| Monolithically Integrated Coupled-Laser All-Optical Switching and Routing Elements and Circuits |
FEB 1999 |
17 pages |
| Authors:
F. Robert; C. L. Tang; CORNELL UNIV ITHACA NY
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 | Previous work on monolithically integrated coupled-laser all-optical switching elements and circuits showed that the threshold current for the in- plane lasers fabricated from wafers designed for vertical cavity surface emitting lasers (VCSEL) were too high to permit long-term room temperature continuous wave (cw) operation. Results on experiments aimed at reducing the threshold current for the coupled in-plane lasers are reported. Two approaches were evaluated: ... |
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| 1:N Space Division Switches for Optical Routing, Reconfigurable Interconnections, and Time and Wavelength-Division Switching Applications |
MAY 1998 |
16 pages |
| Authors:
D. B. Shire; C. L. Tang; CORNELL UNIV ITHACA NY
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| We report the first observation of two-mode intensity bistability in intracavity-coupled in-plane lasers and oxide-confined vertical-cavity surface emitting lasers (VCSELs) operating under room-temperature continuous wave (CW) conditions. These devices have been integrated in a monolithic all-optical 1xN routing switch. The VCSEL sections act as output couplers for modulation signals introduced to the main ridge-waveguide in-plane laser or the side in-plane control lasers, and the combined devices are capable of time-division ... |
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| Integrated, Bistable Gain-Quenched Vertical Cavity/In-Plane Lasers for Smart Pixel Switching, Free-Space Interconnects, and Optical Memory Applications |
OCT 96 |
27 pages |
| Authors:
D. B. Shire; C. L. Tang; CORNELL UNIV ITHACA NY
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| New experimental results demonstrate optical bistability and two- input NOR gate operation in intracavity-coupled in-plane and vertical cavity lasers (VCSELs) fabricated from the same epitaxial material. Hysteresis is present in the VCSEL Output power vs. in-plane laser input power characteristics, and an optical memory effect is observed in the combined device. Also reported is the experimental demonstration of monolithic All- optical 1:N routing switches using CW gain-quenched, intracavity-coupled in- plane ... |
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| Evaluation of Gain Quenching Vertical Cavity Lasers with In-Plane Lasers for Smart Pixel Switching |
AUG 95 |
31 pages |
| Authors:
D. B. Shire; C. L. Tang; CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING
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| A detailed study of monolithically integrated, intracavity coupled in plane and vertical cavity surface emitting lasers (VCSELs) for smart pixel switching is performed. It is shown that the extent to which the VCSEL section output is quenched depends on the overlap of the two lasers' gain regions, and on the in plane laser bias current. Complete quenching of the VCSEL output to a small spontaneous emission level is demonstrated under ... |
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| Evaluation of the Current Biased Integrated Optical Processors Based on Bistable Dode Elements |
JUL 94 |
20 pages |
| Authors:
C. L. Tang; P. D. Swanson; M. A. Parker; S. I. Libby; CORNELL UNIV ITHACA NY
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| Three optical switching elements have been designed, fabricated and tested for use in an integrated, optical signal processor. The first, and optical NOR logic gate, uses gain quenching as a means of allowing one (or more) light beam (s) to control the output light. This technique, along with the use of a two-pad bistable output laser, is used in the demonstration of the feasibility of the second device, an all ... |
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| Growth, Characterization and Applications of Beta-Barium Borate and Related Crystals |
31 OCT 93 |
120 pages |
| Authors:
C. L. Tang; CORNELL UNIV ITHACA NY
|
| Emphasis of our program during the past three years has been on improving the size and quality of Beta-barium borate (BBO) crystal; developing the growth recipe for lithium triborate crystal (LBO); automation of the growth process of BBO and LBO; characterization of LBO; developing optical parametric oscillators using BBO, LBO, and new nonlinear crystals such as KTiOPO4 (KTP), KTA (arsenate), C(Cs)TA, and R(Rb)TA; and finally helping to establish commercial sources ... |
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| Beta-Barium Borate Optical Parametric Oscillator |
15 AUG 91 |
6 pages |
| Authors:
C. L. Tang; CORNELL UNIV ITHACA NY
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| A Beta-Barium Borate Optical Parametric Oscillator (BBO OPO) has been constructed and shipped to the Army laboratory at White Sands. This OPO is a truly continuously tunable source with a very large spectral coverage. It is pumped at the third harmonic of Nd:YAG or 335 nm. The output is continuously tunable over the entire spectral range from 450 nm to 2.5 microns with relatively high efficiency. The tuning is completely ... |
