| Epitaxial Hybrid Silicon Technology |
Aug 2011 |
25 pages |
| Authors:
J E Bowers; Christopher Palmstrom; Philip A Mages; Brian D Schultz; M J Heck; CALIFORNIA UNIV SANTA BARBARA
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 | We have investigated a wide range of conditions for MOCVD epitaxial layer overgrowth, and studies the impact on coalescence on the ELO patterns and orientations. We have found conditions that allow us to grow such that the coalesced regions are defect free. This is a first for MOCVD and it is the first for growth across a significantly wide field. The fundamental nucleation and growth of As and Sb based ... |
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| Comparison of Quantum Dots-in-a-Double-Well and Quantum Dots-in-a-Well Focal Plane Arrays in the Long-Wave Infrared |
Jul 2011 |
8 pages |
| Authors:
Jonathan R Andrews; Sergio R Restaino; Scott W Teare; Yagya D Sharma; Woo-Yong Jang; Thomas E Vandervelde; Jay S Brown; Axel Reisinger; Mani Sundaram; Sanjay Krishna; NAVAL RESEARCH LAB KIRTLAND AFB NM REMOTE SENSING DIV
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| Our previous research has reported on the development of the first generation of quantum dots-in-a-well (DWELL) focal plane arrays (FPAs), which are based on InAs quantum dots (QDs) embedded in an InGaAs well having GaAs barriers which have demonstrated spectral tunability via an externally applied bias voltage. More recently, technologies in DWELL devices have been further advanced by embedding InAs QDs in InGaAs and GaAs double wells with AlGaAs barriers, ... |
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| Experimental Determination of Quantum and Centroid Capacitance in Arsenide-Antimonide Quantum-Well MOSFETs Incorporating Nonparabolicity Effect |
May 2011 |
8 pages |
| Authors:
Ashkar Ali; Himanshu Madan; Rajiv Misra; Ashish Agrawal; Peter Schiffer; J B Boos; Brian R Bennett; Suman Datta; PENNSYLVANIA STATE UNIV STATE COLLEGE
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| Experimental gate capacitance (Cg ) versus gate voltage data for InAs0.8Sb0.2 quantum-well MOSFET (QWMOSFET) is analyzed using a physics-based analytical model to obtain the quantum capacitance (CQ) and centroid capacitance (Ccent). The nonparabolic electronic band structure of the InAs0.8Sb0.2 QW is incorporated in the model. The effective mass extracted from Shubnikov?de Haas magnetotransport measurements is in excellent agreement with that extracted from capacitance measurements. Our analysis confirms that in the ... |
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| Non-equilibrium GaNAs Alloys with Band Gap Ranging from 0.8-3.4 eV |
Jan 2010 |
4 pages |
| Authors:
K M Yu; S V Novikov; R Broesler; C R Staddon; M Hawkridge; Z Liliental-Weber; I Demchenko; J D Denlinger; V M Kao; F Luckert; CALIFORNIA UNIV BERKELEY LAWRENCE BERKELEY LAB
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| A new alloy system, the GaN(sub 1-x)As(sub x) alloys in the whole composition range was successfully synthesized using the non-equilibrium low temperature molecular beam epitaxy method. The alloys are amorphous in the composition range of 0.17 x 0.75 and crystalline outside this region. The amorphous films have smooth morphology, homogeneous composition and sharp, well defined optical absorption edges. The bandgap energy varies in a broad energy range from ... |
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| Low Temperature Photoluminescence and Leakage Current Characteristics of InAs-GaSb Superlattice Photodiodes |
01-Sep-2008 |
20 pages |
| Authors:
P A Folkes; J Little; S Svensson; K Olver; ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE
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| We report the results of a study of the temperature-dependent photoluminescence (PL) and leakage current characteristics of a set of type II idium arsenide (InAs)-gallium antimonide (GaSb) superlattice (SL) photodiode structures. We find that the PL efficiency of high-quality structures is determined by Shockley-Read and trap-assisted tunneling nonradiative recombination processes. Our results suggest a possible correlation between trap-assisted tunneling in some SL structures and an anomalous decrease in the PL ... |
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| A Projection of Moore's Law and Recommended Approaches to Manage and Mitigate Risks |
01 APR 2003 |
34 pages |
| Authors:
Greg Burns; William C. Marks; INDUSTRIAL COLL OF THE ARMED FORCES WASHINGTON DC
