| TRANSISTOR, UHF, SILICON, POWER, LINEAR, 50-WATT, 500-MHZ WITH 10-DB POWER GAIN. |
FEB 1968 |
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| Authors:
J. F. O'Brien; G. Hodowanec; RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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 | The objective was to produce a transistor capable of delivering 50 watts of output power at 500 megahertz with 10-dB power gain and 50-percent efficiency. The fabrication of a metal-oxide-metal transistor employing integral leads was achieved. Processing problems imposed limitations in device fabrication that required an alternate approach. Advances in technology and package design were applied to a device in which overlay technology and double-base geometry with integral leads were ... |
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| 300C SEMICONDUCTOR FOR POWER DEVICES. |
FEB 1968 |
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| Authors:
R. E. Enstrom; L. A. Krassner; RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| The successful design and development of a 50-ampere rectifier with reverse breakdown over 150 volts, operable in a 300C ambient temperature, is described. High-operating-temperature and reverse-breakdown requirements led to the choice of gallium arsenide and gallium arsenide-phosphide as the semiconductor materials employed. The rectifier junctions were grown by vapor phase epitaxial techniques, and very-high breakdown voltage was achieved. Growth of defect-free large-area (0.175-mil diameter) junctions was a major accomplishment. A ... |
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| DEVELOPMENT OF A 1-WATT, 2 GHZ SILICON UHF POWER TRANSISTOR. |
FEB 1968 |
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| Authors:
P. L. McGeough; H. C. Lee; RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| A 1-watt, 2-gigahertz device, coaxial transistor, having 6- to 7-dB power gain and 30- to 40-percent collector efficiency was developed in this program. This significant increase in UHF device performance is the result of technology developed during shallow diffusion and epitaxial material studies. The transistor is enclosed in a hermetic coaxial package, developed during the package study phase of this program. (Author) |
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| DEVELOPMENT OF A 1 KW, 1 KV AUDIO TRANSISTOR AND DRIVER TRANSISTOR FOR SONAR APPLICATIONS. |
15 DEC 1967 |
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| Authors:
RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| Progress made in the fabrication of output transistors is reviewed. Results of transistor pressings are discussed and the modified package used for design II pellets is described. A thermal resistance measurement set capable of measuring values below 0.1 C/watt is also described. Data on nine driver transistors and the characteristics of a packaged output device are given. Two of the driver units had BV sub CEO (sus) greater than 600 ... |
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| DEVELOPMENT OF A 1 KW, 1 KV AUDIO TRANSISTOR AND DRIVER TRANSISTOR FOR SONAR APPLICATIONS. |
15 OCT 1967 |
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| Authors:
RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| Efforts were continued on a program to develop and fabricate an audio output power transistor and a suitable driver power transistor for sonar applications. Problems encountered in the epitaxial refill of the emitter-base overlay wafer are discussed in detail. Experiments on the glassing of high-voltage collector junctions are described which show that the problem of degradation of voltage in glassing is due to positive charge formation in the oxide-silicon nitride ... |
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| 300 C SEMICONDUCTOR FOR POWER DEVICES. |
SEP 1967 |
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| Authors:
L. Krassner; RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| The purpose of this contract is to design and construct a 50-ampere rectifier capable of operating at an ambient temperature of 300 C. The rectifier must be capable of withstanding a peak inverse voltage of 150 volts. Vapor-phase, epitaxial p-n junctions have been grown of gallium arsenide and gallium arsenide-phosphide alloys. Results were not always consistent, particularly on large-area rectifier pellets. Part of the problem, at least, was related to ... |
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| DEVELOPMENT OF A 1 KW, 1 KV AUDIO TRANSISTOR AND DRIVER TRANSISTOR FOR SONAR APPLICATIONS. |
01 JUL 1967 |
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| Authors:
RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| The technical approaches to be taken for the development of a 1 kilowatt, 1 kilovolt audio transistor and a suitable driver transistor are discussed. Initial device designs and processing conditions are described. Results of output transistor pressings are given. These results indicate that high voltages are possible with the fused overlay process but that these voltages, in general, degrade during the glassing sequence. Metal-oxide semiconductor capacitance voltage measurements are presented ... |
