| COMPUTER MODELING OF THE COMPLETE IC FABRICATION PROCESS, FINAL REPORT |
SEP 1980 |
|
| Authors:
R.W. DUTTON
|
 | THIS RESEARCH EFFORT HAS RESULTED IN THE DEVELOPMENT OF DISTRIBUTION OF THE SUPREM PROGRAM. THE OVERALL FEATURES OF SUPREM ALLOW FOR PROCESS DESIGN, FUNDAMENTAL KINETIC STUDIES AND PROCESS CONTROL APPLICATIONS. UNDERSTANDING AND QUANTITATIVE MODELING OF MOVING BOUNDARY OXIDATION AND EPITAXIAL GROWTH INVOLVE MULTIPLE SPECIES AND TIME DEPENDENT KINETIC EFFECTS. |
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| WILD WEASEL RECEIVER SET AN/APR-38 RELIABILITY FAILURE SUMMARY REPORTS DATA ITEM4008 RELIABILITY ASSESSMENT REPORT DATA ITEM 4009 |
1980 |
|
| Authors:
H.C. HURLEY
|
| THE PURPOSE OF THESE RELIABILITY PRODUCTION TEST REPORTS IS TO SUMMARIZE ON A MONTHLY BASIS THE FAILURES OBSERVED DURING PRODUCTION RELIABILITY TESTING OF THE AN/APR-138 WILD WEASEL RECEIVER SET'S ACHIEVEMENT OF ITS RELIABILITY REQUIREMENT. THIS INFORMATION IS PRESENTED IN THIS REPORT IN THE TWO SECTIONS FOLLOWING. SECTION II CONTINS THE MONTHLY SUMMARY OF FAILURES OBSERVED DURING REL SCREEN TESTING. |
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| MANUFACTURING METHODS AND TECHNOLOGY (MM&T) MEASURE FOR FABRICATION OF SILICON TRANSCALENT TRANSISTOR, INTERIM TECHNICAL REPORT |
DEC 1979 |
|
| Authors:
M.F. DEVITO; S.W. KESSLER; R.E. REED
|
| RCA HAS SUCCESSFULLY COMPLETED THE PRODUCTION ENGINEERING, FABRICATION AND TESTING OF THE FIVE ENGINEERING SAMPLE DEVICES UNDER THIS MM&T CONTRACT. THIS REPORT THOROUGHLY DESCRIBES AND DISCUSSES THE ASSEMBLY AND PROCESS PROCEDURES AS WELL AS THE TEST CIRCUITS AND TEST RESULTS. ENVIRONMENTAL CAPABILITIES OF THE DEVICE WERE VERIFIED. THE REPORT ALSO INCLUDES NUMEROUS DETAILED DRAWINGS AND GRAPHS TO FURTHER ILLUSTRATE THE CHARACTERISTICS OF THIS LARGE SILICON NPN TRANSCALENT TRANSISTOR. |
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| MANUFACTURING METHODS AND TECHNOLOGY (MM&T) MEASURE FOR FABRICATION OF SILICON TRANSCALENT THYRISTOR, FINAL TECHNICAL REPORT |
OCT 1978 |
|
| Authors:
S.W. KESSLER; R.E. REED; W.L. KROWN
|
| THIS FINAL TECHNICAL REPORT DESCRIBES, IN DETAIL, THE PRODUCTION ENGINEERING OF THE TRANSCALENT THYRISTOR AND ALL ITS PARTS; ASSEMBLING AND PROCESSING PROCEDURES FOR THE THYRISTOR, AS WELL AS, TESTING CIRCUITS AND TEST RESULTS. EACH OF THESE TOPICS IS DISCUSSED IN DETAIL AS THEY PROGRESSED IN THE CONTRACT THROUGH FABRICATION OF THE ENGINEERING SAMPLES, CONFIRMATORY SAMPLES, AND A PILOT PRODUCTION RUN. |
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| IC FABRICATION USING ELECTRON-BEAM TECHNOLOGY, SEVENTH QUARTERLY REPORT |
AUG 1978 |
|
| Authors:
G.L. VARNELL; J.L. BARTELT; R.A. OWENS
|
