This paper employs high resolution x-ray diffractometry (HRXRD) and transmission electron microscopy (TEM) to study structural transformations in LT GaAs matrices doped with isovalent Sb impurity.
Accumulation of electrons and holes has been revealed by capacitance-voltage technique in As-cluster containing GaAs layers sandwiched between n-type or p-type GaAs buffers As a result of the majority carrier accumulation a large depletion region forms in adjacent buffers. Simulation of the capacitance-voltage characteristics based on numerical solution of the Poisson equaflon showed the concentration of accumulated charge carriers to be as high as (similar or equal) 1 x 10(exp12) ...
We have used, for the first time, isovalent delta-doping with antimony instead of indium to produce two-dimensional sheets of arsenic nano-clusters in GaAs films grown by molecular beam epitaxy (MBE) at low (200 C) ten%peratuw. The precipitation kinetics at Sb delta-layers is found to be enhanced as compared to that for In delta-doping. It provides an opportunity to improve the cluster spatial ordering. In addition, at early precipitation stages, the ...
Capacitance and conductance voltage characteristics have been measured at various frequencies and temperatures for a Schottky barrier structure containing three sheets of self assembled InAs quantum dots in an n-GaAs matrix. By changing the temperature and the frequency of the measuring signal, it is possible to control quantum dot part of capacitance of the structure. It was shown that analysis of the admittance spectra allows us to obtain information about ...
Reports by Author
