementary Metal Oxide Semiconductor (CMOS) to determine the impact of a phenomenon known as Negative Bias Temperature Instability (NBTI). NBTI affects the operational characteristics of these devices, with a stronger effect on p-channel devices. This instability is apparent when the semiconductor is on biased, and exacerbated under thermal stress. This data is useful in determining the projected failure rate of certain submicron technologies. The ... |
|
| Future Directions for Microsystems Technology (BRIEFING CHARTS) |
07-Mar-2007 |
38 pages |
| Authors:
John C Zolper; DEFENSE ADVANCED RESEARCH PROJECTS AGENCY ARLINGTON VA MICROSYSTEMS TECHNOLOGY OFFICE
|
|
| A 4-Mbit Non-Volatile Chalcogenide-Random Access Memory Designed for Space Applications (Preprint) |
29 JAN 2007 |
9 pages |
| Authors:
Bin Li; Adam Bumgarner; Daniel Pirkl; James Stobie; Wayne Neiderer; Michael Granziano; Laura Burcin; Thomas Storey; Brian Orlowsky; Kenneth K. Hunt; BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS MANASSAS VA
|
| A 4Mbit non-volatile Chalcogenide-Random Access Memory (C-RAM)(tm) has been designed and fabricated in RH25, a radiation hardened CMOS technology. The top-down design focused on accommodating chalcogenide process variations and satisfying space system specifications. The optimized band-gap circuit supplies reference current and voltage that meet temperature and voltage requirements. The innovative write circuitry supplies appropriate currents (amplitude and shape) to the chalcogenide memory cells to allow them to be programmed either ... |
|
| Three Dimensional Integration and On-Wafer Packaging for Heterogeneous Wafer-Scale Circuit Architectures |
NOV 2006 |
35 pages |
| Authors:
Linda Katehi; Barry Perlman; William Chappell; Saeed Mohammadi; Michael Steer; PURDUE UNIV LAFAYETTE IN
|
| Advanced Network Centric Warfare (NCW) systems require a new generation of circuits with deployable, agile, versatile, lethal, survivable and sustainable capabilities. The super-heterodyne radio architecture in present systems necessitates multiple passive off-chip components including IF filters adapted to the channel filtering requirements to support different standards. A newer direct conversion (including low IF) architecture has evolved that lends itself to a single- or few-chip mixed signal implementation although performance is ... |
|
| High-Performance Digital Imaging System for Development and Characterization of Novel Materials and Processes |
08 AUG 2006 |
26 pages |
| Authors:
Y. Dzenis; R. Feng; NEBRASKA UNIV LINCOLN
|
| The objective of this DURIP project was to acquire a new high-performance digital imaging system for visualization and quantitative characterization of high-speed dynamic fracture in advanced composite materials and flow instabilities in nanomanufacturing processes. Full-field dynamic stress analysis of fracture required high spatial resolution while ballistic processes needed ultrahigh-speed imaging. Observations of jet motion and instabilities in nanofiber manufacturing required flexible frame rate and long time (high frame number) videography. ... |
|
| Diffusion Model of Nonlinear HPM Effects in Advanced Electronics |
Jul-2006 |
32 pages |
| Authors:
John Rodgers; Todd Firestone; Victor Granatstein; Steven Anlage; Renato de Moraes; MARYLAND UNIV COLLEGE PARK INST FOR RESEARCH IN ELECTRONICS AND APPLIED PHYSICS
|
| Briefing looks at the effects of high powered microwaves at both the level of electronic networks and at the circuit level. These are characterized by a model. |
|
| Negative Bias Temperature Instability (NBTI) Experiment |
JUN 2006 |
75 pages |
| Authors:
Christopher M. Schuster; NAVAL POSTGRADUATE SCHOOL MONTEREY CA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
|
| The phenomenon known as Negative Bias Temperature Instability (NBTI) impacts the operational characteristics of Complementary Metal Oxide Semiconductor (CMOS) devices, and tends to have a stronger effect on p-channel devices. This instability is observed with an applied "on" biasing during normal operation and can be accelerated with thermal stress. A normal applied electrical bias on CMOS transistors can lead to the generation of interface states at the junction of the ... |
|
| A Quantum Dot Optical Modulator for Integration With Si CMOS |
01 AUG 2005 |
6 pages |
| Authors:
Y. H. Xie; CALIFORNIA UNIV LOS ANGELES DEPT OF MATERIALS SCIENCE AND ENGINEERING