| A NEW POSITIVE ELECTRON RESIST (TI-313) HAS BEEN IMPLEMENTED FOR FABRICATION OF 256-BIT BIPOLAR RAMS. THIS TI-313 RESIST HAS ALLOWED PLASMA ETCHING AT EACH OXIDE REMOVAL STEP IN THE PROCESS. THE PINHOLE DATA ON THIS RESIST AFTER OXIDE ETCH IS COMPARABLE WITH THAT MEASURED ON THE BEST STANDARD NEGATIVE PHOTORESISTS. PREVIOUS ATTEMPTS AT FABRICATING THE 256-BIT BIPOLAR RAMS HAVE FAILED DUE TO THE HIGH NUMBER OF DEFECTS IN THE OXIDE ... |
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| LIGHT EMMITING DIODES FOR FIBER OPTIC COMMUNICATIONS, SIXTH AND SEVENTH QUARTERLY REPORTS FOR THE PERIOD 1 JANUARY 1978 TO 30 JUNE 1978 |
30 JUN 1978 |
|
| Authors:
A. GENNARO
|
| THE DESIGN AND FABRICATION OF HIGH SPEED ETCHED-WELL LIGHT EMITTING DIODES FOR FIBER OPTIC COMMUNICATIONS IS DISCUSSED WITH REGARD TO MATERIALS SYNTHESIS VIA LPE, WAFER FABRICATION, AND DEVICE ASSEMBLY IN A MANUFACTURING ENVIRONMENT. |
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| IC FABRICATION USING ELECTRON-BEAM TECHNOLOGY, SIXTH QUARTERLY REPORT |
MAY 1978 |
|
| Authors:
G.L. VARNELL; R.A. WILLIAMSON; J.L. BARTELT
|
| A NEW POSITIVE ELECTRON RESIST (TI-313) HAS BEEN IMPLEMENTED FOR FABRICATION OF 256-BIT BIPOLAR RAMS. THIS TI-313 RESIST HAS ALLOWED PLASMA ETCHING AT EACH OXIDE REMOVAL STEP IN THE PROCESS. THE PINHOLE DATA ON THIS RESIST AFTER OXIDE ETCH IS COMPARABLE WITH THAT MEASURED ON THE BEST STANDARD NEGATIVE PHOTORESISTS. PREVIOUS ATTEMPTS AT FABRICATING THE 256-BIT BIPOLAR RAMS HAVE FAILED DUE TO THE HIGH NUMBER OF DEFECTS IN THE OXIDE ... |
|
| IC FABRICATION USING ELECTRON-BEAM TECHNOLOGY, FIFTH QUARTERLY REPORT |
APR 1978 |
|
| Authors:
G.L. VARNELL; R.A. WILLIAMSON; T.L. BREWER
|
| CONTINUITY AND INTEGRITY OF ELECTRON BEAM RESIST FILMS UNDER DEVICE PROCESSING CONDITIONS CAN CONTROL THE FUNCTIONAL YIELD OF INTEGRATED CIRCUITS FABRICATED USING ELECTRON-BEAM TECHNOLOGY. THIS REPORT DESCRIBES SEVERAL ELECTRICAL AND OPTICAL EVALUATIONS OF OXIDE PINHOLE DENSITY RELATED TO PROCESS INDUCED DEFECTS IN PBS AND TI-313 ELECTRON RESIST FILMS. SUCH PINHOLES ARE BELIEVED TO BE THE CAUSE OF THE ZERO FUNCTIONAL YIELD OBSERVED ON FIRST LOTS OF 256-BIT BIPOLAR RAM CIRCUITS ... |
|
| IC FABRICATION USING ELECTRON-BEAM TECHNOLOGY, THIRD QUARTERLY REPORT |
JAN 1978 |
|
| Authors:
G.L. VARNELL; R.A. WILLIAMSON; T.L. BREWER
|
| SLICE PROCESSING AND PROCESS DEVELOPMENT ON THE 256-BIT BIPOLAR RAMS HAS CONTINUED THIS QUARTER. FOUR LOTS OF BIPOLAR RAMS ARE PRESENTLY IN PROCESS AND THE OXIDATION, EPITAXIAL AND DIFFUSION PARAMETERS FROM THESE LOTS HAVE BEEN MEASURED. A COMPARISON BETWEEN THE MEASURED PARAMETERS AND THEIR SPECIFIED VALUES HAS BEEN MADE. THE PROCESS FROM POLISHED SUBSTRATE THROUGH DUF O.R. HAVE BEEN SIGNIFICANTLY MODIFIED TO REDUCE COST AND PROCESSING STEPS. WORK ON IMPROVING ... |
