| R AND D OF THE TECHNOLOGIES REQUIRED TO DESIGN AND FABRICATE ULTRAHIGH-SPEED COMPUTER SYSTEMS. |
JUL 1968 |
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| Authors:
MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
|
 | A research and development program directed toward the development of technologies for high speed computer subsystems is described. Increases in the yield of low power, high speed, high density ECL complex logic arrays, made possible by improved multilevel interconnection technologies, are reported. Multichip high speed LSI subsystems have been assembled by face-down bonding. Computer aid has been incorporated into a system for designing and generating photomasks for complex high speed ... |
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| DEVELOPMENT OF A BURIED-GATE POWER FIELD-EFFECT TRANSISTOR. |
JUL 1968 |
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| Authors:
W. C. Bruncke; TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV
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| Parasitic components of junction gate and insulated-gate field-effect-transistors were examined. Particular emphasis was directed toward evaluating their effects of the high-frequency performance of these devices. Using the results of this examination, a modified version of the initial power MOSFET was designed. The first run produced devices with similar d-c characteristics, but greatly reduced parasitic capacitance values. (Author) |
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| OPTOELECTRONIC SWITCH ARRAY. |
08 JUN 1968 |
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| Authors:
AUTONETICS ANAHEIM CA
|
| This report presents the initial work performed in the development of an optoelectronic switch array; i.e., an array of light sensitive integrated-memory circuits. The report is divided into five parts: (1) The objectives of the program; (2) The operation of two photo-sensing methods under consideration; (3) The candidate flip-flop circuits which have been breadboarded and the design interface electronics; (4) The design of the photomasks to be used to fabricate ... |
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| ACTIONS OF THE POPULATION IN A RURAL AREA WHEN THE CIVIL DEFENSE SIGNALS ARE GIVEN |
20 MAY 1968 |
18 pages |
| Authors:
G. P. Isakov; DEPARTMENT OF THE NAVY WASHINGTON DC
|
 | The document covers information citizens should have in order to prepare for defense against weapons of mass destruction, and to know what to do when civil defense signals are given as well as during the elimination of the effects of the enemy attack. |
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| CHEMICAL MILLING (DEEP CONTOUR ETCHING), |
20 MAY 1968 |
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| Authors:
V. A. Tarasova; FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
|
| For the shaping of parts, instead of mechanical removing of material to obtain a given form there is described a method of etching the material away with chemicals. There are four operations involved in this process. The material not to be removed is protected by paints and varnishes, preferably chlorinated-polyvinyl-chloride lacquers and enamels. Adhesive tapes and rubber are also used. The surface has to be prepared beforehand. Not more than ... |
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| VISUAL RECONNAISSANCE WITH TWO FIELDS OF VIEW UNDER CONDITIONS OF POOR VISIBILITY. |
MAY 1968 |
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| Authors:
Charles Bates Jr.; Steve A. Heckart; Herschel C. Self; Don F. McKechnie; E. P. Hanavan; AIR FORCE AEROSPACE MEDICAL RESEARCH LAB WRIGHT-PATTERSON AFB OH
|
| A flight test was conducted comparing a forward field of view with a combination forward-vertical field of view for visually acquiring tactical targets in a densely foliated environment. The test, using a B-50D aircraft, was conducted in the Panama Canal Zone under conditions of poor visibility (overcast, rain showers). Ten subjects, tested individually, used the forward field of view. Nine different subjects used the combination forward-vertical field of view. The ... |
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| STUDIES OF BINAURAL INTERACTION. |
01 APR 1968 |
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| Authors:
Thomas R. Evans; TRACOR INC AUSTIN TEX
|
| Basic studies of binaural interaction were continued. The areas of research pursued concerned the determination of the 'critical bands' for antiphasic signals under various intensive conditions, the effect of signal duration on 'critical bands,' the effect of harmonic relations on the detection of signals of uncertain frequency, and the influence of various auditory parameters on the cortical evoked response. (Author) |
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| DEVELOPMENT OF ELECTROPHORETIC PROCESS FOR COATING T-53 AIR DIFFUSER, EXHAUST DIFFUSER, AND COMBUSTION CHAMBER HOUSING WITH 'SERMETEL (TRADE NAME) W'. |
APR 1968 |
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| Authors:
Kenneth A. Gebler; VITRO LABS WEST ORANGE N J WEST ORANGE LAB
|
| This report covers activities accomplished during Phase IV of a ten (10) month program to develop an electrophoretic coating method for the application of a corrosion-resistant coating to all critical surfaces of the exhaust diffuser, air diffuser and combustion chamber housing of the T-53 Engine. During this phase full scale coating trials were made. Methods were developed for cleaning, coating, humidification and baking of parts. The coated parts were also ... |
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| THE EFFECT OF TONAL COMPONENTS IN SUBMARINE SONAR ON SIGNAL DETECTION AND RECOGNITION, |
14 MAR 1968 |
|
| Authors:
Martin S. Harris; Alan M. Richards; NAVAL SUBMARINE MEDICAL CENTER GROTON CONN SUBMARINE MEDICAL RESEARCH LAB
|
| Experiments were carried out to determine the effect of various tonal maskers on the sonar operator's ability to detect and discriminate signals. Thresholds were obtained for the detectability of 60 Hz and 400 Hz and their respective harmonics to 360 Hz and 3200 Hz in the presence of various white noise bands. Thresholds were also obtained for detection of amplitude modulated and frequency modulated noise signals in the presence of ... |
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| APPLIED RESEARCH IN THIN-FILM FIELD-EMISSION TUBES. |
MAR 1968 |
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| Authors:
Clifford Hartelius Jr.; Charles A. Spindt; Louis N. Heynick; STANFORD RESEARCH INST MENLO PARK CA
|
| Results of a long-range research and development program on micron-size field-emission devices, a unique class of active elements based on the ideas of K.R. Shoulders, are covered herein. In essence, this kind of device consists of a multilayer metal and dielectric film sandwich having a submicron-diameter vacuum cavity within which field emission is drawn and controlled by the application of voltages in the 10 to 100 V range to the ... |
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| MONAURAL LOUDNESS FUNCTIONS UNDER MASKING. |
14 FEB 1968 |
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| Authors:
Alan M. Richards; NAVAL SUBMARINE MEDICAL CENTER GROTON CONN SUBMARINE MEDICAL RESEARCH LAB
|
| Monaural sone functions are obtained for a no-noise condition and under five levels of masking noise, using the method of fractionation. This method precludes the use of both ears in obtaining such functions as has been the case with dichotic loudness balance, and other related procedures. The obtained curves are found to parallel previously found masked functions in one case, and in another to show a more rapid acceleration at ... |
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| THICK FILM RESISTOR FUNCTIONAL INKS AND PASTES FOR MICROELECTRONICS APPLICATIONS. |
01 FEB 1968 |
|
| Authors:
John T. Milek; HUGHES AIRCRAFT CO CULVER CITY CALIF ELECTRONIC PROPERTIES INFORMATION CENTER
|
| The report is a study prepared in response to a request for information and data on resistor ink and paste formulations used in microelectronics technology. This report also includes the chemical composition, electrical properties, effects of variables on the electrical properties, vendor suppliers, and other pertinent related information. (Author) |
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| THICK FILM CONDUCTOR FUNCTION INKS AND PASTES FOR MICROELECTRONICS APPLICATIONS. |
01 FEB 1968 |
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| Authors:
John T. Milek; HUGHES AIRCRAFT CO CULVER CITY CALIF ELECTRONIC PROPERTIES INFORMATION CENTER
|
| The report was prepared in response to a request for information and data on conductive ink and paste formulations used in microelectronics technology. These inks and pastes are usually applied to ceramin substrates, resistor areas, capacitor areas for electrical termination purposes by the so-called silkscreen process to form conducting regions or areas and in combination form the microcircuit (including hybrid as well as monolithic). (Author) |
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| GROWTH, PROCESSING AND CHARACTERIZATION OF BETA-SILICON CARBIDE SINGLE CRYSTALS, |
FEB 1968 |
|
| Authors:
Robert W. Bartlett; Robert A. Mueller; STANFORD RESEARCH INST MENLO PARK CALIF
|
| Vapor deposition of beta-silicon carbide on (111) beta-silicon carbide platelets is being studied using methyltrichlorosilane or mixtures of silane and propane. Although epitaxial deposits were achieved with either source gas, low octahedral steps (triangles) and numerous intergrown star-shaped hillocks on the alternate side usually occur. Process conditions were systematiclaly varied to improve the surface perfection, and n-type epitaxial layers with smooth surfaces free of hillocks were grown on n-type beta-silicon ... |
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| BATCH FABRICATION OF DISTRIBUTED LOGIC NETWORK. |
JAN 1968 |
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| Authors:
R. M. Trepp; WESTINGHOUSE DEFENSE AND ELECTRONIC SYSTEMS CENTER BALTIMORE MD AEROSPACE DIV
|
| The report covers technologies and investigations of the problems associated with fabrication of LSI Batch Fabricated Molecular systems as would apply to the building of associative memories, processors, and complex logic networks. The interconnection area, the mask generation, the insulation and metalization processes, the electrical characteristics and ultimate logic densities were investigated and reported on. (Author) |
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| UHF INTEGRATED CIRCUIT TECHNOLOGY. |
JAN 1968 |
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| Authors:
J. A. Archer; G. M. Purnaiya; FAIRCHILD CAMERA AND INSTRUMENT CORP MOUNTAIN VIEW CA FAIRCHILD SEMICONDUCTOR
|
| The report gives additional data characterizing monolithic UHF amplifiers using transistor-simulated inductance as an interstage element. The effect of ambient temperature on the frequency response is shown and the saturation characteristics are given. Fabrication of a modification of the original circuit designed for reduced noise figure has been started and the circuit schematic and mask layout are shown. The shunt-series feedback pair is described and its performance compared with that ... |
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| RESEARCH IN MICROMINIATURIZATION USING ELECTRON-ACTIVATED MACHINING TECHNIQUES. |
DEC 1967 |
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| Authors:
John Kelly; STANFORD RESEARCH INST MENLO PARK CALIF
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| The underlying theme was the development of a thin-film deposition and high-resolution micromachining technology that would ultimately permit the fabrication of data-processing systems having large numbers of suitably intercoupled active devices entirely under contaminant-free ultra-high-vacuum conditions. Only refractory metals and dielectrics would be utilized in the final structures to achieve the required degree of stability, uniformity, and operational life. Progress on the basic ultra-high-vacuum technology and ancillary instrumentation is described, ... |
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| INVESTIGATION OF HEAT REMOVAL FROM BOTH SIDES OF A TRANSISTOR CHIP EMPLOYING BUMP TECHNOLOGY. |
DEC 1967 |
|
| Authors:
H. F. Rueffer; R. J. Belardi; HUGHES AIRCRAFT CO NEWPORT BEACH CA MICROELECTRONICS LAB
|
| The following items were completed. (1) The design of four separate device structures; (2) The photolithographic masks were laid out and fabricated; (3) Nine lots of six wafers each were committed to processing with completed bumped dice from the initial lots available for mounting to headers; (4) Header design completed and delivery of 200 packages has been received; (5) A total of four dice have been successfully mounted on headers ... |