|
| During the period covered by this report, we have successfully overcome several technical challenges for the device fabrication and made solid progress heading toward a functional optical modulator of 635 nm working wavelength. This is the wavelength of the commercially available DVD lasers. The key challenge for us is the insufficient thickness control in spin-coating in the university fabrication laboratory like ours. As will be shown in the report, the ... |
|
| Development of a CMOS Snapshot Active Pixel Sensor for Spaceborne Earth Observation Applications |
13 JUL 2005 |
12 pages |
| Authors:
Alex Materne; Christian Buil; CENTRE NATIONAL D'ETUDES SPATIALES TOULOUSE (FRANCE)
|
| For metric resolutions earth observation missions - in the visible spectrum - CMOS Active Pixel Sensors (APS) may be a competitive alternative to 2D array CCD thanks to the high readout frequencies and to the shutter capability offered by the snapshot mode. In order to evaluate the interest of CMOS APS for those missions, CNES has launched the development of a CMOS snapshot APS demonstrator. Although a multi-mission capability is ... |
|
| Microfluidic Integration on Detector Array for Absorption and Fluorescence Micro-Spectrometers |
01 JUN 2005 |
8 pages |
| Authors:
Mark L. Adam; Markus Enzelberger; Stephen Quake; Axel Scherer; CALIFORNIA INST OF TECH PASADENA DEPT OF ELECTRICAL ENGINEERING
|
| We describe a new approach for miniaturizing spectrometers by combining replica molded elastomeric micro-channels with filtered silicon detector arrays. Elastomers are excellent transparent materials, which provide hermetic seals to silicon dioxide and allow sensitive absorption and fluorescent spectroscopy in the visible and near-UV wavelength range. When integrated on dense detector arrays, such spectroscopy can be conducted on picoliter sample volumes. Elastomeric fluidic systems also permit easy integration of spectroscopic measurements ... |
|
| Scaling Prospects for Ultimate Nanotransistors |
31 MAY 2005 |
12 pages |
| Authors:
Konstantin K. Likharev; STATE UNIV OF NEW YORK RESEARCH FOUNDATION AT STONY BROOK OFFICE OF SPONSOREDPROGRAMS
|
| Advanced semiconductor field-effect transistors (FET), scaled into the sub-10-nm gate length range, are sometimes considered the main candidates for future nanoelectronics, even beyond the long-term horizon of the International Technology Roadmap for Semiconductors. In this project, the long- term prospects of FET scaling were evaluated in greater detail than ever before. In particular, the authors have calculated the source-drain I-V curves, subthreshold characteristics, voltage gain, and power consumption of sub-10-nm, ... |
|
| Application-Specific Integrated-Microelectromechanical Systems (MEMS) process Services (ASIMPS) |
APR 2005 |
69 pages |
| Authors:
Gary K. Fedder; Kaigham J. Gabriel; Mary A. Maher; Tamal Mukherjee; CARNEGIE-MELLON UNIV PITTSBURGH PA
|
| The primary goal of this project was to develop the technology for an application-specific integrated microelectromechanical systems (MEMS) process service, called ASIMPS. Multiple government, industry and academic institutions participated in seven integrated MEMS process runs. Layout rules, design practices and tutorials for integrated MEMS were generated. Microelectromechanical structures were made from the interconnect layers within commercial foundry integrated circuit processes. The post-foundry micromachining process comprised dry etching of the dielectric ... |
|
| Uncooled Infrared Detector Arrays With Electrostatically Levitated Sensing Elements |
28 MAR 2005 |
16 pages |
| Authors:
T. Blalock; M. Reed; VIRGINIA UNIV CHARLOTTESVILLE OFFICE OF SPONSORED PROGRAMS
|
| The goals of this project were to develop the technologies necessary to implement a new, non-contacting infrared sensing element. As described in our proposal, the sensing element is to be suspended in tension with electrostatic forces within a pixel cavity. The creation of this structure has required the development of a number of MEMS fabrication techniques. We have also developed new circuit topologies to the novel sensing structure. |
|
| An Overview of the Common Component Architecture |
FEB 2005 |
10 pages |
| Authors:
Rob Armstrong; Teresa H. Ko; David E. Bernholdt; SANDIA NATIONAL LABS LIVERMORE CA
|