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| LIGHT EMMITING DIODES FOR FIBER OPTIC COMMUNICATIONS, FIFTH QUARTERLY REPORT FORTHE PERIOD 1 OCTOBER 1977 TO 31 DECEMBER 1977 |
31 DEC 1977 |
|
| Authors:
A. GENNARO
|
| THE DESIGN AND FABRICATION OF HIGH SPEED ETCHED-WELL LIGHT EMITTING DIODES FOR FIBER OPTIC COMMUNICATIONS IS DISCUSSED WITH REGARD TO MATERIALS SYNTHESIS VIA LPE, WAFER FABRICATION, AND DEVICE ASSEMBLY IN A MANUFACTURING ENVIRONMENT. |
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| LIGHT EMMITING DIODES FOR FIBER OPTIC COMMUNICATIONS, FOURTH QUARTERLY REPORT FOR THE PERIOD 1 JULY 1977 TO 30 SEPTEMBER 1977 |
20 DEC 1977 |
|
| Authors:
A. GENNARO
|
| THE DESIGN AND FABRICATION OF HIGH SPEED ETCHED-WELL LIGHT EMITTING DIODES FOR FIBER OPTIC COMMUNICATIONS IS DISCUSSED WITH REGARD TO MATERIALS SYNTHESIS VIA LPE, WAFER FABRICATION, AND DEVICE ASSEMBLY IN A MANUFACTURING ENVIRONMENT. |
|
| IC FABRICATION USING ELECTRON-BEAM TECHNOLOGY, FOURTH QUARTERLY REPORT |
NOV 1977 |
|
| Authors:
G.L. VARNELL; R.A. WILLIAMSON; T.L. BREWER
|
| THE TECHNICAL AND ECONOMIC IMPACT OF ELECTRON-BEAM DIRECT SLICE PRINTING WILL BE DEMONSTRATED ON 256-BIT BIPOLAR RAMS. ALL ELECTRON-BEAM TAPES NECESSARY FOR FABRICATING THE 256-BIT BIPOLAR RAMS HAVE BEEN GENERATED. ADVANCED SOFTWARE TECHNIQUES SUCH AS GEOMETRY SIZING, SORTING AND INCREMENT/DECREMENT WERE USED. E-BEAM PROCESSES HAVE BEEN DEVELOPED FOR ALL LITHOGRAPHIC STEPS ON THE 256-BIT BIPOLAR RAMS. BECAUSE OF THE PATTERN DISTORTION AT EPITAXIAL GROWTH, THE ORIGINAL ALIGNMENT MARKER SYSTEM WAS ... |
|
| IC FABRICATION USING ELECTRON-BEAM TECHNOLOGY, SECOND QUARTERLY REPORT |
JUL 1977 |
|
| Authors:
G.L. VARNELL; R.A. WILLIAMSON; T.L. BREWER
|
| THE TECHNICAL AND ECONOMICAL IMPACT OF ELECTRON-BEAM DIRECT SLICE PRINTING WILL BE DEMONSTRATED ON 256-BIT BIPOLAR RAMS. ALL ELECTRON-BEAM TAPES NECESSARY FOR FABRICATING THE 256-BIT BIPOLAR RAMS HAVE BEEN GENERATED. ADVANCED SOFTWARE TECHNIQUES SUCH AS GEOMETRY SIZING, SORTING AND INCREMENT/DECREMENT WERE USED. E-BEAM PROCESSES HAVE BEEN DEVELOPED FOR ALL LITHOGRAPHIC STEPS ON THE 256-BIT BIPOLAR RAMS. BECAUSE OF THE PATTERN DISTORTION AT EPITAXIAL GROWTH, THE ORIGINAL ALIGNMENT MARKER SYSTEM WAS ... |
|
| RELIABILITY OF A TREE NETWORK |
DEC 1976 |
|
| Authors:
S.S. TUNG
|
| THIS PAPER PRESENTS A MATHEMATICAL MODEL FOR COMPUTING THE RELIABILITY OF A SYSTEM WITH REDUNDANT COMPONENTS IN A TREE CONFIGURATION. THIS MODEL IS QUITE GENERAL AND CAN BE APPLIED TO ANY SYSTEM REPRESENTABLE BY THE APPROPRIATE TREE. A TYPICAL EXAMPLE IS CITED. A COMPUTER PROGRAM THAT COMPUTES RELIABILITY OF A SYSTEM WITH A TREE CONFIGURATION UP TO N STAGES IS ALSO PRESENTED IN THE APPENDIX. |
|