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| Growth, Characterization and Applications of Beta-Barium Borate and Related Crystals |
31 MAY 91 |
6 pages |
| Authors:
C. L. Tang; CORNELL UNIV ITHACA NY
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| Emphasis of our program during the past year has been on improving the size and quality of beta-barium borate (BBO) crystal, develop the growth recipe for lithium triborate crystal (LBO), characterization of LBO, develop BBO optical parametric oscillators, and finally help establish commercial sources of these crystals. Progress was made in all these areas. First, on the BBO crystal growth technology, we have now succeeded in growing relatively large single ... |
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| Microwave Semiconductor Research-Materials, Devices and Circuits |
MAR 87 |
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| Authors:
L. F. Eastman; J. M. Ballantyne; C. L. Tang; W. H. Ku; J. P. Krusius; CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING
|
 | This program covers the growth and assessment of gallium arsenide and related compounds and alloys for use in microwave, millimeter wave, and optical devices. It also covers the processing of the material into devices, the testing of the devices, and the theoretical modeling of carrier transport in these devices. Both molecular beam epitaxy (MBE) and organometallic vapor phase epitaxy (OMVPE) are used for growth. The following specific tasks are pursued: ... |
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| Microwave Semiconductor Research-Materials, Devices and Circuits |
MAR 87 |
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| Authors:
L. F. Eastman; J. M. Ballantyne; C. L. Tang; W. H. Ku; J. P. Krusius; CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING
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| This program covers the growth and assessment of gallium arsenide and related compounds and alloys for use in microwave, millimeter wave, and optical devices. It also covers the processing of the material into devices, the testing of the devices, and the theoretical modeling of carrier transport in these devices. Both molecular beam epitaxy (MBE) and organometallic vapor phase epitaxy (OMVPE) are used for growth. The following specific tasks are pursued: ... |
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| Ageing-Time Dependence of Mechanical Properties of an Elastomeric Glass |
01 OCT 85 |
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| Authors:
K. D. Pae; K. Vijayan; C. L. Tang; RUTGERS - THE STATE UNIV PISCATAWAY NJ HIGH PRESSURE MATERIALS RESEARCH LAB
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| Compressive stress-strain curves of two different glasses of a polyurethane based elastomer have been obtained at 3 Kbar and -5.5 C as a function of ageing time. The glasses were formed by two different perturbation jumps of pressure and temperature. The shape and the size of the curves depended on the path and ageing time. Young's modulus increased with ageing time and represents a good mechanical parameter for determining relaxation ... |
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| Effect of Simple Stress on the Glass Transition of Polymers at High Pressure |
01 OCT 85 |
31 pages |
| Authors:
K. D. Pae; C. L. Tang; K. Vijayan; RUTGERS - THE STATE UNIV PISCATAWAY NJ HIGH PRESSURE MATERIALS RESEARCH LAB
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| Experimental studies showed the yield strength in tension, compression, and shear in the rubbery and the glassy states increased with increasing hydrostatic pressure. Moreover, the Young's modulus also increased with pressure and the amount of the increase across the glass transition temperature (T sub g) at a given pressure can be as large as three orders of magnitude in case of elastomers. An extension of Gibbs-Dimarzio theory is proposed to ... |
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| Microwave Semiconductor Research - Materials, Devices and Circuits and Gallium Arsenide Ballistic Electron Transistors |
APR 85 |
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| Authors:
L. F. Eastman; D. W. Woodard; G. W. Wicks; J. Ballantyne; C. L. Tang; CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING
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| This program covers the growth and assessment of Gallium Arsenide, and related compounds and alloys, for use in microwave, millimeter, and optical devices. It also covers the processing of the material into devices, and the testing of the devices. It also covers the processing of the material into devices, and the testing of the devices. Both molecular beam epitaxy (MBE) and organo-metallic vapor phase epitaxy (OMVPE) are used for growth. ... |
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| Pressure-Dependence of Glass Transition Temperature of Elastomeric Glasses |
01 MAY 1984 |
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| Authors:
K. D. Pae; C. L. Tang; E. S. Shin; RUTGERS - THE STATE UNIV PISCATAWAY NJ HIGH PRESSURE MATERIALS RESEARCH LAB
