| Hazards of Hypervelocity Impacts on Spacecraft |
FEB 2002 |
|
| Authors:
Shu T. Lai; Edmond Murad; William J. McNeil; AIR FORCE RESEARCH LAB HANSCOM AFB MA SPACE VEHICLES DIRECTORATE
|
 | Hypervelocity impacts by space particles, such as meteoroids and debris, pose hazards to spacecraft. The limits of velocity of meteoroid and debris are derived. Characteristic properties of hypervelocity impacts are momentum transfer, penetration, plasma production, localization, and suddenness. Using McDonnell's empirical formulas derived from laboratory experiments, impact penetrations and plasma production rates in the space environment are calculated. When the critical temperature theorem for Maxwellian space plasmas is used, the ... |
|
| A1GaAsSb-InGaAsSb-GaSb Epitaxial Heterostructures for Uncooled Infrared Detectors |
2002 |
10 pages |
| Authors:
Oleg V. Sulima; Sarbajit Datta; Jeff A. Cox; Michael G. Mauk; Sir B. Rafol; DELAWARE UNIV NEWARK DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
|
 | Lattice matched n-type AlGaAsSb-InGaAsSb-GaSb heterostructures for uncooled infrared detectors including separate absorption and multiplication avalanche photodiodes (SAM-APD) as well as low-voltage InGaAsSb APDs were grown using inexpensive liquid phase epitaxy. Formation of the pn-junction was performed through difflision of Zn from the vapor phase. Responsivity at lamba =2 micronmeter as high as 3.5 A/W was achieved in InGaAsSb APD biased at 8 V with the avalanche multiplication starting at 6 ... |
|
| Engineering Foundation Conference, Advanced Heterostructure Transistors V, Held in Kona, Hawaii on November 29-December 4, 1992 |
DEC 92 |
22 pages |
| Authors:
ENGINEERING FOUNDATION NEW YORK
|
| The session on Heterostructure FETs concentrated on power devices. L. Eastman of Cornell University reported 5 W at 4 GHz with 70% efficiency and 15 dB of gain from a GE device, and 1 W at 4 GHz with 80% efficiency from Raytheon. J. Wolter described avalanche breakdown via DX centers in AlGaAs, and theoretical optimization of deep submicron HFETs for power handling was reported by M. Das. Silicon-germanium HBTs ... |
|
| An Investigation of Laser Induced Surface Damage in glass |
JUN 85 |
|
| Authors:
R. D. Uyak; NAVAL POSTGRADUATE SCHOOL MONTEREY CA
|
| Laser-induced plasma surface damage in a transparent dielectric is investigated. The possible occurrence of unipolar arcing as a damage mechanism in non-conductors is examined. Experiments were conducted using a neodymium glass laser in a Q-switched mode to create a hot plasma. The plasma damage on both entrance and exit surfaces was examined. The morphology of damage is qualitatively analyzed. Several theories are applied in explanation of the damage obtained. The ... |
|
| Novel Transport and Recombination Processes in Semiconductors |
MAR 1984 |
|
| Authors:
M. Pepper; CAMBRIDGE UNIV (ENGLAND) CAVENDISH LAB
|
| This report describes our work on spin dependent recombination to date and contains copies of preprints and reprints of our work on two dimensional transport. Our work on spin effects has succeeded in identifying both spin dependent generation and recombination. The obtained structure is described and it is shown that damage produced by avalanche injection of holes gives rise to an SDR signal. The major feature of our work on ... |
|
| Process Variable Dependence and Interrelationship between Avalanche Charge Injection and Radiation Induced Carrier Trapping in Thermal Oxides |
APR 1982 |
|
| Authors:
R. R. Razouk; B. E. Deal; S. L. Pressacco; FAIRCHILD CAMERA AND INSTRUMENT CORP PALO ALTO CALIF RESEARCH AND DEVELOPMENT LAB
|
| The primary objective of this program is the investigation of the effects of processing variables on the trapping characteristics of injected charge carriers in thermal silicon dioxide. In addition, the nature and process dependence of avalanche injected trapped charges will be compared to those produced by ionizing radiation in identical oxides. The results obtained from this program should help in the determination of optimum process conditions for minimizing hot carrier ... |
|
Reports by Keyword(s)
AVALANCHE EFFECT(ELECTRONICS)