| ELECTROSTATIC-DISCHARGE DAMAGE TO SEMICONDUCTORS |
1976 |
|
| Authors:
|
| ELECTROSTATIC-DISCHARGE DAMAGE IS RESPONSIBLE FOR A LARGE NUMBER OF FAILURES IN SEMICONDUCTOR DEVICES. BECAUSE OF THE DIFFICULTY IN DETECTING THIS CLASS OF MICROSCOPIC FAILURES, THEY OFTEN BECOME EVIDENT ONLY UPON FAILURE OF THE COMPLETELY ASSEMBLED DEVICE. ELECTROSTATIC DISCHARGES CAN BE CAUSED BY THE KIND OF STATIC DISCHARGE EXPERIENCED AFTER TOUCHING A GROUND ON A COLD DRY DAY. SURPRISINGLY, HOWEVER, IT HAS BEEN FOUND THAT EVEN IN THE WARM HUMID ENVIRONMENT ... |
|
| HYBRID MICROCIRCUIT BUFFER - DEMODULATOR, DETAIL SPECIFICATION FOR |
11 FEB 1974 |
|
| Authors:
|
| THIS SPECIFICATION ESTABLISHES THE DETAILED REQUIREMENTS FOR BUFFER-DEMODULATOR HYBRID MICROCIRCUIT, G.E. DRAWING NUMBER 135C4071. |
|
| HYBRID MICROCIRCUIT, DUAL LEVEL DETECTOR, DETAIL SPECIFICATION FOR |
11 FEB 1974 |
|
| Authors:
|
| THIS SPECIFICATION SETS FORTH THE DETAILED REQUIREMENTS FOR THE HYBRID MICROCIRCUIT DUAL LEVEL DETECTOR, GENERAL ELECTRIC DRAWING NUMBER 135C4072. |
|
| HYBRID MICROCIRCUIT, QUAD OPERATIONAL AMPLIFIER AND DIODE NETWORK DETAIL SPECIFICATION FOR |
11 FEB 1974 |
|
| Authors:
|
| THIS SPECIFICATION SETS FORTH THE DETAILED REQUIREMENTS FOR THE HYBRID MICROCIRCUIT QUAD OPERATIONAL AMPLIFIER AND DIODE NETWORK, GENERAL ELECTRIC DRAWING NUMBER 144A8005. |
|
| NOISE IN MICROWAVE SEMICONDUCTOR OSCILLATORS AND AMPLIFIERS, SECOND INTERIM REPORT |
MAY 1973 |
|
| Authors:
M.S. GUPTA; G.I. HADDAD; R.J. LOMAX
|
| A THEORETICAL AND EXPERIMENTAL INVESTIGATION OF NOISE IN AVALANCHE TRANSIT-TIME DEVICES HAS BEEN CARRIED OUT. THE MAIN EMPHASIS HAS BEEN ON OSCILLATOR NOISE WHICH IS CHARACTERIZED BY AM AND FM NOISE SPECTRA. DETAILED CALCULATIONS HAVE BEEN CARRIED OUT FOR DETERMINING THE AM AND FM NOISE IN AVALANCHE TRANSIT-TIME OSCILLATORS AS A FUNCTION OF VARIOUS OPERATING PARAMETERS OF THE DEVICE, THE DIODE STRUCTURE AND MATERIAL PROPERTIES AS WELL AS THE EXTERNAL ... |
|
| MICROCIRCUIT, MONOLITHIC INTEGRATED CIRCUIT, ANALOG SWITCH - DETAIL |
17 APR 1972 |
|
| Authors:
|
| THIS SPECIFICATION SETS FORTH THE DETAILED REQUIREMENTS FOR A MICROCIRCUIT CONSISTING OF FOUR CHANNEL ANALOG SIGNAL SWITCHES AND THEIR ASSOCIATED DRIVERS. THE DEVICE IS A MONOLITHIC INTEGRATED CIRCUIT (MICROCIRCUIT). DRAWING 144A5565 REFERENCES THIS SPECIFICATION. |
|
| MICROCIRCUIT, MONOLITHIC INTEGRATED CIRCUIT, HIGH SPEED OPERATIONAL AMPLIFIER - DETAIL SPECIFICATION FOR |
11 APR 1972 |
|
| Authors:
|
| THIS SPECIFICATION ESTABLISHES THE DETAILED REQUIREMENTS FOR A HIGH SPEED OPERATIONAL AMPLIFIER MICROCIRCUIT. THIS DEVICE IS A MONOLITHIC INTEGRATED CIRCUIT MICROCIRCUIT. DRAWING 144A8599 REFERENCES THIS SPECIFICATION. |
|
| MICROCIRCUIT, MONOLITHIC INTEGRATED CIRCUIT, VOLTAGE REGULATOR - DETAIL SPECIFICATION FOR |
