To potentially improve device performance, we attempted to grow gallium nitride (GaN) films with better crystalline quality (fewer mismatch dislocations) using a tantalum carbide (TaC) substrate, which is more closely lattice matched to GaN than currently used substrates. We created the TaC substrate, using pulse laser deposition (PLD) of TaC onto (0001) SiC substrates at tilde 1000 deg C, and grew GaN films, using metal organic chemical vapor deposition (MOCVD). ...
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