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| Moore's Law: The number of transistors that can be placed on a micro- circuit doubles every 18-24 months, resulting in a rapid turnover in generations of microcircuits. There are almost as many opinions about how long Moore's Law will be applicable as there have been technological advances since the Law was first annunciated in 1965. The majority of industry experts however believe that the physical limits of silicon based advancements ... |
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| Gas Source MBE Growth and Characterization of TlInGaAs/InP DH Structures for Temperature-independent Wavelength LD Application |
JAN 2002 |
5 pages |
| Authors:
Hajime Asahi; Hwe-Jae Lee; Akiko Mizobata; Kenta Konishi; Osamu Maeda; OSAKA UNIV (JAPAN) INST OF SCIENTIFIC AND INDUSTRIAL RESEARCH
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| TlInGaAs/InP double-hetero (DH) structures were grown on (100) InP substrates by gas source MBE. The photoluminescence (PL) peak energy variation with temperature decreased with increasing Tl composition. For the DH with a Tl composition of 13%, the PL peak energy varied only slightly with temperature (-0.03 meV/K). This value corresponds to a wavelength variation of 0.04 nm/K and is much smaller than that of the lasing wavelength of InGaAsP/InP distributed ... |
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| Chalcopyrite Magnetic Semiconductors: An Ab-Initio Study of Their Structural, Electronic and Magnetic Properties |
APR 2001 |
6 pages |
| Authors:
S. Picozzi; A. Continenza; W. T. Geng; Y. J. Zhao; A. J. Freeman; NORTHWESTERN UNIV EVANSTON IL
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| Stimulated by recent experimental observations of room temperature ferromagnetism of Mn(x)Cd(1-x)GeP2, we investigate the structural, electronic and magnetic properties of these systems as a function of Mn concentration by means of first-principles density-functional-theory-based codes. Moreover, we investigate the effect of the anion substitution (P vs As) in Mn-rich chalcopyrites. Our calculations indicate that the antiferromagnetic alignment is the most stable ordering for all the systems studied, at variance with that ... |
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| Research of Possibility of Semi-Conducting CdGeAs2 Making by the Way of Deep Impurities Doping |
22 JAN 2001 |
13 pages |
| Authors:
Valeri G. Voevodine; ADVANCED TECHNOLOGIES FOR OPTICAL MATERIALS TOMSK (RUSSIA)
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| This report results from a contract tasking Advanced Technologies for Optical Materials (ATOM) as follows: The contractor will develop methods of semi-conducting high-resistance CdGeAs2 crystal production by way of control doping by the impurities Cu, Au, Zn, Sc, and Se. Selection of the most promising impurities and optimization of the doping technology will allow minimization of optical loses in CdGeAs2-crystals and related to manufacture of ternary CdGeAs2 crystals with low ... |
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| Infrared Materials and Devices of III-V Arsenides and Antimonides by Molecular Beam Epitaxy |
01 MAR 2000 |
9 pages |
| Authors:
Wen I. Wang; TRUSTEES OF COLUMBIA UNIV NEW YORK
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| Infrared electroabsorption modulation in AlSb/InAs/AlGaSb/GaSb/AlSb stepped quantum wells grown by molecular beam epitaxy was achieved. Molecular beam epitaxial growth of GaInSbBi for 8-12 Micrometers infrared detector applications was demonstrated for the first time. AlAsSb/InAsSb heterojunction diodes were achieved on Si substrates by molecular-beam epitaxy with a suitable breakdown voltage for devise applications. Narrow band gap InAs high electron mobility transistors with heterojunction AlSbAs barriers ... |
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| Nonlinear Optical Materials |
10 FEB 2000 |
9 pages |
| Authors:
Valeri G. Voevodin; ADVANCED TECHNOLOGIES FOR OPTICAL MATERIALS TOMSK (RUSSIA)
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| This report results from a contract tasking Advanced Technologies for Optical Materials (ATOM) as follows: The contractor will grow and deliver a number of samples of ZnGeP2, CdGeAs2, and GaSe for characterization by AFRL/MLPO for possible use in tunable lasers in the mid- and far-IR. |
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| Second Harmonic Generation Probing of MnAs/Si(111) Heterostructures |
18 JUN 1999 |
4 pages |
| Authors:
A. G. Banshchikov; A. V. Kimel; V. V. Pavlor; R. V. Pisarev; RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