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| Pressure dependence of the glass transition temperature (T sub g) of two elastomers, Solithane 113 and 3,3-Bis(azidomethyl)oxetane/tetrahydrofuran (BAMO/THF) has been determined, employing high pressure differential thermal analysis (HP-DTA) and dielectric techniques, up to 8.5 Kbar. The glasses of the elastomers were named the specific (or P sub i - glass) or the general glass depending on how the glasses were formed. A P sub i - glass was formed by ... |
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| Microwave, Semiconductor Research - Materials, Devices and Circuits |
MAR 1984 |
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| Authors:
L. F. Eastman; D. W. Woodard; G. W. Wicks; J. Ballantyne; C. L. Tang; CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING
|
| This program covers the growth and assessment of Gallium Arsenide, and related compounds and alloys, for use in microwave, millimeter, and optical devices. It also covers the processing of the material into devices, and the testing of the devices. Both molecular beam epitaxy (MBE) and organo-metallic vapor phase epitaxy (OMVPE) are used for growth. Materials assessment is included. Short modulation doped heterojunction transistors, as well as ballistic electron vertical FETs ... |
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| Program on Electrically Tunable Semiconductor Laser Source for Optical Fiber Sensors |
30 JUL 1982 |
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| Authors:
C. L. Tang; A. Olsson; CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING
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| The objective of the program was to develop an electrically tunable semiconductor laser. This laser was to have a smooth tuning curve and is to be electrically tunable over a large spectral range and extremely rapidly tunable. A possible application of such a laser was as the basic tunable laser source of optical fiber sensors. |
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| Line Strengths and Radiative Lifetimes for NeII, |
1973 |
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| Authors:
D. Hodges; H. Marantz; C. L. Tang; CORNELL UNIV ITHACA N Y MATERIALS SCIENCE CENTER
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| Extensive spontaneous emission data on NeII has been obtained using a CW neon laser discharge as the spectroscopic source. The measured branching ratios are used to evaluate the accuracies of previous determinations of NeII 3p-3s and 3d-3p line strengths. The results show that some of the previously tabulated line strength values are clearly in need of revision. New determinations of the line strengths for the NeII 3p-3s, 3d-3p, and 4s-3p ... |
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| Spontaneous Parametric Scattering of Light in LiIO3, |
1969 |
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| Authors:
A. J. Campillo; C. L. Tang; CORNELL UNIV ITHACA N Y MATERIALS SCIENCE CENTER
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| CW spontaneous parametric scattering in LiIO3 has been observed. The results show that the nonlinear coefficient chi(31) for LiIO3 is about 18 x 10 to the minus 9th power esu, in agreement with the second harmonic generation results of Nash et al but three times smaller than that given by Nath and Haussuhl. The ordinary index of refraction curve for this crystal has also been determined from 1.2 micrometer past ... |
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| Measurement of the Transition Moment by the Optical Transient Nutation Effect, |
1968 |
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| Authors:
G. B. Hocker; C. L. Tang; CORNELL UNIV ITHACA N Y LAB OF PLASMA STUDIES
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| The observation of the optical transient nutation effect in SF6 if found to be greatly facilitated by cooling the gas to dry ice temperature; similar improvement is also expected in the observation of the self-induced transparency effect and the photon echo effect in this gas. The improved experimental results demonstrate that it is possible to determine thr transition moment of optical transitions directly on the basis of the optical nutation ... |
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| Phase-Locking of Laser Oscillators by Injected Signal. |
JAN 1967 |
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| Authors:
C. L. Tang; H. Statz; CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING
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| CHARACTERISTICS OF THE STOKES EMISSION IN THE STIMULATED BRILLOUIN SCATTERING PROCESS, |
30 OCT 1966 |
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| Authors:
C. L. Tang; CORNELL UNIV ITHACA N Y SCHOOL OF ELECTRICAL ENGINEERING
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| The characteristics of the Stokes emission in the stimulated Brillouin scattering of intense laser light in non-focusing media were studied in detail both theoretically and experimentally. Simple formulas that describe the various characteristics of the Stokes emission are obtained for the case when the attenuation length of the microwave phonons involved is much shorter than the interaction length and the distance over which the Stokes intensity in the medium changes ... |
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Reports by Author