03 FEB 1971 |
|
| Authors:
|
| THIS SPECIFICATION ESTABLISHES THE DETAILED REQUIREMENTS FOR A PRECISION VOLTAGE REGULATOR CONSISTING OF A TEMPERATURE COMPENSATED VOLTAGE REFERENCE AMPLIFIER, AN ERROR AMPLIFIER, A SERIES PASS TRANSISTOR, AND CIRCUITRY TO PERMIT CURRENT LIMITING. THE DEVICE IS A MONOLITHIC INTEGRATED CIRCUIT MICROCIRCUIT. DRAWING 144A5564 REFERENCES THIS SPECIFICATION. |
|
| MICROCIRCUIT, MONOLITHIC INTEGRATED CIRCUIT, HIGH INPUT IMPEDANCE OPERATIONAL AMPLIFIER - DETAIL SPECIFICATION FOR |
02 FEB 1971 |
|
| Authors:
|
| THIS SPECIFICATION ESTABLISHES THE DETAILED REQUIREMENTS FOR A HIGH INPUT IMPEDANCE OPERATIONAL AMPLIFIER REQUIRING A SINGLE EXTERNAL CAPACITOR FOR FREQUENCY COMPENSATION. THE DEVICE IS A MONOLITHIC INTEGRATED CIRCUIT MICROCIRCUIT. DRAWING 144A5563 REFERENCES THIS SPECIFICATION. |
|
| MICROCIRCUIT, MONOLITHIC INTEGRATED CIRCUIT, DUAL CHANNEL VOLTAGE COMPARATOR - DETAIL SPECIFICATION FOR |
02 FEB 1971 |
|
| Authors:
|
| THIS SPECIFICATION ESTABLISHES THE DETAILED REQUIREMENTS FOR A VOLTAGE COMPARATOR HAVING TWO CHANNELS WITH DIFFERENTIAL INPUTS AND WITH THE OUTPUTS CONNECTED IN PARALLEL TO GIVE A SINGLE COMPARATOR OUTPUT. STROBE INPUTS ARE PROVIDED TO PERMIT INDEPENDENT ENABLING/DISABLING OF THE TWO COMPARATOR CHANNELS. DRAWING 144A5562 REFERENCES THIS SPECIFICATION. |
|
| MICROCIRCUIT, MONOLITHIC INTEGRATED CIRCUIT, DUAL OPERATIONAL AMPLIFIER - DETAILSPECIFICATION FOR |
26 JAN 1971 |
|
| Authors:
|
| THIS SPECIFICATION ESTABLISHES THE DETAILED REQUIREMENTS FOR A MICROCIRCUIT CONSISTING OF TWO FREQUENCY COMPENSATED OPERATIONAL AMPLIFIERS IN A SINGLE PACKAGE. DRAWING 144A5561 REFERENCES THIS SPECIFICATION. |
|
| MICROCIRCUIT, MULTICHIP HYBRID, ANALOG SWITCH - DETAIL SPECIFICATION FOR |
22 JAN 1971 |
|
| Authors:
|
| THIS SPECIFICATION ESTABLISHES THE DETAILED REQUIREMENTS FOR MICROCIRCUITS CONSISTING OF MULTIPLE CHANNEL ANALOG SIGNAL SWITCHES AND THEIR ASSOCIATED DRIVERS. THE DEVICES ARE MULTICHIP HYBRID MICROCIRCUITS. DRAWING 144A5559 REFERENCES THIS SPECIFICATION |
|
| MICROCIRCUIT, MONOLITHIC INTEGRATED CIRCUIT, BINARY COUNTER - DETAIL |
20 JAN 1971 |
|
| Authors:
|
| THIS SPECIFICATION ESTABLISHES THE DETAILED REQUIREMENTS FOR A SYNCHRONOUS FOUR STAGE BINARY COUNTER. THIS DEVICE IS A MONOLITHIC INTEGRATED CIRCUIT MICROCIRCUIT CONSTRUCTED USING A TRANSISTOR-TRANSISTOR CIRCUIT MICROCIRCUIT CONSTRUCTED USING A TRANSISTOR-TRANSISTOR (TTL) CONFIGURATION. DRAWING 144A5558 REFERENCES THIS SPECIFICATION. |
|
| MICROCIRCUIT, MONOLITHIC INTEGRATED CIRCUIT, DUAL J-K FLIP/FLOPS - DETAIL SPECIFICATION FOR |
11 JAN 1971 |
|
| Authors:
|