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| Ferromgnetic semiconductor heterostructures MnAs/Si(111) have been studied by using the optical second harmonic generation and the linear magneto-optical Kerr effect. Magnetic and crystallographic contributions to the SHG are separated on the base of rotational anisotropy method. Magnetic hysteresis loops measured by the SHG and the Kerr effect exhibit different behavior due to a different sensitivity Of two optical techniques to the interface surface and bulk properties. |
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| Anion Control in Molecular Beam Epitaxy of Mixed As/Sb III-V Heterostructures |
15 FEB 1999 |
6 pages |
| Authors:
Brian R. Bennett; B. V. Shanabrook; M. E. Twigg; NAVAL RESEARCH LAB WASHINGTON DC ELECTRONICS SCIENCE AND TECHNOLOGY DIV
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| Superlattices consisting of As monolayers (MLs) in (In,Ga,Al)Sb and Sb MLs in (In,Ga,Al)As were grown by molecular beam epitaxy and characterized by x-ray diffraction, Raman spectroscopy, and high-resolution transmission electron microscopy. In all cases, well-defined superlattices were formed when the growth temperature was sufficiently low. As temperature increases for the As MLs in antimonides, substantial intermixing occurs. For Sb MLs in arsenides, Sb evaporation from the surface increases with increasing ... |
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| Rare Earth Compound Integration with Semiconductors |
31 JAN 1998 |
5 pages |
| Authors:
Walter R. Lambrecht; CASE WESTERN RESERVE UNIV CLEVELAND OH
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| In this grant the electronic structure of rare earth pnictides (Erbium and Gadolinium arsenides, phosphides and nitrides) and related materials (Scandium nitride and arsenide) were investigated using first-principles calculations. The work provided theoretical support for a number of on-going experimental studies of the magnetotransport and interfacial properties of these materials and related devices. It identified new possible applications of these materials based on their magnetic properties. |
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| International Conference on Indium Phosphide and Related Materials, Held in Cape Cod, Massachusetts, on 11 - 15 May 1997 |
14 JAN 98 |
695 pages |
| Authors:
INSTITUTE OF ELECTRICAL AND ELECTRONICSENGINEERS INC PISCATAWAY NJ
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| Partial contents: Plenary Session - PLEN1 InP-Based Components for Telecom Systems in Europe; PLEN2 Advanced in InP-Based Optoelectronic Devices and Circuits for Optical Communication, Interconnection and Signal Processing; PLEN3 Unipolar Mid-Infrared Semiconductor Lasers; MA: Power Devices - MA1 Bandgap Engineered InP-Based Power Double Heterojunction Bipolar Transistor; MA2 0.9W/mm, 76% PAE (7GHz) GaInAs/InP Composite Channel HEMTS; MA3 High Power InAlAs/InGaAs/InP-HFET Grown by MOVPE; MA4 InP/InGaAs Double HBTs with High CW Power ... |
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| Interface Structure and Surface Polarity in CdTe/ZnTe/(112)Si Hetero- Epitaxial System |
JAN 1998 |
19 pages |
| Authors:
N. K. Dhar; ARMY RESEARCH LAB ADELPHI MD
|
| Tellurium adsorption on clean (112) Si surfaces obey a second order kinetic law. The adsorbed Te ad-atoms are highly immobile. Activation energies of adsorption and desorption were measured by isothermal desorption rates. A surface bond energy model was used to calculate the total energy for Te chemisorption on (111) terraces. This model yields a Si-Te bond energy of about 3.46 eV. As-Te bond energy was found to be about 4.0 ... |
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| Measurement of Ultrafast Carrier Recombination Dynamics in Mid-Infrared Semiconductor Laser Material |
02 DEC 97 |
210 pages |
| Authors:
William T. Cooley; AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH DEPT OF ENGINEERING PHYSICS
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| Shockley-Read-Hall, radiative, and Auger recombination rates in mid- infrared laser structures are measured and reported using time resolved photoluminescence (TRPL) frequency upconversion. The mid-IR lasers studied were actual InAsSb/InAlAsSb multiple-quantum-well (MQW) diode lasers emitting near 3. 3 micrometers which were previously characterized for laser performance. This effort extends the initial studies and reports on the carrier recombination dynamics. Shockley-Read-Hall, radiative and Auger recombination rates at low temperature (77 K) were ... |
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| Time Resolved Photoluminescence Spectra of a Mid-Infrared Multiple Quantum Well Semiconductor Laser |
DEC 1997 |
119 pages |
| Authors:
Anthony L. Franz; AIR FORCE INST OF TECH WRIGHT-PATTERSONAFB OH SCHOOL OF ENGINEERING
