| Linear Detector Array. |
JUL 1975 |
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| Authors:
D. A. Macdonald; HONEYWELL RADIATION CENTER LEXINGTON MA
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 | Design, fabrication and test of a beam expander for a 250-watt C02 laser is described. A laser beam of circular cross section is expanded into a fan-shaped beam 5 milliradians by 1 milliradian. The design, fabrication and test of two five-channel receivers for use at 10.6 micrometers is described. A nonheterodyne five-channel receiver uses a linear array of five photoconductive (Hg,Cd)Te detectors with wavelength detectivity of 2 x 10 to ... |
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| 1.06 Micron Sensor Array for Track and Receive. |
DEC 1973 |
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| Authors:
Richard C. Eden; ROCKWELL INTERNATIONAL CORP THOUSAND OAKS CALIF SCIENCE CENTER
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| The development of a 12-element array of inverted heterojunction III-V alloy microwave avalanche photodiodes for use for data detection and tracking in a 10 to the 9th power bit/second satellite-to-satellite 10.06 micron laser communications system is reported. The three arrays delivered under the terms of this contract have quantum efficiencies (constant from dc to microwave) of about 95% at the 1.064 Nd-YAG laser line, narrow band photoresponse characteristics (750A FWHM), ... |
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| 1.06 Micron High Sensitivity IR Photocathode. |
AUG 1973 |
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| Authors:
J. S. Harris Jr; ROCKWELL INTERNATIONAL THOUSAND OAKS CA SCIENCE CENTER
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| The design and progress towards development of a field assisted double heterojunction photocathode with high quantum efficiency at 1.06 micron is reported. This project covers three main areas: 1. The growth by liquid phase epitaxy and characterization of GaAsSb and GaAlAsSb alloys of suitable composition for fabricating a heterojunction photocathode. 2. Experimental and theoretical studies on the electron and hole transport and optical properties of heterojunctions between various III-V alloys ... |
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| InAs Photodiode Mosaic. |
JUN 1973 |
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| Authors:
James C. Kim; GENERAL ELECTRIC CO SYRACUSE NY IMAGING DEVICES OPERATION
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| InAs diode array infrared vidicon targets, which can be operated in a charge-storage mode via electron beam scanning, have been developed and demonstrated. The basic steps include (1) production of low leakage current array diodes, (2) effective target surface passivation to prevent the beam from landing on the n-substrate surface, and (3) deposition of a charge removing layer on the passivated dielectric surface. Reverse-biased InAs photodiodes yield an internal current ... |
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| Optoelectronic Aspects of Avionic Systems. |
JUN 1973 |
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| Authors:
James R. Biard; SPECTRONICS INC RICHARDSON TX
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| This document is the final report of an initial study of the optoelectronic aspects of avionic systems. Airborne avionics systems are moving toward the use of party line multiplex data buses for the transmission of the growing number of digital signals found in modern aircraft. Optoelectronic technology provides a data bus interface system consistent with military requirements that is potentially far superior to wire techniques. The optoelectronic interface is also ... |
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| Instrumentation and Procedures for Low-Background Detector Measurements (Photodetector Series, 82nd Report). |
19 MAY 1970 |
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| Authors:
D. C. Arrington; R. L. Bates; W. L. Eisenman; J. D. Merriam; D. L. Stierwalt; NAVAL ELECTRONICS LAB CENTER SAN DIEGO CA
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| The purpose of this program is to provide an 'in-house' government capability for measuring and characterizing the performance of infrared sensors operating under low-background conditions. Instrumentation is being developed to allow detector measurements at background flux levels from 1,000,000 to 10 to the 16th power photons/sec/sq cm, over the spectral range from 1 to 20 microns. The detector parameters to be measured and characterized are spectral response, responsivity, noise spectrum, ... |
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| Gallium-Arsenide Photoelectric Receiving Devices, |
13 FEB 1970 |
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| Authors:
Michal Korwin-Pawlowski; FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
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| A review of the state of the art in galium arsenide photoelectric devices for radiation detection and energy conversion is made, based on recent foreign publications. The construction, fabrication techniques and pro perties of various kinds of photoresistors, photodiodes and solar cells made of GaAs are described. (Author) |
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| HIGH-SPEED RECORDING ON INFRARED FILM WITH GALLIUM ARSENIDE LIGHT EMITTING DIODES, |
17 NOV 1967 |
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| Authors:
Milton Green; NAVY UNDERWATER SOUND LAB NEW LONDON CONN
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| Optical recording on high-speed infrared film with two gallium arsenide intensity-modulated light emitting diodes (LED-10 and LED-11) was experimentally investigated to determine the maximum frequency of recording under the limitations of a system having the following components: (1) An Oscillo Record Camera Model F-246A at f/1.5 with the auxiliary optics of two identical lenses with diameters of 0.19 inch and focal lengths of 0.20 inch; (2) High-Speed Infrared Film; and ... |
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| DEVELOPMENT AND FABRICATION OF SOLID-STATE HIGH-SPEED OPTICAL DETECTORS. |
JUN 1967 |
19 pages |
| Authors:
Wallace N. Shaunfield; TEXAS INSTRUMENTS INC DALLAS
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 | Work continued on development and fabrication of a high-speed silicon avalanche photodetector optimized for operation at 0.9 micrometer. During this quarter work was concentrated on the fabrication and characterization of diodes. A run of NPpiP diodes was completed with avalanche breakdown taking place in the active region instead of the edge. However, there were microplasmas, and the gains were low. A new run of the graded-guardring structure was completed, and ... |
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| AVALANCHE MODE PHOTODIODES FOR HETERODYNE TECHNIQUES AT 1.06 MICRONS. |
JAN 1967 |
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| Authors:
Harry Kroger; SPERRY RAND RESEARCH CENTER SUDBURY MA
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| The report describes the development of techniques leading toward realization of a 1 GHz bandwidth photodiode sensitive to 1.06 micron radiation. Two types of avalanche-mode photodiodes capable of internal signal gain were developed for this purpose. For the first device type, a planar diode produced by the nitride technique, poor passivation resulted in soft diodes. Investigations show that surface preparation does not improve passivation, but that improper wafer chemical treatment ... |
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(Photodiodes