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| MANUFACTURING METHODS FOR CRYOELECTRIC MEMORIES. |
NOV 1967 |
|
| Authors:
John J. Carrona; R. A. Gange; H. G. Scheible; F. C. Brunner; RADIO CORP OF AMERICA PRINCETON NJ ELECTRONIC COMPONENTS AND DEVICES
|
| Work concerns operational cryoelectric memory planes of a bit capacity of about 250,000 on a 4.5-in. x 5.4-in. substrate. Arrays of loop cell type C design at a density of 6,500 cells/sq in. and a 6000-bit capacity were fabricated, evaluated, and utilized to construct a 10 to the 4th power-bit hybrid a,b memory system. This system, including the interface networks amplifiers, detectors, decoders, drivers, timing logic, strobe circuits, etc., was ... |
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| MICROWAVE TRANSISTORS. |
NOV 1967 |
|
| Authors:
Andy Anderson; David Boone; Harry Cooke; Charlie Dennis; Julius Lange; TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV
|
| Planar double-diffused transistors were fabricated using phosphorus-doped silicon dioxide as a mask. Some of the better devices exhibited the following microwave performance: unilateral gains of 10.0 dB at 3 GHz and 5.4 dB at 6 GHz; maximum available gains of 6.5 - 7.0 dB at 3 GHz and 2.0 - 2.2 dB at 6 GHz; noise figures of 6.6 - 7.4 dB at 3 GHz and 8.5 - 11.6 dB ... |
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| THIN-FILM POLYCRYSTALLINE FIELD-EFFECT TRIODE. |
OCT 1967 |
|
| Authors:
M. L. Topfer; A. H. Danis; A. K. Rapp; RADIO CORP OF AMERICA SOMERVILLE N J DEFENSE MICROELECTRONICS
|
| The report includes data covering all work done on this contract. The last half of the program phased into the development of complementary thin-film transistor circuits, using tellurium for the P-type and cadmium selenide for the N-type semiconductors. The circuit used was a three-input NAND gate. To increase yield and to improve circuit operation and stability, a new mask was introduced into the fabrication procedure. Since this mask defined the ... |
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| HETEROCRYSTAL INTEGRATED CIRCUIT TECHNIQUES. |
OCT 1967 |
|
| Authors:
E. Clayton Teague; Stacy B. Watelski; C. Dennis; L. Sharif; TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV
|
| The report contains a summary of experimental work related to the following topics: (1) Use of aluminum oxide, silicon oxide, and silicon nitride as possible masking materials for selectively etching GaAs and Ge deposition in GaAs; (2) Isolation properties of GaAs sub SI as received from crystal processing and after oxide and germanium growth; (3) Device characteristics of junctions formed in germanium regions selectively grown in germanium and in gallium ... |
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| HIGH VOLTAGE SOLAR CELL ARRAY SEGMENT. |
30 SEP 1967 |
|
| Authors:
T. P. Nowalk; WESTINGHOUSE ELECTRIC CORP YOUNGWOOD PA SEMICONDUCTOR DIV
|
| This report covers the progress on the High Voltage Solar Cell Array Segment. Processing of twelve inch long silicon web was performed. A number of modifications related to the photomasking and isolation diffusion steps were introduced which made this possible. The longest cell tested consisted of a 43-unit contiguous array which yielded VOC = 19.7 volts, ISC = 5.5 ma and PM = 71.4 mw under 100 sq cm tungsten ... |
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| AN EXPERIMENTAL DEVICE FOR CODING AND INTRODUCING ELECTRIC SIGNALS INTO COMPUTERS (EKSPERIMENTALNAYA USTANOVKA DLYA KODIROVANIYA I VVODA ELEKTRICHESKIKH SIGNALOV V EVM), |
29 SEP 1967 |
|
| Authors:
G. V. Vasilev; FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
|
| The use of general purpose memory-containing electronic computers permits the storage of information over the necessary periods of time and the processing of signals according to any required algorithms. Such computer use for the processing of electrical signals necessitates the design and construction of special devices for signal-to-code conversion and the introduction of such a code into the computer. The present article describes an experimental device which converts electrical signals ... |
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| INVESTIGATION OF RADIATION HARDENED CIRCUIT ELEMENTS, |
15 AUG 1967 |
|
| Authors:
D. A. McWilliams; N. J. Grannis; TRW SYSTEMS REDONDO BEACH CALIF
|
| A program was initiated to derive radiation hardened insulated gate field effect devices. Initial devices fabricated in silicon three microns thick was completed. The first lots obtained were P enhancement and N depletion devices. The device structures are shown with electrical characteristics. A theoretical derivation of transient currents in these VTT (Very Thin Technique) devices is shown and compared with conventional MOS and dielectrically isolated bipolar transistors. (Author) |
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| SELECTION OF AVERAGED STANDARD PICTURES, |
01 AUG 1967 |
|
| Authors:
G. L. Gimelfarb; FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
|
| A theoretical study is presented of averaged standard masks for correlation-type automatic readers. Correlation coefficients can be calculated either by optical or electrical correlators. Formulas are developed for the optimum standards, which minimize the error probability, for both cases. When the total number of black elements in the standard is great, the use of the first type standard (optical) yields a much lower error probability. A 'hybrid' circuit is recommended ... |
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| GAPLESS ELECTROLUMINESCENT DISPLAYS. |
AUG 1967 |
|
| Authors:
Everett J. Kelley; HARTMAN-HUYCK SYSTEMS CO HUNTINGTON STATION NY
|
| An experimental study of the lamination of electroluminescent (EL) display control electrodes, is described. The study included selection and test of suitable voltage barrier materials, for separation of adjacent or overlapping layers of electrodes. The material finally selected, polymeric 1,4-dimethylbenzene, proved to have very high dielectric strength, coupled with continuous pin-hole free film characteristics when used in very thin film layers. Films of 2 to 2.5 microns thickness proved to ... |
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| MASK FOR SELECTING ORDERS FOR USE WITH THE JARRELL-ASH ORDER SORTER, |
13 JUN 1967 |
|
| Authors:
A. Mykytiuk; S. S. Berman; NATIONAL RESEARCH COUNCIL OF CANADA OTTAWA (ONTARIO) DIV OF APPLIED CHEMISTRY
|
| A device is described which permits the masking of all but the wanted order when using the Jarrell-Ash 'order sorter'. Such a system permits the presentation of many more than the present 11 exposures on a single photographic plate. |
|
| MICROWAVE TRANSISTORS. |
JUN 1967 |
|
| Authors:
Andy Anderson; David Boone; Harry Cooke; Charlie Dennis; Julius Lange; TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV
|
| Planar double-diffused germanium transistors were fabricated using phosphorus-doped silicon diode as a mask. Base-collector time constants below 1.2 psec and frequencies above 7 GHz have been achieved consistently. The noise-figure objective of 5 dB at 3 GHz has been met within 0.5 dB. Gains of over 6.5 dB at 3 GHz have been achieved consistently. Silicon nitride masks and heavily doped base contact areas are being investigated. Improved versions of ... |
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| RESEARCH INTO NEW APPROACHES FOR VHF FILTER CRYSTALS. |
JUN 1967 |
|
| Authors:
D. J. Koneval; D. R. Curran; CLEVITE CORP CLEVELAND OH ELECTRONIC RESEARCH DIV
|
| An understanding of the behavior of thickness shear mode quartz resonators can be obtained by considering the problem of wave propagation in the quartz medium. The unelectroded portion of the wafer surrounding the electrodes of a resonator has a cut-off frequency for wave propagation that is higher than the resonant frequency of the electroded portion. The vibratory energy is therefore essentially confined to the electroded region with an energy distribution ... |
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| TRANSISTOR, UHF, SILICON, POWER, LINEAR, 50-WATT, 500-MHZ WITH 10-DB POWER GAIN. |
MAY 1967 |
|
| Authors:
J. F. O'Brien; RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
|
| The objective of this effort is to produce a transistor capable of delivering 50 watts of output power at 500 megahertz with 10-dB power gain and 50-percent efficiency. The objective will be achieved by using a metal-oxide-metal overlay structure employing integral leads. A proposed structure with the new device geometry is presented. Design characteristics are described. The advantages of employing metal-oxide-metal and integral lead technology are shown. Device development is ... |