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| Recombination mechanisms in mid-IR semiconductor lasers are strongly dependent on the carrier density of the active region. The objective of this research is to improve previous carrier density estimates through the incorporation of spectral information. One hundred photoluminescence (PL) spectra were calculated for a variety of carrier densities. Calculations were made for an InAsSb/InAlAsSb multiple quantum well laser sample assuming parabolic bands. The widths of the calculated spectral profiles were ... |
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| Investigation of the Optical Properties of Ordered Semiconductor Materials |
22 JAN 97 |
158 pages |
| Authors:
Jack E. McCrae; AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH DEPT OF ENGINEERING PHYSICS
|
| Optical Studies have been conducted upon CdGeAs2 and ZnGeP2, two of the most promising semiconductors being developed for mid-infrared non-linear optics applications. These experiments included photoluminescence (PL) studies of both compounds as well as photoreflectance (PR) measurements upon CdGeAs2. In addition, Hall effect measurements were carried out upon CdGeAs2, to aid in interpretation of the optical data. PL was measured as a function of laser power, sample temperature, and crystal ... |
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| Ultra-Low Threshold Index-Confined Microcavity Lasers |
DEC 96 |
4 pages |
| Authors:
Dennis Deppe; TEXAS UNIV AT AUSTIN MICROELECTRONICS RESEARCH CENTER
|
| This project first demonstrated ultra-low threshold lasing with a lower n-type AlAs/GaAs DBR and an upper dielectric DBR. The threshold was reduced to ^40 micro A for 3 micrometers laterally sized devices. This remains the lowest threshold that has been reproducibly achieved in the oxide-confined VCSELs to date. Oxide confinement is a key in achieving ultra low threshold. Studies have also shown that diffraction loss due to the optical penetration ... |
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| Synthesis and Characterization of Potential Single-Source Precursors to Group 13-Antimonides |
30 OCT 96 |
23 pages |
| Authors:
R. A. Baldwin; E. E. Foos; R. L. Wells; P. S. White; A. L. Rheingold; DUKE UNIV DURHAM NC DEPT OF CHEMISTRY
|
| The bulk of our recent studies in the area of single-source precursors to 13-15 semiconducting materials has focused primarily on Group 13- phosphides and arsenides. This work has led not only to the isolation and characterization of many new potential precursor compounds, but also to the facile synthesis of nanocrystalline 13- 15 materials. A review of this general area, however, reveals that little investigation has been done in the area ... |
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| InAsSb(P)-InAsSb-InAs Long Wavelength Lasers |
OCT 96 |
104 pages |
| Authors:
M. Razeghi; J. Xu; S. Kim; D. Wu; M. Erdtmann; NORTHWESTERN UNIV EVANSTON IL
|
| We have grown InAsSb/InAsSbP DH laser structures and InAsSb/GaSb superlattices on InAs substrates. Our V/III ratio is between 40-100 for both the active and cladding layers, and the growth rate is 1.0 micrometer/hr, which resulted in a mirror-like surface morphology. The x-ray FWHM is 46 arc s. for the InAsb layer and 79 arc s. for the InAsSbP layer. PL intensity is unchanging up to 200 K and remains strong ... |
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| A Novel mm-Wave Heterojunction JFET Technology with Suppressed Hole Injection |
SEP 96 |
185 pages |
| Authors:
Umesh K. Mishra; Jeffrey B. Shealy; CALIFORNIA UNIV SANTA BARBARA
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| We have developed a device technology using n-AlInAs/GaInAs on InP substrates, where the gate technology incorporates a p-n junction barrier. The p-n junction exists between an undepleted p-type surface layer (p(+)-GaInAs) and the two-dimensional electron gas (2DEC) in the GaInAs channel. The p(+)-2DEG junction provides a sufficiently high gate barrier that exhibits low gate leakage current and a high breakdown voltage. At the same time, the fixed gate- to-channel separation ... |
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| Optoelectronic III-V Heterostructures by Gas-Source MBE |
30 APR 96 |
81 pages |
| Authors:
Gary Y. Robinson; COLORADO STATE UNIV FORT COLLINS DEPT OF ELECTRICAL ENGINEERING
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| The objective of this research program was to grow by molecular beam epitaxy (MBE) quantum well heterostructures of the alloy InGaAsP and related materials for use in high performance devices. The first task was to grow InGaAsP/GaAs and InGaAsP/InP structures for shallow quantum well (QW) optical modulators and other optoelectronics devices. The second task was to develop selective-area regrowth techniques for lateral definition of complex optoelectronic integrated devices. The method ... |
