This study of defects and disorder in Si has focussed on models of excitation near defects in the crystal, in structurally disordered amorphous material, and at interfaces between crystal and amorphous material. The first section deals with the vibrations of Si slabs with (111) faces subject to varying boundary conditions. In particular slabs with free boundaries, with dangling bonds saturated by hydrogen, and slabs embedded in amorphous material were considered. ...
Three rather separate projects related to the properties of defects in crystals have been pursued during the year. (1) The effect of defects on the thermal expansion of crystals. It has been shown that defects with low frequency resonances in the vibrational spectrum may show anomalously large thermal expansion at low temperatures which should be readily observable. The mean square displacement of such impurities is large and this accentuates the ...
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