SWITCHABLE POLARIZATION CAN BE SUPPRESSED IN PB(ZR,TI)O(3) THIN FILMS BY OPTICAL, THERMAL, ELECTRICAL, AND REDUCING PROCESSES. THE OPTICAL SUPPRESSION EFFECT OCCURS BY BIASING THE FERROELECTRIC NEAR THE SWITCHING THRESHOLD AND ILLUMINATING THE MATERIAL WITH BAND GAP LIGHT; THE THERMAL SUPPRESSION EFFECT OCCURS BY BIASING THE FERROELECTRIC NEAR THE SWITCHING THRESHOLD AND HEATING THE MATERIAL TO APPROXIMATELY 100 DEGREE C. THE ELECTRICITY INDUCED SUPPRESSION EFFECT, KNOWN AS ELECTRICAL FATIGUE, OCCURS BY ...
PB(ZR,TI)O(3) AND (PB,LA)9ZR,TI)O(3) THIN FILMS AND BULK CERAMICS ARE SHOWN TO EXHIBIT TWO DISTINCT, BUT RELATED TYPES OF PHOTOINDUCED CHANGES IN THEIR HYSTERESIS BEHAVIOR: (1) A PHOTOINDUCED SUPPRESION OF THE SWITCHABLE POLARIZATIION AND (2) A PHOTOINDUCED VOLTAGE SHIFT. BOTH EFFEECTS GIVE RISE TO STABLE AND REPRODUCIBLE HYSTERISIS CHANGES AND, THUS. EITHER COULD BE THE BASIS OF AN OPTICAL
We have explored the nature of the silicon dangling-bond center in amorphous hydrogenated silicon nitride (a-SiN(x):H) thin films, and its relationship to the charge trapping centers using electron paramagnetic resonance (EPR) and capacitance-voltage (C-V) measurements. We have investigated the quantitative relationship between the concentration of silicon dangling bonds using EPR and the concentration of charge traps, measured by C-V measurements, for both UV-illuminated and unilluminated a-SiN(x):H thin films subjected to ...
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