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| 5-Picosecond Photoconductive Sampling Oscilloscope |
14 APR 95 |
33 pages |
| Authors:
Steven Williamson; PICOTRONIX INC ANN ARBOR MI
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| During our Phase I SBIR we developed a novel laser-driven picosecond sampling photogate that has 5-picosecond temporal resolution and 10-microvolt sensitivity. The sampling gate system is evaluated and applied to several testing environments. To improve the sensitivity further, and lower the required excitation light level, we use a high-impedance transimpedance preamplifier stage. This amplifier permits us to measure signals down to 1 microvolt using less than 10 microwatts of average ... |
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| Fellowship in Physics |
02 JAN 95 |
11 pages |
| Authors:
A. J. Sievers; CORNELL UNIV ITHACA NY LAB OF ATOMIC AND SOLID STATE PHYSICS
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| The relaxation of molecular impurities in glasses has been gaining attention in recent years, partly due to the availability of novel spectroscopic techniques in the infrared region, including the development of powerful tunable infrared lasers needed to excite the vibrational transitions that are about 4 orders of magnitude weaker than electronic transitions. In general, glassy hosts offer the possibility to study the influence of a distribution the local environments on ... |
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| Materials for High-Power Laser Applications: Point Defects in KTP and ZnGeP2 |
30 SEP 94 |
54 pages |
| Authors:
Larry E. Halliburton; WEST VIRGINIA UNIV MORGANTOWN DEPT OF PHYSICS
|
| The operation of devices utilizing nonlinear optical materials such as KTP and ZnGeP2 are limited at high laser power by point defects in the crystal. This project has used electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) experimental techniques to identify and characterize the primary point defects in KTP, ZnGeP2, and CdGeAs2 crystals. In KTP, the primary electron trap (i.e., a Ti3+ ion) is associated with the formation ... |
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| Chemistry Involving the Separation, Isolation, and Immobilization of Ill-V Compound Semiconductor Nanocrystals and Quantum Dots |
14 SEP 94 |
11 pages |
| Authors:
Richard L. Wells; Louis A. Coury; DUKE UNIV DURHAM NC DEPT OF CHEMISTRY
|
| The facile thermolysis of Cl2GaP(SiMe3)22 to eliminate Me3 SiX and yield nanocrystalline GaP has been studied via thermal gravimetric analysis (TGA) and it has been found that the Me3SiCl is eliminated in a step-wise manner. Also, the new ternary single-source precursor Ga2(As,P)C13n has been synthesized and thermolyzed to yield the ternary III-V GaAsxPy. In addition, nanocrystalline GaAs and GaP, prepared by the Kher/Wells low temperature solution phase method, have been ... |
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| InAsP/InGaAs Materials Development for 2.1 Micron Avalanche Photodiodes. Phase 2 |
01 AUG 94 |
14 pages |
| Authors:
Gregory H. Olsen; Alvin Goodman; SENSORS UNLIMITED INC PRINCETON NJ
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| A full 2.1 micrometers InAsP/InGaAs avalanche photodiode structure was fabricated, processed, and fully tested during the past quarter. Although results were disappointing, it was only a first try and in fact, represented a "leap" beyond our proposed schedule. Figures 1 through 3 contain summaries of the measured data. Briefly, breakdown voltages were below 10 volts and dark currents at -5V were in the microamp range. A cutoff wavelength of 2.10 ... |
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| X-Ray Crystal Structure of a Monomeric Tris(Arsino)Gallane, ((Me3Si)2As) 3Ga |
18 JUL 94 |
16 pages |
| Authors:
Richard L. Wells; Mark F. Self; Ryan A. Baldwin; Peter S. White; DUKE UNIV DURHAM NC DEPT OF CHEMISTRY
|
| Early effects in organogallium-arsenic synthetic chemistry centered on the utilization of alkane elimination reactions, as evidenced by the work of Coates and co-workers in the 1960. Through their efforts, they were able to isolate mono(arsino) gallanes and show that intermolecular As-Ga bonding to form four-coordinate gallium and arsenic dominates the structural properties of these compounds. We desired to obtain sterically hindered arsinogallanes by this method. However, we discovered that the ... |
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| The Excitation Mechanism of Praseodymium-Doped Semiconductors |
JUN 94 |
171 pages |
| Authors:
Paul L. Thee; AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING
|
| This study on praseodymium (Pr) luminescence in Al(x)Ga(1-x)As was conducted to enhance the understanding of the excitation mechanism. Pr was implanted at 390 keV with doses from 5 x 10(exp 12) to 5 x 10(13)/sq cm into Al(x)Ga(1-x)As (x=0.0 to 0.50) wafers which were annealed using the rapid thermal annealing (RTA) method. Low temperature photoluminescence (PL) was conducted using an Ar-ion laser and Ge detector. PL emissions of Pr from ... |
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| Process of Making a Bistable Photoconductive Component. |
05 APR 1994 |
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| Authors:
Randy Rousch; Michael S. Mazzola; David C. Stoudt; DEPARTMENT OF THE NAVY WASHINGTON DC
|
 | Semi-insulating gallium arsenide wafers manufactured with varying silicon density shallow donors are copper compensated by heating to temperature of at least 550 deg C to thermally diffuse the copper into the wafers and thereby provide deep copper acceptors in the wafer. Higher annealing temperatures are employed for higher concentrations of silicon in the wafers and the thermal diffusion is accomplished in the presence of copper, and in some instances, in ... |
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| Optically Switched Submillimeter-Wave Oscillator |
08 FEB 94 |
29 pages |
| Authors:
Michael G. Spencer; Xiao Tang; HOWARD UNIV WASHINGTON DC
|
| There exists a critical need for efficient local oscillators for heterodyne mixers operating in the 300 to 3000 GHz region. Applications include space-based submillimeter wave imaging arrays, airborne atmosphere spectroscopy, all-weather imaging radar, non-destructive testing, plasma diagnostics, weapon and contraband detection and communications. In order to address these problems, we propose a novel low power semiconductor device which uses time delays from a common optical pulse train to achieve a ... |
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| Tris(trimethylsily)Arsine and Lithium Bis(trimethylsily)Arsenide |
18 JAN 94 |
12 pages |
| Authors:
Richard L. Wells; Mark F. Self; James D. Johansen; Janeen A. Laske; Steven R. Aubuchon; DUKE UNIV DURHAM NC DEPT OF CHEMISTRY
|
| The reported syntheses of the title compounds are a modification of the published procedures of Becker et al., ( ) designed to minimize Schlenk techniques and allow researchers to prepare two very useful compounds with a minimum of danger. Synthesis, Arsine, Arsenide. |
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| ErAs/GaAs Superlattice Infrared Detector by Chemical Vapor Deposition |
31 DEC 93 |
21 pages |
| Authors:
Greenweld; SPIRE CORP BEDFORD MA
|
| The objective of Phase I research was to demonstrate epitaxial growth of GaAs on ErAs on a GaAs substrate using metalorganic chemical vapor deposition. Three volatile erbium sources including cyclopentadienyl, methyl- cyclopentadienyl and tris-trimethyldisilylamide and two sources of arsenic, tertiarybutyl arsine and arsine were tested for ErAs epitaxial growth 011 GaAs. The optimum source chemical combination was arsine and erbium amide; all other combinations resulted in excess carbon incorporation into ... |
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| Focused-Ion-Beam Material Removal Rates |
SEP 93 |
19 pages |
| Authors:
Bruce Geil; ARMY RESEARCH LAB ADELPHI MD
|
| Focused-ion-beam milling is a tool used in failure analysis and production of integrated circuits. This technique uses a focused gallium beam to mill away materials on a surface. Each material mills at a different rate, which must be experimentally determined. The data presented here for several materials used in standard integrated circuit processes will allow the user to determine the dose level needed to mill a certain amount of a ... |
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| Scanning Tunneling Microscopy of III-V Semiconductors |
29 JAN 93 |
71 pages |
| Authors:
John D. Dow; ARIZONA STATE UNIV TEMPE DEPT OF PHYSICS
|
| We report the first scanning tunneling microscopy images with atomic resolution of steps on the (110) surfaces of InAs, InP, and InSb, and we propose models of the surface geometries which lead to those steps. Relaxation of the step edges is interpreted in terms of dimerization of neighboring atoms. These studies of steps provide the basic foundation for future work oriented toward understanding the roles of steps as nucleation centers ... |
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| Pseudomorphic Narrow Gap Materials for High Performance Devices |
14 JAN 93 |
14 pages |
| Authors:
Wen I. Wang; COLUMBIA UNIV NEW YORK DEPT OF ELECTRICAL ENGINEERING
|
