The influence of three typical annealing cycles normally used in IGFET processing on as-fabricated and post-irradiated gate oxide defect levels was studied. These cycles were: 1) 'post-oxidation' for 5 minutes at 1000 C in argon, 2) 'post-polysilicon' for 30 minutes at 500 C in forming gas, and 3) 'post-metallization for 30 minutes at 400 C in hydrogen. Gate oxide defects were characterized using optically assisted electron injection of n-channel polysilicon-gated ...
The objective of this investigation is to determine the status of V/STOL aerodynamics technology; evaluating the capabilities and limitations of various techniques and the validity of methods through correlations of predictions with wind tunnel and/or flight test results. This interim report presents the results of the first phase of this effort; a survey and assessment of published methods and test results and a survey of industry applied methods and technology ...
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