GLASGOW UNIV (UNITED KINGDOM) DEPT OF ELECTRONICS AND ELECTRICAL ENGINEERING
Click on the titles below to find US government-authored or -collected reports written by GLASGOW UNIV (UNITED KINGDOM) DEPT OF ELECTRONICS AND ELECTRICAL ENGINEERING
A comparison of full quantum device simulation with semi-classical methods is made for an unintended single atomistic dopant at various locations in a 10 nm double gate MOSFET transistor. The density gradient method comes closest to the non-equilibrium Green function results for fails seriously when the unwanted charge is located well-within the channel.
The performance potential of n-type implant free In(0.25)Ga(0.75)As MOSFETs with high-kappa dielectric is investigated using ensemble Monte Carlo device simulations. The implant free MOSFET concept takes advantage of the high mobility in III-V materials to allow operation at very high speed and low power. A 100 nm gate length implant free In(0.25)Ga(0.75)As MOSFET with a layer structure derived from heterojunction transistors may deliver a drive current of 1800 A/m and ...
This report results from a contract tasking University of Glasgow as follows: The contractor will investigate quantum cascade lasers fabricated using a new native oxide technique called planar selective wet oxide fabrication. This technique will be employed to fabricate arrays of such lasers on a single chip to obtain high powered laser bars operating at wavelengths around five microns.
This research investigated the conductance of the quantum ballistic transport pinched off in equilibrium. The effect of magnetoresistance sign reversing with reversing the current flow or magnetic field direction in nonlinear region has been found.
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