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Ronald D. Schrimpf


Click on the titles below to find US government-authored or -collected reports written by Ronald D. Schrimpf

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Radiation Sources for Total-Dose Testing of Electronics 20 FEB 2002 18 pages
Authors:  Ronald D. Schrimpf; VANDERBILT UNIV NASHVILLE TN
The full text of this report is available for sale.Two Shepherd Model 89 cesium-137 gamma-ray irradiators were acquired and installed at Vanderbilt University. Safety inspections were performed and appropriate monitoring equipment was put in place. The sources provide capability for irradiating electronic devices at relatively - low dose rates, which is important for understanding important device-level degradation effects, including the Enhanced Low-Dose-Rate Sensitivity (ELDRS) of bipolar integrated circuits and long-term degradation and in-situ annealing of MOS integrated circuits. ...


Investigation of Radiation Effects in Microelectronics JUN 96 320 pages
Authors:  Kenneth F. Galloway; Ronald D. Schrimpf; Gregory H. Johnson; ARIZONA UNIV TUCSON DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
The full text of this report is available for sale.Electronic components implemented in space borne and military applications are often required to operate in a hostile radiation environment, and are therefore subject to the degradation and failure mechanisms associated with such environments. This report discusses radiation effects research in the areas of (1) single event burnout of power MOSFETs (2) single event gate rupture of power MOSFETs; (3) total dose degradation of power MOSFETs (including mobility degradation, cryogenic operation, ...


Research on Radiation Effects in Support of the Defense Nuclear Agency 01 JAN 93 129 pages
Authors:  Kenneth F. Galloway; Ronald D. Schrimpf; ARIZONA UNIV TUCSON DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
The full text of this report is available for sale.Because of their higher switching speeds, power MOSFETs are favored over power BJTs in spaceborne and military applications where size and weight are important. However, power MOSFETs are subject to degradation and failure mechanisms in radiation environments, including single event burnout, reduction of breakdown voltage, threshold shifts, and loss of current drive. This report discusses radiation-effects research in the areas of single event burnout of power MOSFETs and power BJTS, ...


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