| THIS SPECIFICATION ESTABLISHES THE DETAILED REQUIREMENTS FOR DUAL J-K MASTER-SLAVE TYPE FLIP-FLOPS. THIS DEVICE IS A MONOLITHIC INTEGRATED CIRCUIT MICROCIRCUIT CONSTRUCTED USING A TRANSISTOR-TRANSISTOR (TTL) CONFIGURATION. DRAWING 144A5556 REFERENCES THIS SPECIFICATION. |
|
| MICROCIRCUIT, MONOLITHIC INTEGRATED CIRCUIT, TTL GATES - DETAIL SPECIFICATION FOR |
31 DEC 1970 |
|
| Authors:
|
| THIS SPECIFICATION ESTABLISHES THE DETAILED REQUIREMENTS FOR TTL GATES. THIS DEVICE IS A MONOLITHIC INTEGRATED CIRCUIT MICROCIRCUIT CONSTRUCTED USING A TRANSISTOR-TRANSISTOR (TTL) CONFIGURATION. |
|
| The Prediction of Solar Proton Events Based on Solar Radio Emissions. |
23 JUL 1970 |
|
| Authors:
William E. O'Brien; AIR FORCE CAMBRIDGE RESEARCH LABS HANSCOM AFB MA
|
| The short-term prediction of solar proton events based on a distinct U-shaped radio burst signature is verified. The prediction technique uses peak flux density values of discrete frequency solar radio burst observations in the 100 to 10,000 MHz region. The criteria are applied to all major proton events from 1952 to 1969 and afford almost total success in predicting near-earth particle events that emanated from visible hemisphere regions of the ... |
|
| THE FLUID TRANSPIRATION ARC AS A RADIATION SOURCE FOR SOLAR SIMULATION. |
30 SEP 1968 |
|
| Authors:
Charles Sheer; Samuel Korman; COLUMBIA UNIV NEW YORK ELECTRONICS RESEARCH LABS
|
| During this period the major effort was expended in determining the optimum conditions for stable operation of the collinear, opposing flow geometry, described in previous reports. Source testing was carried out in the 5 to 10 KW power range at pressures ranging from 50 to 180 psig. Two sources of erratic operating behavior were encountered, analyzed, and corrected. These consisted of a tendency for the column to elongate and to ... |
|
| MEASUREMENT OF CLOUD REFLECTANCE PROPERTIES AND THE ATMOSPHERIC ATTENUATION OF SOLAR AND INFRARED ENERGY. |
DEC 1967 |
|
| Authors:
M. Griggs; W. A. Marggraf; GENERAL DYNAMICS/CONVAIR SAN DIEGO CALIF
|
| The results of measurements made with an instrumented DC-3 aircraft are presented and discussed. In the infrared 8 to 14 microns 'window' region, both the integrated and spectral radiances of different surfaces were measured as a function of altitude to 18,000 feet, and compared with a theoretical model. Surface temperature measurements were made in order to determine the mean emissivity of stratus clouds, the ocean, the desert, and snow, in ... |
|
| SOLAR X-RAY SPECTRUM BELOW 25 A, |
OCT 1967 |
|
| Authors:
H. R. Rugge; A. B. C. Walker Jr; AEROSPACE CORP EL SEGUNDO CALIF LAB OPERATIONS
|