| InAs field effect transistors (1 micrometer gate length) have been fabricated and showed extrinsic (intrinsic) transconductance as high as 414 mS/ mm (670mS/mm). The cut-off frequency is shown to be more than a factor of two greater than is typical for GaAs based FETs with comparable gate length. Kink- free AlInAs/GaInAs/InP HEMTs have been fabricated. Heterojunction transistors with impact ionization at the emitter-base junction (i.e, when conduction band offset is ... |
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| Design and Characterization of Optically Pumped Vertical Cavity Surface Emitting Lasers |
DEC 92 |
116 pages |
| Authors:
Richard J. Bagnell; AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING
|
| Vertical Cavity Surface Emitting Lasers (VCSELs) are a form of semiconductor laser which have their cavity oriented orthogonally to the plane of the wafer. The orientation necessitates short cavities, highly reflective mirrors and a relatively high gain/loss ratio. Even so, the resultant superior exit beam characteristics and the tight packing density of the finished lasers provide strong motivation for pursuing the growth of these structures. This thesis details the design ... |
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| Ultraviolet-Ozone Cleaning of Semiconductor Surfaces. Revision 1 |
OCT 92 |
48 pages |
| Authors:
John R. Vig; ARMY LAB COMMAND FORT MONMOUTH NJ ELECTRONICS TECHNOLOGY AND DEVICES LAB
|
| The ultraviolet (UV)/ozone surface-cleaning method, which is reviewed in this report, is an effective method of removing a variety of contaminants from silicon (as well as many other) surfaces. It is a simple-to-use dry process which is inexpensive to set up and operate. It can rapidly produce clean surfaces, in air or in a vacuum system, at ambient temperatures. In combination with a dry method for removing inorganic contamination, the ... |
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| HPM Damage Thresholds of GaAs FETs and HEMTs |
30 SEP 92 |
24 pages |
| Authors:
A. A. Moulthrop; M. S. Muha; R. B. Dybal; H. J. Winthoub; AEROSPACE CORP EL SEGUNDO CA
|
| Measurements are presented of the damage thresholds of low-noise gallium arsenide (GaAs) field-effect transistors (FETs) and high-electron- mobility transistors (HEMTs) when these devices are exposed to high-power microwave pulses. Because the devices measured have gate lengths of one-half micron or less, they represent the state of the art and thus provide a susceptibility database for receiver- and system-design engineers. As the devices were biased for low-noise opera- tion at room ... |
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| Characterization of Semi-Insulating Gallium Arsenide |
30 SEP 92 |
18 pages |
| Authors:
John S. Blakemore; WESTERN WASHINGTON UNIV BELLINGHAM DEPT OF PHYSICS AND ASTRONOMY
|
| This project was established effective October 1991, to continue through September 30 1992. Its purpose has been the electrical and oprical characterization of samples from melt-grown crystals of gallium arsenide (GaAs). Almost all of the samples measured during this 12-month period were undoped (nominally undoped), and almost all samples came from crystals grown at NRL by the vertical zone melt (VZM) method. A series of technical reports during the year ... |
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| Process Toward a Comprehensive Control System for Molecular Beam Epitaxy |
AUG 92 |
19 pages |
| Authors:
Oliver D. Patterson; Jeffrey J. Heyob; Steven J. Adams; Victor Hunt; Patrick H. Garrett; WRIGHT LAB WRIGHT-PATTERSON AFB OH
|
| A hierarchical control system for improving the manufacturing capability of the thin-film semiconductor growth process, Molecular Beam Epitaxy, is under development at the Air Force Materials Directorate. The focus of the first level is to improve the precision and tracking of the variables, flux and substrate temperature. The second level consists of an expert system that uses sensors to monitor the status of the product in order to generate a ... |
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| OMVPE Growth of InAsSbBi and Related Alloys Using New Organometallic Group V Sources |
01 JUN 92 |
14 pages |
| Authors:
G. B. Stringfellow; UTAH UNIV SALT LAKE CITY DEPT OF MATERIALS SCIENCE AND ENGINEERING
|
| The major goal of the project is the organometallic vapor phase epitaxial (OMVPE) growth of a new III/V alloy, InAsSbBi, with a band gap of <0.1 eV at 77 K. This material is expected to be useful for infrared detectors with response in the wavelength range from 8 to 12 microns. The alloy is metastable, but for certain growth conditions it can be produced by OMVPE. This requires very low ... |