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| DEVELOPMENT OF A 1-WATT, 2GHZ SILICON UHF POWER TRANSISTOR. |
JUN 1967 |
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| Authors:
E. T. Casterline; H. C. Lee; RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| A new set of sequential single site diffusion photomasks was received and evaluated. The photomasks are suitable for fabricating devices, and diffusion runs have been started. Devices fabricated with a substantially different capacitance-versus-voltage curve were characterized at 2-gigahertz and exhibited improved performance. In the area of circuit evaluation and optimization, work has begun on a 2-gigahertz amplifier which will require no external tuning strips or bias tees. Power gain as ... |
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| TRANSISTOR, VHF, SILICON, POWER, LINEAR, 100-WATT PEP, 76-MHZ WITH 10-DB POWER GAIN. |
JUN 1967 |
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| Authors:
F. L. Katnack; RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| The design of high-frequency, high-power transistors for use in single side-band equipment is discussed and an empirical relation between base area and power gain is presented. Based on these data, a design for a 100-watt (PEP) at 76-megahertz transistor is given. This transistor design is an overlay construction having diffused ballast resistors in series with each emitter region. The fabrication of this device with integral leads and assembly in a ... |
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| TRANSISTOR, UHF, SILICON, POWER, LINEAR, 50-WATT, 500-MHZ WITH 10-DB POWER GAIN. |
MAY 1967 |
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| Authors:
J. F. O'Brien; RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| The objective of this effort is to produce a transistor capable of delivering 50 watts of output power at 500 megahertz with 10-dB power gain and 50-percent efficiency. The objective will be achieved by using a metal-oxide-metal overlay structure employing integral leads. A proposed structure with the new device geometry is presented. Design characteristics are described. The advantages of employing metal-oxide-metal and integral lead technology are shown. Device development is ... |
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| 300 C SEMICONDUCTOR FOR POWER DEVICES. |
MAY 1967 |
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| Authors:
L. Krassner; R. E. Enstrom; RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| During the period covering this report, vapor-phase, epitaxial p-n junctions were grown in gallium arsenide, and the effects of several parameters, including temperature and substrate condition on the junction quality, were studied. Microplasmas still limit the breakdown of large-area diodes (0.100-inch diameter) but for diodes of smaller size (0.030-inch diameter) the breakdown is now limited only by material purity. Improved procedures for etching gallium-arsenide junctions were developed so that the ... |
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| TRANSISTOR, FIELD-EFFECT, HF, SILICON, POWER, LINEAR, 10-MEGAHERTZ, 5-WATT-PEP. |
MAR 1967 |
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| Authors:
M. M. Mitchell; N. H. Ditrick; RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| The purpose of this effort is to develop a 5-watt linear MOS power transistor for single-sideband-amplifier applications. The transistor must operate at 10 megahertz from a 28-volt power supply with an efficiency of at least 35 percent and with less than -35 dB intermodulation distortion. Substantial effort has been directed toward development of a process for obtaining high drain-to-source breakdown voltage in MOS devices. Experimental masks were designed for a ... |
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| DEVELOPMENT AND EVALUATION OF TRANSISTOR, FIELD EFFECT, INSULATED GATE, 400-MEGAHERTZ AMPLIFIER. |
FEB 1967 |
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| Authors:
N. H. Ditrick; M. M. Mitchell; RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| A dual-gate tetrode n-channel MOS transistor with reduced channel dimensions has been developed. The reduced channel dimensions, 0.1 mil long by 10.0 mils wide, enable good power gain and noise performance at 400 megahertz. Cross-modulation distortion performance is excellent, comparable in all respects to low-frequency tetrodes developed under a previous contract. The major disadvantage of high-frequency-tetrode performance is the capacitance between second gate and center region, which reduces high-frequency power ... |
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| DEVELOPMENT OF A 1-WATT, 2-GHZ SILICON UHF POWER TRANSISTOR. |
FEB 1967 |
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| Authors:
E. T. Casterline; H. C. Lee; RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| The purpose of this effort is to design and develop a 1-watt, 2-gigahertz silicon transistor having a minimum efficiency of 50 percent and a power gain of 10 dB. Considerable effort was placed on mechanical and environmental testing of the modified type-A coaxial package. Some difficulty was experienced in developing a process for hermetically sealing the modified package. The problem areas have been determined, and new methods are under investigation. ... |
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| DEVELOPMENT OF A 1-WATT, 2-GHZ SILICON UHF POWER TRANSISTOR. |
JAN 1967 |
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| Authors:
P. L. McGeough; H. C. Lee; RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| This report concentrated on the study of the effects of P+ diffusion penetration on UHF performance. A comparison of the results obtained at 2 gigahertz indicated improved performance using the deeper P+ diffusion depth. The design calculations for the required photomasks were completed; a modification of the Type A coaxial package was introduced that provides an increase in the frequency of operation of the packaged transistor; and a new coaxial ... |
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| 300 C SEMICONDUCTOR FOR POWER DEVICES. |
JAN 1967 |
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| Authors:
L. Krassner; R. E. Enstrom; RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| Gallium arsenide was chosen as the material for making the 300C operating rectifier. It was shown that epitaxial layers with high-voltage breakdown could be prepared, although not reproducibly. A vapor-glassing surface treatment was worked out also, and a suitable package was designed and ordered. During the period covered by this report, it was found that imperfections in the epitaxial layers caused premature breakdown, and work was started to relate this ... |
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| DEVELOPMENT OF A REMOTE CUTOFF MOS FIELD EFFECT TRANSISTOR. |
01 DEC 1966 |
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| Authors:
RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| Remote-cutoff MOS devices that were designed exceeded the goals set at the beginning of this contract in nearly all of the electrical performance characteristics. Fifteen samples of Device I (15-kilohertz to 30-megahertz operation) and 15 samples of Device II (200-megahertz to 400-megahertz operation) were delivered to the Department of Navy. Device II had a median power gain of 16.8 dB at 400 megahertz and a median noise figure of 3.7 ... |
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| TRANSISTOR, VHF, SILICON, POWER, LINEAR, 30-MHZ, 100 WATTS PEP. |
DEC 1966 |
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| Authors:
R. Rosenzweig; Z. F. Chang; RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| This report describes the work performed in the development and fabrication of a linear amplifier transistor with a goal of 100 watts PEP at 30 megahertz with -30 dB intermodulation distortion, 15-dB power gain, and efficiency greater than 35 percent. The transistor structure incorporates diffused ballast resistance for second-breakdown protection. A temperature-compensating diode has been placed inside the transistor package to provide Class AB bias-point control. The package is a ... |
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| 300 C SEMICONDUCTOR FOR POWER DEVICES. |
OCT 1966 |
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| Authors:
L. A. Murray; R. E. Enstrom; RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| The purpose of this study is to design and construct a 50-ampere rectifier capable of operating at an ambient temperature of 300 C. The rectifier must be capable of withstanding a peak inverse voltage of 150 volts. Gallium arsenide was selected as the currently most promising material for construction of a 50-ampere, 150-volt PIV, 300 C operating rectifier. N+-N-P+ structures were grown epitaxially, and 50-mil-diameter mesa diodes were prepared. As ... |
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| DEVELOPMENT OF A 1 WATT, 2GHZ SILICON UHF POWER TRANSISTOR. |
AUG 1966 |
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| Authors:
P. L. McGeough; H. C. Lee; RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| Efforts were continued on a program to design and develop a 1-watt, 2-gigahertz silicon transistor having a minimum of 50 percent efficiency and 10 dB power gain. Major effort was concentrated on continued epitaxial layer and diffusion profile studies. Shallow diffusion techniques have been developed which result in a reproducible diffusion process. Studies of the effect of p diffusion depth on UHF performance are presently being performed. The epitaxial layer ... |
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| DEVELOPMENT OF A 1 WATT, 2 GHZ SILICON UHF POWER TRANSISTOR. |
JUN 1966 |
