A natural IIa diamond was implanted with boron ions at a substrate temperature of 80K. Ohmic contacts (Mo/Au) were formed using a solid- state reaction process. Van der Pauw resistivity/Hall measurements were taken as a function of temperature from room temperature to nearly 600 C. Heating to approximately 350 C was necessary to stabilize resistance values to over 3.4 M omega/sq and 1.3 M omega/sq for the unimplanted and implanted ...
This report discusses the progress made during the third year of the program, 4 January 1972 through 3 January 1973, which was devoted to conducting ion beam focusing experiments and to performing system modifications, as they were required, to improve the quality (e.g., stability) of the focused ion beam. The development of the tiny beam system progressed to the point at which fine focusing with low noise was demonstrated. In ...
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