| ICCG-10: International Conference on Crystal Growth (10th) Held in San Diego, California on August 16-21, 1992. Oral Presentation Abstracts |
OCT 92 |
313 pages |
| Authors:
August F. Witt; KURTZ LABS YELLOW SPRINGS OH
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 | The conference was held as scheduled. Papers presented at the conference included those on fundamentals on nucleation and growth, crystal growth mechanisms, convection and segregation, morphological stability, dendrites and pattern formation, non-linear optic crystals, oxide crystal growth, II-VI materials, laser materials, miscellaneous chaleogenides, silicon/ germanium, wide bandgap materials, halides, superconductors, refractory compounds, biomaterials, and gel growth. |
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| Development of Model Based Magnetic LP-LEC Growth of Large Diameter GaAs |
14 JUN 1992 |
22 pages |
| Authors:
August F. Witt; MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF MATERIALS SCIENCE AND ENGINEERING
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| The objective of this research was to explore the range of analytical information on the defect structure of doped and semi-insulating GaAs obtainable from computational, non-invasive, near infrared absorption analysis. Motivation for this research was provided by the realization that the establishment of meaningful property specifications for device materials is contingent on noninvasive defect analysis executable in a fabline environment. Infrared absorption measurements on a micro- and macro-scale in combination ... |
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| Development of Model Based Magnetic LP-LEC Growth Large Diameter GaAs |
28 NOV 90 |
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| Authors:
August F. Witt; MASSACHUSETTS INST OF TECH CAMBRIDGE
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 | The stated objectives of this research effort were directed at: (1) The establishment of magnetic LP-LEC growth capability with diameters approaching 4 inches; (2) The design of heat and mass transfer control systems required for optimization of growth with magnetic melt stabilization, and (3) Development of a model-based growth control scheme which includes complementary knowledge-based system inputs for seeding, shouldering, and growth termination. A non-invasive wafer inspection system has been ... |
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| LEC Growth of InP with Magnetic Field Assisted Melt Stabilization and Heat Transfer Control |
FEB 88 |
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| Authors:
August F. Witt; MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF MATERIALS SCIENCE AND ENGINEERIN G
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| The research focuses on the optimization of InP growth by the LEC technique using magnetic fields for melt stabilization and heat pipes for the control of critical thermal fields. Keywords: Crystal growth, Liquid encapsulated Czochralski, Melt, Convection, Segregation, Melt stabilization, Magnetic fields, Heat transfer control. (mjm) |
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| Growth of Cadmium Telluride under Controlled Heat Transfer Conditions |
11 JUN 86 |
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| Authors:
August F. Witt; MASSACHUSETTS INST OF TECH CAMBRIDGE MATERIALS PROCESSING CENTER
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| The thrust of this research project was directed at the development of new approaches leading to growth of CdTe single crystals with improved crystalline and chemical perfection. In pursuit of this objective a theoretical analysis was made of the stability of the growth interface as a function of crystallographic orientation. Using the concept of dangling bond densities, it was found that experimentally observed solitary and lamellar twinning phenomena during growth ... |
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| Preparation of InP by Solution and Melt Growth Techniques |
SEP 1981 |
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| Authors:
August F. Witt; MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF MATERIALS SCIENCE AND ENGINEERING
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| A modified InP synthesis system has been designed, constructed and put into operation. Basic studies on InP growth have been initiated and deficiencies inherent to the growth system identified. The nature of the effects of liquid encapsulation has been studied using Ga-doped Ge as a model system. (Author) |
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| Preparation and Characterization of Infrared Materials. |
01 APR 1980 |
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| Authors:
August F. Witt; MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF MATERIALS SCIENCE AND ENGINEERING
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| The primary objectives of this research program were: (A) in broad terms, to advance the established processing techniques for growth of IR materials and to improve crystalline perfection and composition control achievable in single crystals to beyond the state of the art and in (B) specific terms; (growth of n-type InSb single crystals with uncontrolled microsegregation variations reduced to less than 10%, growth of heavily doped (Bi) InSb single crystals ... |
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