| A pulse-height analyzed proportional counter and a Bragg crystal spectrometer, both mounted on a compact solar pointer, were flown on the polar, earth-oriented satellite 1966-111B and obtained solar X-ray spectra below 25 A. The crystal spectrometer yielded one highly resolved spectrum from 7 to 25 A every 250 sec. Over the observed range, much of the X-ray energy is in line radiation. The predominant lines are those of the ions ... |
|
| THE DESIGN AND CONSTRUCTION OF THIN FILM RADIATION THERMOPILES. |
APR 1966 |
21 pages |
| Authors:
D. F. Frazine; ARNOLD ENGINEERING DEVELOPMENT CENTER ARNOLD AFS TN
|
 | Thin film radiation thermopiles promise substantial improvement in detector performance and construction cost over conventional solid-wire thermopiles when used in space simulation chambers for measuring simulated solar total irradiance. Three types of substrates were used during the investigation of thin film construction techniques: (1) aluminum foil suspended over a channel cut in the heat sink, (2) thin Mylar suspended over a channel cut in the heat sink, and (3) the ... |
|
| A STUDY OF OPTICAL SYSTEM CONCEPTS AND HIGH INTENSITY LIGHT SOURCES FOR SOLAR RADIATION SIMULATION, |
MAY 1965 |
409 pages |
| Authors:
Halbert Fischel; Roger R. Hughes; HONEYWELL INC WEST COVINA CA ORDNANCE DIV
|
| This study was made to evaluate three new high-powered arc sources as possible radiation sources for a large modular solar simulator. The three sources are (1) the Vortex Stabilized Radiation Source developed by Giannini Scientific Corp.; (2) the Fluid Transpiration Arc; and (3) the High Intensity Carbon Arc. The radiation characteristics of the sources have been studied to determine the spectral properties of the radiation from each source, and to ... |
|
| THE RESPONSE OF HIGH ALTITUDE IONIZATION CHAMBERS DURING THE 1954-1965 SOLAR CYCLE. |
22 MAR 1965 |
|
| Authors:
R. H. Callender; J. R. Manzano; J. R. Winckler; MINNESOTA UNIV MINNEAPOLIS SCHOOL OF PHYSICS AND ASTRONOMY
|
| The response of an integrating ionization chamber at 10 g/sq cm depth in the atmosphere to particles of various rigidities is evaluated by using the change of ionization with latitude. This procedure yields the differential response curves at solar minimum and solar maximum and also the mean rigidity of response at any given latitude. For high latitude and Minneapolis, the mean responses are 2.5 bv and 3.2 bv, respectively, at ... |
|
| A NEW TABLE AND APPROXIMATION FORMULA FOR THE RELATIVE OPTICAL AIR MASS, |
NOV 1964 |
|
| Authors:
Fritz Kasten; COLD REGIONS RESEARCH AND ENGINEERING LAB HANOVER N H
|
| A table is presented which is computed from the air density profile of the ARDC Model Atmosphere, 1959, up to 84 km height; n sub 0 = 1.000276 is taken corresponding to air of 15C and 1013.25 mb (ground level values of the ARDC Model Atmosphere, 1959) and to the wavelength 0.7 mu. This wavelength is more representative for the whole solar spectrum than 0.54 mu because it divides the ... |
