The midinfrared 7 ML InAs/8 ML GaSb superlattices (SLs) were grown by molecular beam epitaxy at growth temperatures between 370 and 430 deg C in order to study the intrinsic characteristic of background carriers. Grown SLs were all residual p type with carrier densities in the low 10(exp 11)/sq cm, and a minimum density of 1.8 x 10(exp 11)/sq cm was obtained from the SL grown at 400 deg C. ...
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