|
| BROADBAND OPTICAL DETECTORS (1.06-MICRON). |
APR 1967 |
|
| Authors:
W. N. Shaunfield; D. W. Boone; Jim Sherer; TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV
|
| Results obtained during the first half of a program to develop a 1.06-micrometer optical detector are discussed. The detector will contain a germanium avalanche photodiode, thermoelectric cooler, biasing circuit, and preamplifier. Work during this half was concentrated on fabrication of both N(+)P and P(+)N photodiodes with a graded guardring to prevent edge breakdown. Diffusion masking problems prevented successful fabrication of the P(+)N structure; however, good N(+)P diodes were fabricated. Diodes ... |
|
| MICROWAVE TRANSISTORS. |
APR 1967 |
|
| Authors:
George Johnson; David Boone; Julius Lange; Jerry Moore; Clayton Teague; TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV
|
| This report describes advances in NPN planar-germanium transistor development for S and C band. Silicon nitride has been found to effectively mask both gallium and indium. Low-temperature sputtered films are being investigated. The Mo-Au contact system is now being used on the shallow-diffused germanium devices to reduce emitter base shorts resulting from use of aluminum expanded contacts. Detailed inductance measurements were made on the TI C-band and the miniature coaxial ... |
|
| MANUFACTURING IN-PROCESS CONTROL AND MEASURING TECHNIQUES FOR INTEGRAL ELECTRONICS. |
APR 1967 |
|
| Authors:
E. D. Metz; D. O. Wolkins; MOTOROLA INC PHOENIX AZ SEMICONDUCTOR GROUP
|
| The primary objective of this contract is to generate a system of nondestructive testing procedures for the entire series of processing steps used in the fabrication of semiconductor devices. The tests are intended to be of such a nature that they will find general applicability to a class of semiconductor processes common to ordinary devices such as transistors and diodes, semiconductor and compatible integrated circuits, and passive thin film components. ... |
|
| APPLICATION OF INFORMATION THEORY TO THE NERVOUS SYSTEM. |
APR 1967 |
|
| Authors:
H. D. landahl; CHICAGO UNIV ILL COMMITTEE ON MATHEMATICAL BIOLOGY
|
| Abstracts of three papers are given. The titles are: 'A Neural Net Model for Masking Phenomena', 'An Analysis of the Mechanical Forces in Each Semicircular Canal of the Cat Under Single and Combined Rotations', and 'A Study on the Biophysical Characteristics of the Cat Labyrinth'. A summary of preliminary investigations of Coriolis nystagmus is given. (Author) |
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| HIGH VOLTAGE SOLAR CELL ARRAY SEGMENT. |
31 MAR 1967 |
|
| Authors:
W. R. Harding Jr; WESTINGHOUSE ELECTRIC CORP YOUNGWOOD PA SEMICONDUCTOR DIV
|
| A solution to the problem of lateral isolation of a series string monolithic solar cell is presented. The structure produced cells with output voltages of 2 volts V max and 7.3% conversion efficiency under AM=0, 140 mw/sq cm illumination. Good curve factors and outputs were demonstated indicating the feasibility of internal, monolithic isolation and interconnection. (Author) |
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| TRANSISTOR, FIELD-EFFECT, HF, SILICON, POWER, LINEAR, 10-MEGAHERTZ, 5-WATT-PEP. |
MAR 1967 |
|
| Authors:
M. M. Mitchell; N. H. Ditrick; RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
|
| The purpose of this effort is to develop a 5-watt linear MOS power transistor for single-sideband-amplifier applications. The transistor must operate at 10 megahertz from a 28-volt power supply with an efficiency of at least 35 percent and with less than -35 dB intermodulation distortion. Substantial effort has been directed toward development of a process for obtaining high drain-to-source breakdown voltage in MOS devices. Experimental masks were designed for a ... |
|
| SINGLE CRYSTAL CADMIUM SULFIDE AND CADMIUM SELENIDE INSULATED-GATE FIELD-EFFECT TRIODES. |
MAR 1967 |
|
| Authors:
Thomas M. Bomber; Kenneth R. Runyan; AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING
|
