Fabrication of nonvolatile memories utilizing ferroelectric polarization charge of lead zirconate-titanate (PZT) thin film Capacitors requires the integration of the PZT capacitor process with the semiconductor device processes. This paper discusses the development of enabling process technology for integration of PZT capacitors with GaAs junction field-effect transistors (JFET) of, a GaAs wafer for the fabrication of a GaAs ferroelectric random access memory (FERRAM). Individual processes for PZT capacitors and GaAs ...
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