This one year research program on compound semiconductor materials growth, devices and circuits has focused on: (a) organometallic vapor phase epitaxy (OMVPE) of GaInP/GaAs and AlInP/GaInP superlattices; (b) enhancement of heterostructure device speed performance via strain layer superlattices and mushroom gates in modulation doped FET's (MODFET's), and inserted tunnel barriers heterojunction bipolar devices (HBT); (c) fabrication and characterization of MODFET devices with gate lengths to 50 nm; (d) self- consistent ...
This program covers the growth and assessment of gallium arsenide and related compounds and alloys for use in microwave, millimeter wave, and optical devices. It also covers the processing of the material into devices, the testing of the devices, and the theoretical modeling of carrier transport in these devices. Both molecular beam epitaxy (MBE) and organometallic vapor phase epitaxy (OMVPE) are used for growth. The following specific tasks are pursued: ...
This program covers the growth and assessment of gallium arsenide and related compounds and alloys for use in microwave, millimeter wave, and optical devices. It also covers the processing of the material into devices, the testing of the devices, and the theoretical modeling of carrier transport in these devices. Both molecular beam epitaxy (MBE) and organometallic vapor phase epitaxy (OMVPE) are used for growth.
Reports by Author