| As the commercial software industry burgeoned, it was clear that increasingly complex software would require a mechanism scaling across people, geography and time. The answer came in the concept of software components. Software components are stand-alone modules that have a prescribed means for composition into an application. Component concepts enable, for example, MS Word documents to appear in MS Powerpoint slides, and has led to the point-and-click user interfaces that ... |
|
| Electrostatically Actuated Resonant Microcantilever Beam in CMOS Technology for the Detection of Chemical Weapons |
Jan-2005 |
8 pages |
| Authors:
Ioana Voiculescu; Mona E Zaghloul; R A McGill; Eric J Houser; Gary K Fedder; GEORGE WASHINGTON UNIV WASHINGTON DC DEPT OF MECHANICAL AND AEROSPACE ENGINEERING
|
|
| Boost Logic: A High Speed Energy Recovery Circuit Family |
2005 |
16 pages |
| Authors:
MICHIGAN UNIV ANN ARBOR DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE
|
| In this paper, we propose Boost Logic, a logic family which relies on voltage scaling, gate overdrive and energy recovery techniques to achieve high energy efficiency at frequencies in the GHz range. The key feature of our design is the use of an energy recovering boost stage to provide an efficient gate overdrive to a highly voltage scaled logic at near threshold supply voltage. We have evaluated our logic family ... |
|
| Banquet Talk: Area-Time-Power Tradeoffs in Computer Design: The Road Ahead |
30 SEP 2004 |
34 pages |
| Authors:
Michael J. Flynn; STANFORD UNIV CA
|
| SUMMARY: Embedded processors are the major growth area with obvious challenges: 1) 10x speed without increasing power; 2) 10 to the minus 6th less power with the same speed; 100x circuit complexity with same design effort. Beyond this the real challenge is in system design: new system concepts, interconnect technologies, IP management and design tools. |
|
| Three-Dimensional Structure of Turbulent Scalar Fields with Applications in Aerooptics |
12 APR 2004 |
19 pages |
| Authors:
Paul E. Dimotakis; Christopher Martin; CALIFORNIA INST OF TECH PASADENA GRADUATE AERONAUTICAL LABS
|
| This program aimed to develop an interferometric technique for mitigating the effects of turbulence on visible-light imaging, complementary to techniques such as Adaptive Optics (AO) or speckle imaging. This technique employs a rotation shearing interferometer and high-speed, low-noise digital imaging system. Where an AO system would employ a complex high-bandwidth, electro-mechanical system to mitigate the effects of turbulence, this interferometric technique relies on a novel (low-cost) optical design, high- speed ... |
|
| Military/Civilian Mixed-Mode Global Positioning System (GPS) Receiver (MMGR) |
MAR 2004 |
|
| Authors:
Andy Peczalski; Jeff Kriz; Stephen G. Carlson; Steven J. Sampson; HONEYWELL AEROSPACE ELECTRONIC SYSTEMS PLYMOUTH MN
|
 | This paper describes plans and progress made on the MMGR program funded jointly by Air Force Research Laboratory (AFRL) GPS Joint Program Office (JPO) and industry that started in April 2003. The AFRL Dual Use Science and Technology (DUS&T) MMGR objective of meeting pervasive defense system requirements and civilian needs for ultra-small GPS receiver technology is dependent in part upon the creation of multi- L-band reconfigurable receiver integrated circuitry that ... |
|
| Adaptive Compensation of Atmospheric Turbulence in Ground-to-Ground Laser Communication Systems |
DEC 2003 |
54 pages |
| Authors:
Frederic M. Davidson; JOHNS HOPKINS UNIV BALTIMORE MD DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
|
| Two silicon based devices were investigated for use as an optical wave-front sensor to provide error signal inputs to an adaptive optic wave-front control system intended to reduce the effects of atmospheric turbulence in ground-to-ground laser communication systems. One device was an active sensor array fabricated in CMOS. The other was a silicon photoconductive optical detector with surface electrodes expected to produce PEMF photocurrents in response to spatial motion of ... |
|
| Low-Energy VLSI Circuit Architectures |
07 JUL 2003 |
20 pages |
| Authors:
Marios C. Papaefthymiou; MICHIGAN UNIV ANN ARBOR DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE
|
