Temperature dependence of photoluminescence (PL) spectra of MBE grown ZnSe/CdSe/ZnSe QWs with 0.3-1.5 ML nominal CdSe thicknesses as well as MOCVD grown double heterostructures (DHS) GaN/InGaN/GaN with In content in the range 0.004-0.06 within the temperature interval 2-300 K has been studied. Much in common has been found in the PL band temperature behavior for both systems. Depending on the concentration of the solid solution the PL band maximum position ...
Exciton localization in quantum wells formed by solid solutions has been studied both theoretically and experimentally. The method for calculation of the density of fluctuation states below the edge of two-dimensional exciton band and the spectral density of exciton transitions is developed. The classification of states in respect to its migration properties and contribution to the luminescence processes has been carried out using the continual percolation theory. The shape of ...
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