A manufacturing methods project has been initiated to establish a pilot production line for metal nitride oxide semiconductors (MNOS) block oriented random access memory (BORAM) multichip hybrid circuits. During the past quarter the first set of engineering samples were delivered, and fabrication of the second set was initiated. Further experience was gained with a new low cost MNOS BORAM die. Hybrid circuit and memory card development progressed. In addition, transistor ...
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