| This project has investigated novel circuit architectures for low- energy VLSI systems. Its primary focus has been on charge-recovering (a.k.a. adiabatic) circuits. By steering currents across devices with low voltage drops and by recycling undissipated energy, these circuits can operate more efficiently than their conventional digital counterparts. Early investigations into adiabatic circuits have yielded very complex designs that are impractical for high-speed design. This project has led to the discovery ... |
|
| An Extremely Sensitive PZT-based MEMS Magnetometer for Use as an Orientation Sensor |
JUN 2003 |
53 pages |
| Authors:
Dennis K. Wickenden; JOHNS HOPKINS UNIV LAUREL MD APPLIED PHYSICS LAB
|
| The objective of this project was to develop a sensitive MEMS-based magnetometer for use as an orientation sensor on spinning projectiles. The magnetometer was derived from the JHU/APL resonating xylophone bar with sensitivity linearly proportional to the drive current, mechanical Q at resonance, and the magnetic field. Polysilicon magnetometers demonstrated the size effects expected for such devices. Their sensitivity was limited by the relatively high sheet resistivity that restricted the ... |
|
| VHDL Modeling and Simulation of a Digital Image Synthesizer for Countering ISAR |
JUN 2003 |
164 pages |
| Authors:
Oezkan Kantemir; NAVAL POSTGRADUATE SCHOOL MONTEREY CA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
|
| This thesis discusses VHDL modeling and simulation of a full custom Application Specific Integrated Circuit (ASIC) for a Digital Image Synthesizer (DIS). The DIS synthesizes the characteristic echo signature of a pre-selected target. It is mainly used against Inverse Synthetic Aperture Radars as an electronic counter measure. The VHDL description of the DIS architecture was exported from Tanner S-Edit, modified, and simulated in Aldec Active HDL(TM), Simulation results were compared ... |
|
| Development, Exploitation, and Transition of Computer Aided Engineering (CAE) Tools |
JUN 2003 |
356 pages |
| Authors:
Harold W. Carter; CINCINNATI UNIV OH DEPT OF ELECTRICAL AND COMPUTER ENGINEERING AND COMPUTER SCIENCE
|
| This report documents research results from 22 tasks related to microelectronic modeling and software design aids conducted by researchers at six universities in Ohio and Michigan. Tasks include CMOS-based microwave component design and fabrication, parallel and mixed-signal VHDL and VBHDL-AMS simulator algorithms, conversion tools for VHDL-AMS models, System-on-a-Chip methods, VHDL-AMS modeling of operational amplifiers, mechatronic component design analysis, video/audio data compression using wavelets, and design methods for mixed analog/digital circuits. ... |
|
| Correlation of Optical Image Sensor Noise in Space with Trapped Proton Flux |
15 MAY 2003 |
13 pages |
| Authors:
A. Campbell; J. Wehlburg; P. Marshall; B. Blake; J. Fennell; AEROSPACE CORP EL SEGUNDO CA LAB OPERATIONS
|
| MPTB particle environment measurements are being correlated with noise signals in a CMOS visible sensor to model interactions of particles and pixel sensor elements. |
|
| SiGe HBT BiCMOS for 2-160 Gb/s Next Generation Internet (NGI) |
MAY 2003 |
92 pages |
| Authors:
John F. McDonald; RENSSELAER POLYTECHNIC INST TROY NY CENTER FOR INTEGRATED ELECTRONICS
|
| This Final Report describes the research related to high speed serial communication circuits implemented in SiGe HBT technology at Rensselaer Polytechnic Institute. Serializer/ Deserializer (SERDES) circuits are crucial in keeping pace with the rapidly advancing needs for high-speed data transmission in both short distance and long distance scenarios. Research was undertaken to make better use of existing long-haul infrastructure such as fiber optic networks, as well as for improving communication ... |
|
| Astrometric Positions and Proper Motions of 19 Radio Stars |
18 MAR 2003 |
21 pages |
| Authors:
D. A. Boboltz; A. L. Fey; K. J. Johnston; M. J. Claussen; C. De Vegt; NAVAL OBSERVATORY WASHINGTON DC
|
| We have used the Very Large Army linked with the Pie Town Very Long Baseline Array antenna to determine astrometric positions of 19 radio stars in the International Celestial Reference Frame (ICRF). The positions of these stars were directly linked to the positions of distant quasars though phase referencing observations. The positions of the ICRF quasars are known to 0.25 mas thus providing an absolute reference at the angular resolution ... |
|
Reports by Keyword(s)
COMPLEMENTARY METAL OXIDE SEMICONDUCTORS
