This project will cover three areas: (1) development of InN, (2) growth and properties of GaN/AlN nanostructures for intersubband transitions, and (3) GaN Quantum Dots for intersubband transitions. This project will develop nitride materials for use in the near and mid-infrared portions of the electromagnetic spectrum. USAF needs IR materials for infrared countermeasures, sensor protection, and sensor sources and detectors. The nitrides have the advantages of being rad-hard. They also ...
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