Doping distributions with spatially abrupt boundaries and high concentrations become increasingly important for compound semiconductor devices. A good understanding of the limitations of profiling techniques is required for such doping distributions. Two profiling techniques, capacitance-voltage (C-V) profiling and secondary ion mass spectrometry (SIMS), are used to study ultra-thin doping profiles and the limitations of the characterization techniques are analyzed.
Properties of Ga2O3 thin films deposited by electron-beam evaporation from a high- purity single-crystal Gd3Ga5O12 source are reported. As-deposited Ga2O3 films are amorphous, stoichiometric, and homogeneous. Excellent uniformity in thickness and refractive index was obtained over a 2 in. Wafer. The films maintain their integrity during annealing up to 800 and 1200 C on GaAs and Si substrates, respectively. Optical properties including refractive index (n = 1.84-1.88 at 980 nm ...
The light-emitting triode (LET) is a three-terminal p-n junction device that accelerates carriers in the lateral direction, i.e. parallel to the p-n junction plane, by means of an electric field between two anodes. The lateral field provides additional energy to carriers thereby allowing them to overcome barriers and increasing the carrier injection efficiency into the active region. Both the current between Anode 1 and the cathode, and the light-output power ...
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