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| Authors:
Patrick L. McGeough; H. C. Lee; RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| The influence of epitaxial layer material and shallow diffusions on microwave device performance is studied. Results of these investigations obtained to date reveal that: The use of thin epitaxial material yields devices with improved current handling capability and decreased gain-bandwidth product fall-off with current. Shallow diffusion depths permit the use of narrow base widths which possess a punch-through voltage that is compatible with the collector-base breakdown voltage of the device. ... |
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| DEVELOPMENT OF INTEGRATED CIRCUITS UTILIZING COMPLEMENTARY TRANSISTORS. |
31 MAR 1966 |
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| Authors:
RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| Operating curves for the boron doped, phosphorus doped and undoped silane systems have been established. Substrates housing opposite conductivity (P and N) regions have been fabricated during this quarter and complementary fabrication has begun. The complementary symmetry amplifier has been transformed to a monolithic layout and masks have been ordered. (Author) |
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| TRANSISTOR, VHF, SILICON, POWER, LINEAR, 30-MHZ, 100 WATTS PEP. |
31 MAR 1966 |
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| Authors:
R. Rosenzweig; Z. F. Chang; RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| Single sideband performance has been obtained on the TA2758 transistor packaged in a radial lead stud package. Typical state-of-the-art devices are capable of delivering 75 watts PEP with -30dB intermodulation distortion and 11.5dB power gain with 55 percent collector efficiency. Radial lead stud packages have been successfully fabricated with thermal isolation being achieved by a beryllium ceramic substrate. Sample transistors have been encapsulated with silicone resins. Wafer processing problems that ... |
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| TRANSISTOR, FIELD EFFECT, INSULATOR GATE, 100-MC AMPLIFIER. |
MAR 1966 |
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| Authors:
R. W. Ahrons; R. H. Dawson; M. M. Mitchell; N. H. Ditrick; RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| The tetrode MOS transistor was developed as a 100-megacycle amplifier with low power dissipation. In an RF circuit, the device shows excellent cross modulation characteristics over a large attenuation range. With respect to power gain noise figure, RF stability, and long term stability, the tetrode is as good or better than full or partial gate MOS triodes. The device was designed to minimize parasitic capacitances resulting from gate overlap by ... |
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| DEVELOPMENT OF A 1 WATT, 2KMHZ SILICON UHF POWER TRANSISTOR. |
FEB 1966 |
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| Authors:
D. S. Jacobson; P. L. McGeough; RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| Major effort was concentrated on experimental studies of the effects of epitaxial layer variations on microwave performance. These effects will significantly influence both the device surface and cross-sectional geometry and must be characterized before the required photomasks can be designed. The use of thin epitaxial layers (0.3 mil) resulted in a decrease in fT fall-off with current and a 20% improvement in 1000 Mc amplifier performance. A median output power ... |
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| TRANSISTOR, VHF, SILICON, POWER, LINEAR, 30-MHZ, 100 WATTS PEP. |
30 NOV 1965 |
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| Authors:
R. Rosenzweig; RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| This report describes the development work performed on the 100-watt, 30-megahertz, single sideband, VHF silicon power transistor. The first set of photomasks were received; diffusion runs were initiated, using these masks, and initial pellets were produced; transistors in temporary TO-3 cases were evaluated to obtain static data; and power dissipation measurements were made on devices mounted in these cases. (Author) |
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| DEVELOPMENT OF A REMOTE CUTOFF MOS FIELD EFFECT TRANSISTOR. |
10 AUG 1965 |
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| Authors:
RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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| The purpose of this program is to develop an advanced MOS field effect transistor having a tailored remote cutoff characteristic for decreasing cross modulation distortion and to provide improved AGC for communications receivers. The devices developed under this program are to be optimized for two frequency ranges: 14 Kc to 30 Mc and 200 Mc to 400 Mc. The stepped oxide remote cutoff MOS is superior to the ordinary triode ... |
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Reports by Corporate Author
