Using a real-time Green's functions formalism, we investigate the influence of depletion charge scattering on the room temperature mobility in scaled silicon metal-oxide-semiconductor field-effect transistors and low- temperature transport in In(0.4)Al(0.6)As-In(0.4)Ga(0.6)As modulation doped heterostructures. Our simulation results suggest that depletion charge scattering, which is usually ignored, has considerable impact on the electron transport in silicon inversion layers near the threshold gate voltage, even at room temperature. We also find that ...
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