|
| DAILY SUMS OF GLOBAL RADIATION FOR CLOUDLESS SKIES, |
NOV 1964 |
|
| Authors:
S. J. Bolsenga; COLD REGIONS RESEARCH AND ENGINEERING LAB HANOVER N H
|
| Quantitative information on global radiation for studies pertaining to the distribution, accretion, and ablation of ice and snow, thawing of soils, evaporation, and climatology is given in tables containing radiation received on a horizontal surface under cloudless skies. Sums of global radiation were computed as a function of geographic latitude, declination of the sun, precipitable water content of the atmosphere and atmospheric dust attenuation to the solar beam. A method ... |
|
| RADIO EVIDENCE FOR SOLAR CORPUSCULAR EMISSION, |
JUL 1964 |
20 pages |
| Authors:
A. Maxwell; R. J. Defouw; P. Cummings; HARVARD RADIO ASTRONOMY STATION FORT DAVIS TX
|
| This paper reviews the relation of solar radio bursts of spectral type IV to the ejection of relativistic and sub-relativistic solar particles; the relation of bursts of types II and IV to the ejection of solar plasma; and radar evidence for quiet solar streaming. Ejection of relativistic and sub-relativistic particles by flares is virtually always accompanied by type-IV radio bursts. The minimum Sun-Earth travel time for these particles is about ... |
|
| STUDY OF THE POLARIZATION OF RADIATION FROM SOLAR CORONA, BASED ON OBSERVATION OF TOTAL SOLAR ECLIPSE ON FEBRUARY 25TH, 1952, |
13 OCT 1960 |
|
| Authors:
M. A. Vashakidze; FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
|
| An examination of photographic material obtained during the total solar eclipse over Turkmenian SSR in February 1952 resulted in the following conclusions concerning the polarization of the coronal radiation: (1) The fact that the corona is not spherically symmetrical with regard to radiation is again confirmed. (2) The degree of polarization is linked directly with solar activity. (3) Since the coronal luminescence is polarized radially, it is not necessary to ... |
|
| OBSERVATIONS OF SOLAR RADIATION CONDUCTED DURING SOLAR ECLIPSE ON JUNE 30TH, 1954, IN BYURAKAN, |
OCT 1960 |
|
| Authors:
V. A. Sanamyan; G. A. Erznkanyan; FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
|
| A solar eclipse, which was visible over the European part of the Soviet Union in June 1954, was observed at wavelengths of 4.2, 1.5, 0.5 m. The observational procedures are described and the resultant data are discussed. It is confirmed that the long wavelength emissions originate primarily in the corona, while the short wavelengths emanate almost entirely from the lower layers of the corona. |
|
Reports by Keyword(s)
(SOLAR RADIATION
