| Lasing and Electro-Optic Properties of Quantum-Confined Structures Grown on Novel Index Surfaces |
JUN 2001 |
149 pages |
| Authors:
Arthur L. Smirl; IOWA UNIV IOWA CITY
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 | The broad objective on this project is to investigate the unique optical and optoelectronic properties of 110, 111 and 112-oriented multiple quantum wells (MQW's) and to study the ways in which strain and external optical fields can introduce crystallographic dependences to the optical properties of otherwise isotropic materials. Toward this end, we have demonstrated that dual- channel spectral interferometric techniques can be used to measure the amplitude, phase and polarization ... |
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| Effects of Crystallographic Orientation and Strain on Quantum Confined Structures and Devices |
15 APR 2001 |
148 pages |
| Authors:
Arthur L. Smirl; IOWA UNIV IOWA CITY
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| The majority of the heterostructures grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) over the last thirty years have been grown on substrates oriented in the 001 crystallographic direction. By comparison, there has been very little work on growth on other crystallographic axes or on applications of such structures. However, theoretical considerations (and several recent experiments) would indicate that unique and useful properties can be realized ... |
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| (11 IOTA)-Oriented Heterostructures and Devices: The Effects of Strain and Orientation |
15 MAR 2001 |
154 pages |
| Authors:
Arthur L. Smirl; IOWA UNIV IOWA CITY
|
| The broad objective on this project is to investigate the unique optical and optoelectronic properties of 110, 111 and 112-oriented multiple quantum wells (MQW's) and to study the ways in which strain and external optical fields can introduce crystallographic dependences to the optical properties of otherwise isotropic materials. Toward this end, we have demonstrated that dual- channel spectral interferometric techniques can be used to measure the amplitude, phase and polarization ... |
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| Nanosecond and Subnanosecond Investigations of Intrinsic Optical Limiting Mechanisms in Photorefractive and Semiconducting Materials |
15 APR 96 |
120 pages |
| Authors:
Arthur L. Smirl; Thomas F. Boggess; IOWA UNIV IOWA CITY CENTER FOR LASER SCIENCE AND ENGINEERING
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| As a part of the ARPA Eye & Sensor Protection Program, this project has been focused on the exploration of a variety of optical nonlinearities in materials, including semiconductors, organometallic compounds, and photorefractive media, that have potential applications in optical limiting devices. Much of the progress on this project was previously reported in an Interim Final Report (Report # NV-93-C08). This report specifically summarizes progress made on the study of ... |
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| PIEZOREFLECTANCE AS A SUPPLEMENT TO PHOTOREFLECTANCE FOR NONDESTRUCTIVE CHARACTERIZATION OF GAAS/AL(SUB X)GA(SUB 1-X) AS MULTIPLE QUANTUM WELLS |
NOV 88 |
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| Authors:
R. L. Tober; Arthur L. Smirl; Thomas F. Boggess; J. N. Schulman
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 | piezoreflectance is used to identify allowed and forbidden transitions in the spectra of as-grown 100 and 50 a gaas/al(sub x)ga(sub 1-x) as multiple quantum well samples from which no photoreflectance spectra suitable for characterization could be obtained. features in the piezoreflectance spectra are shown to result from excitonic transition by direct comparison with the absorbance measurements made on semitransparent regions of these samples. transition energies are extracted from the piezoreflectance ... |
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| Optically Induced Hot Electron Effects in Semiconductors. |
31 AUG 1978 |
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| Authors:
Arthur L. Smirl; NORTH TEXAS STATE UNIV DENTON DEPT OF PHYSICS
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| Progress is reported in using the high electric fields and ultrashort pulses from mode-locked lasers to study the temporal evolution of the saturable optical properties of semiconductors on a picosecond time scale. In these studies, the excite and probe technique is employed to obtain information concerning the ultrafast dynamics of photogenerated electron-hole plasmas. Germanium has been chosen for the initial investigations since its bandgap energy is comparable to but less ... |
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| Optically Induced Hot Electron Effects in Semiconductors. |
01 JUN 1978 |
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| Authors:
Arthur L. Smirl; NORTH TEXAS STATE UNIV DENTON DEPT OF PHYSICS
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| We report our progress in using the high electric fields and ultrashort pulses from mode-locked lasers to study the temporal evolution of the saturable optical properties of semiconductors on a picosecond time scale. In these studies, the excite and probe technique is employed to obtain information concerning the ultrafast dynamics of photogenerated electron-hole plasmas. Germanium has been chosen for the initial investigations since its bandgap energy is comparable to but ... |
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| Optically Induced Hot Electron Effects in Semiconductors. |
21 AUG 1977 |
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| Authors:
Arthur L. Smirl; NORTH TEXAS STATE UNIV DENTON DEPT OF PHYSICS
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| Progress is reported in using the high electric fields and the ultrashort pulses that can be derived from Nd:glass and CO2 lasers to investigate hot electron effects in semiconductors. This research is directed toward obtaining fundamental information concerning the saturable optical transmission properties and hot electron dynamics of semiconductors on a picosecond time scale and the stress and electric field biasing of the absorption properties of semiconductors under intense short ... |
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