| Insulated-gate field-effect triodes were fabricated on single crystal cadmium sulfide and cadmium selenide. Both bulk crystals and platelets were used for single crystal samples. Chromium and aluminum were found to make low impedance contacts to cadmium sulfide and cadmium selenide. The calculated effective drift mobilities of the fabricated single crystal IGFET's were three to four times greater than the highest reported value of polycrystalline cadmium sulfide and cadmium selenide IGFET's. ... |
|
| DEVELOPMENT AND EVALUATION OF TRANSISTOR, FIELD EFFECT, INSULATED GATE, 400-MEGAHERTZ AMPLIFIER. |
FEB 1967 |
|
| Authors:
N. H. Ditrick; M. M. Mitchell; RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
|
| A dual-gate tetrode n-channel MOS transistor with reduced channel dimensions has been developed. The reduced channel dimensions, 0.1 mil long by 10.0 mils wide, enable good power gain and noise performance at 400 megahertz. Cross-modulation distortion performance is excellent, comparable in all respects to low-frequency tetrodes developed under a previous contract. The major disadvantage of high-frequency-tetrode performance is the capacitance between second gate and center region, which reduces high-frequency power ... |
|
| DEVELOPMENT OF A 1-WATT, 2-GHZ SILICON UHF POWER TRANSISTOR. |
FEB 1967 |
|
| Authors:
E. T. Casterline; H. C. Lee; RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
|
| The purpose of this effort is to design and develop a 1-watt, 2-gigahertz silicon transistor having a minimum efficiency of 50 percent and a power gain of 10 dB. Considerable effort was placed on mechanical and environmental testing of the modified type-A coaxial package. Some difficulty was experienced in developing a process for hermetically sealing the modified package. The problem areas have been determined, and new methods are under investigation. ... |
|
| THIN-FILM CIRCUITS PRODUCT IMPROVEMENT, |
15 DEC 1966 |
|
| Authors:
John F. McGinley; John H. Patton; NAVAL AVIONICS FACILITY INDIANAPOLIS IN
|
| The report covers the mechanical redesign and modifications which were accomplished on the NAFI in-line vacuum deposition machine during the up-dating program in order to insure greater reliability of operation. It also covers the steps taken to improve the processes attending the fabrication of thin-film circuitry on glass substrates in an effort to produce a more reliable product at an acceptable yield rate. (Author) |
|
| CRYOGENIC RESEARCH. |
DEC 1966 |
|
| Authors:
Horace T. Mann; TRW SYSTEMS REDONDO BEACH CALIF
|
| Initial work on the Persistor soon required thin film technology which was considerably beyond the state-of-the-art at that time. Consequently a major fraction of effort was then, and continued to be, devoted to the understanding of the properties of thin films and their methods of fabrication. Somewhat later it became apparent that a crossed-film cryotron could serve both as a logical element and as a memory storage element. Work on ... |
|
| THIN-FILM POLYCRYSTALLINE FIELD-EFFECT TRIODE. |
NOV 1966 |
|
| Authors:
M. L. Topfer; J. J. Bowe; A. H. Danis; S. G. Ellis; J. J. Fabula; RADIO CORP OF AMERICA SOMERVILLE N J DEFENSE MICROELECTRONICS
|
| The report covers the work on the thin-film polycrystalline field-effect triode during the period of July 1, 1964 to June 30, 1966. All of the work on the contract is reviewed. The following work done during the eighth quarter is also covered. The behavior of the reversible gate instability at temperatures between -40C and +60C is discussed. The investigation was carried out to determine the variation of the instability mechanism ... |
|
| HIGH-INFORMATION-DENSITY STORAGE SURFACES. |
OCT 1966 |
|
| Authors:
K. T. Rogers; D. L. Cogswell; STANFORD RESEARCH INST MENLO PARK CA
|
| This report discusses contrast measurements taken with an unbakeable field-emitter scanning electron microscope on targets consisting of metal-dielectric-metal film sandwiches on substrates, with small holes through the first two layers. Synchronous lock-in amplification is shown to override stray electron noise, permitting the detection of target holes. Variations of secondary electron contrast with sandwich potential and electron multiplier bias are presented. Effects of electron polymerization contamination, ambient ac magnetic fields, and ... |
|
| DEVELOPMENT OF MANUFACTURING PROCESSES AND TECHNIQUES FOR MASS MEMORY. |
OCT 1966 |
|
| Authors:
Thomas L. McCormack; Maurice A. Morin; William J. Capell; William J. Gorman; R. J. Pinkerton; LABORATORY FOR ELECTRONICS INC BOSTON MA
|
| The general purpose of this project is to develop the manufacturing processes and the techniques applicable to the production of solid state random access mass memory systems with storage capacities up to 10 to the 8th power bits. The batch fabrication of memory planes has been brought from the experimental stage to the pilot manufacturing stage. The fabrication process is well enough understood and under adequate control to allow fabrication ... |
|
| NEW SOLID-STATE DEVICE CONCEPTS, |
SEP 1966 |
|
| Authors:
M. Aven; W. Garwacki; R. B. Hall; J. R. Richardson; H. H. Woodbury; GENERAL ELECTRIC CO SCHENECTADY N Y RESEARCH AND DEVELOPMENT CENTER
|
| The diffusion of Se in CdSe is found to be similar to that in CdS. Na diffuses rapidly in CdS, indicating an interstitial diffusion mechanism. Enhanced Na solubility in donor-doped material indicates, in addition, a substitutional form. In Cl-doped CdS it forms a rather stable NaCl complex 'molecule.' A method of measuring the diffusion profile of Cl using radioactive Na is indicated. Measurements show considerable overlap between the photoconductivity excitation ... |
|
| Superior Photoengraving Process for Semiconductor Devices |
SEP 66 |
40 pages |
| Authors:
C. J. Taylor; WESTINGHOUSE ELECTRIC CORP BALTIMORE MD
|
| An investigation of the preparation of a silicon wafer surface prior to the application of photoresist to improve the resist adhesion is reported. Several process variations for obtaining oxide surfaces are investigated and correlated with resist adhesion. Methods of mechanically and chemically conditioning the oxide-passivated surface of the wafer to improve the adhesion of resist are investigated. The effects of varying the resist coating thickness and the use of various ... |
|
| PRODUCTION ENGINEERING MEASURE FOR SILICON SWITCHING TRANSISTORS. |
25 AUG 1966 |
|
| Authors:
Mark Siegel; Jack Freese; MOTOROLA INC PHOENIX AZ SEMICONDUCTOR GROUP
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| Efforts were continued on a program to establish a production capability for a silicon NPN micropower switching transistor, type EL-2N(X-10). Work centered about finalization of material, diffusion, and probe specifications for the preproduction and production diffusion runs. Devices built to supply the final engineering sample have demonstrated the capability to produce both preproduction and producrion quantities. Additional processing work resulted in photoresist processing being improved by the addition of infrared ... |
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| SELECTIVE PHOTOCOPIER. |
JUN 1966 |
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| Authors:
D. A. Sokolov; XEROX CORP ROCHESTER NY
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| The purpose of this effort was to determine the feasibility of developing a Selective Photocopier through a study and investigation of various aspects of document preparation and handling and by the construction of a breadboard model. The Photocopier is a preprocessing device which will separately record text and graphic information from hard copy intelligence containing both. This preprocessing function will provide hard copy intelligence in a form suitable for automatic ... |
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| PRODUCTION ENGINEERING MEASURE FOR INSULATED GATE FIELD EFFECT TRANSISTORS. |
31 MAY 1966 |
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| Authors:
James K. George; Dale Reinke; Myint Hswe; Harry Forehand; MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV
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| The work centered mainly in four areas: two new photolithographic mask sets were devised to insure the necessary geometrical variations were investigated. These new sets will enable both epitaxial and nonepitaxial techniques to be more fully developed; stable processing steps were formulated with results shown on capacitance-voltage plots; advanced devices were fabricated using information obtained from the initial production group; reliability information was compiled and certain conclusions were drawn. (Author) ... |
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Reports by Keyword(s)
MASKING