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| Magnetostatic Wave Technology |
JUN 92 |
41 pages |
| Authors:
A. R. Calawa; R. A. Murphy; MASSACHUSETTS INST OF TECH CAMBRIDGE WELDING LAB
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| The integration of GaAs with ferrimagnetic garnets was investigated and demonstrated. A hybrid technique was first used to integrate two GaAs circuits with yttrium-iron garnet (YIG) delay lines, demonstrating the feasibility and benefits of combining the two materials in special microwave operations. The epitaxial growth of single-crystal GaAs on gadolinium-gallium garnet (GGG) was then accomplished, demonstrating a first step in the monolithic integration of the two materials. The hybrid circuit, ... |
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| MMIC GaAs Bonding Investigation |
JUN 92 |
81 pages |
| Authors:
H. Brumberger; J. Chaiken; P. A. Dowben; J. A. Schwarz; J. T. Spencer; SYRACUSE UNIV NY OFFICE OF SPONSORED PROGRAMS
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| Results of an investigation into methods of applying thin film technology to improve Gallium Arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) fabrication and packaging technologies are discussed. Progress in parallel research efforts to better understand the bonding of III-V compounds to substrates, to develop novel thin film deposition methods, and to design and synthesize new source compounds for III-V materials are reported. Techniques investigated include graphoepitaxy, upside-down structures, Ti bonding ... |
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| Novel Precursors for Organometallic Vapor Phase Epitaxy |
22 MAY 92 |
14 pages |
| Authors:
G. B. Stringfellow; UTAH UNIV SALT LAKE CITY DEPT OF MATERIALS SCIENCE AND ENGINEERING
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| During the development of organometallic vapor phase epitaxy (OMVPE) for the growth of III/V semiconductor materials, the choice of group III and group V source molecules has been limited: (1) only trimethyl- and triethyl- group IV and antimony compounds, developed for other applications, were available; (2) the hydrides were the only As and P sources capable of producing device quality material. The hazard posed by the hydride sources, due to ... |
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| Systems Engineering and Technical Assistance in Support of Digital Gallium Arsenide Insertion Projects |
30 APR 92 |
99 pages |
| Authors:
Daniel H. Butler; BOOZ-ALLEN AND HAMILTON INC ARLINGTON VA
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| Booz-Allen provided a high level of support, including systems engineering analyses and technical assistance for systems insertion efforts using digital Gallium Arsenide (GaAs). Once insertion candidates were chosen, Booz-Allen supported the insertion efforts by acting as a liaison between the government and GaAs contractors, attending and arranging contractor reviews, providing meeting facilities, and producing presentation materials. A major accomplishment under this contract was the development of a methodology for appraising ... |
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| Numerical Studies of Low Temperature Gallium Arsenide Buffer Layers and Their Influence on Device Operation |
APR 92 |
12 pages |
| Authors:
H. L. Grubin; J. P. Kreskovsky; SCIENTIFIC RESEARCH ASSOCIATES INC GLASTONBURY CT
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| This report summarizes recent work on the development and application of an algorithm for studying charge transport in low temperature gallium arsenide (LT GaAs) buffer layers and their influence on device operation. During this reporting period the drift and diffusion equations were modified to include the transient dependence of electrons and holes for gallium arsenide. Calculations were performed for two-terminal, one and two-dimensional structures. Studies with the one-dimensional structures focussed ... |
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| Radiation Effects in HEMTs |
31 DEC 91 |
110 pages |
| Authors:
G. J. Papaioannou; ATHENS UNIV (GREECE) DEPT OF PHYSICS
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| Various structure HEMTs have been irradiated with He ions (MeV alpha particle), fast neutrons and Co6O gamma rays. The radiation doze was varied up to 10(exp.13)a/sq cm, 10(exp.16)n/sq cm and 10(exp.7 rads Si. The investigation has been extended on GaAs Layers and AlGaAs/GaAs heterojunctions in order to determine the defects that are induced by radiation in GaAs and AlGaAs. The degradation sources of HEMTs and their dependence on the device ... |
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Reports by Keyword(s)
ARSENIDES
