| Sensors for In-Situ Process Monitoring and Process Control |
SEP 96 |
31 pages |
| Authors:
B. T. Khuri-Yakub; Krishna C. Saraswat; STANFORD UNIV CA EDWARD L GINZTON LAB OF PHYSICS
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 | This report presents the results of the development of an ultrasonic sensor for in-situ monitoring of silicon wafer temperature. The sensor is based on the measurement of the velocity of ultrasonic Lamb waves in the wafer, and relating this velocity to temperature. We present a method for efficient excitation and detection of Lamb waves in the wafer, a theoretical model for relating the variation of velocity as a function of ... |
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| Modeling and Measurement of Contact Resistances |
MAR 87 |
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| Authors:
William M. Loh; Stanley E. Swirhun; Tim A. Schreyer; Richard M. Swanson; Krishna C. Saraswat; STANFORD UNIV CA CENTER FOR INTEGRATED SYSTEMS
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 | This paper presents a generalized model of ohmic contacts and a unified approach for the accurate extraction of specific contact resistivity rho(c) for ohmic contacts from measured contact resistance using the cross bridge Kelvin resistor, the contact end resistor, and the transmission line tap resistor test structures. A general three-dimensional (3-D) model of the contacts has been developed from the first principles and has been reduced to 2- D, 1-D, ... |
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| In-Situ MOS Gate Engineering in a Novel Rapid Thermal/Plasma Multiprocessing Reactor |
23 JAN 87 |
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| Authors:
Mehrdad M. Moslehi; Man Wong; Krishna C. Saraswat; Steven C. Shatas; STANFORD UNIV CA CENTER FOR INTEGRATED SYSTEMS
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| Low temperatures and short times are essential requirements of future VLSI presenting and the use of plasma in conjunction with single-wafer lamp heating is a major step to realize this goal. In-situ multiprocessing reduces contamination and enhances yield. Reproducible growth of thin oxides in hot-wall furnaces is difficult due to long transient times and constant furnace temperatures. Since furnaces are not designed for single-wafer processing, no extensive in-situ real-time measurements ... |
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| Formation of MOS Gates by Rapid Thermal/Microwave Remote Plasma Multiprocessing |
87 |
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| Authors:
Mehrdad M. Moslehi; Krishna C. Saraswat; STANFORD UNIV CA CENTER FOR INTEGRATED SYSTEMS
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| A novel cold wall single wafer lamp heated Rapid Thermal/Microwave Remote Plasma Multiprocessing (RTMRPM) reactor has been developed for multilayer in-situ growth and deposition of dielectrics, silicon, and metals. This equipment is the result of an attempt to enhance semiconductor processing equipment versatility, to improve process reproducibility and uniformity, to increase growth and deposition rates at reduced processing temperatures, and to achieve in situ multiprocessing in conjunction with real time ... |
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| A Two-Dimensional Analytical Model of the Cross-Bridge Kelvin Resistor |
DEC 86 |
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| Authors:
Tim A. Schreyer; Krishna C. Saraswat; STANFORD UNIV CA
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| This paper presents an analysis model which correctly explains the two dimensional (2-D) current crowding effects observed in the cross bridge Kelvin resistor (CBKR). The model explains that the kelvin resistance measured by this device consists of two components, one due to specific resistivity and the other due to current flowing in the overlap region between the contact and the diffusion edges. The geometrical dependence of this second component is ... |
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| Rapid Thermal Oxidation and Nitridation of Silicon |
86 |
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| Authors:
Mehrdad M. Moslehi; Steven C. Shatas; Krishna C. Saraswat; STANFORD UNIV CA CENTER FOR INTEGRATED SYSTEMS
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| Rapid thermal processing of silicon in oxygen and ammonia reactive ambients was employed to grow thin layers of Silicon dixoide, silicon nitride and nitroxide for high-quality gate insulators of submicron CMOS VLSI. Rapid thermal oxidation of (100) silicon in dry oxygen exhibited a nonlinear growth in the short-time regime. The oxide-growth rate rises as the oxidation time is reduced, and the highest rate occurs for the shortest rapid oxidation time. ... |
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| Interfacial and Breakdown Characteristics of MOS Devices with Rapidly Grown Ultrathin SiO2 Gate Insulators |
86 |
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| Authors:
Mehrdad M. Moslehi; Steven C. Shatas; Krishna C. Saraswat; James D. Meindl; STANFORD UNIV CA CENTER FOR INTEGRATED SYSTEMS
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| Metal-oxide-semiconductor devices fabricated with tungsten/n+ polysilicon composite gates and subhundred-angstrom SiO2 gate insulators grown by rapid thermal oxidation were characterized by various electrical measurements. The as-fabricated devices with unannealed rapidly grown oxides exhibited breakdown characteristics superior to furnace-grown oxides as evidenced by their excellent breakdown uniformity, an average breakdown field of 15 MV/cm, and an average breakdown charge density of over 50 C/ sq cm 2 at a stress current ... |
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| Rapid Thermal Nitridation of SiO2 for Nitroxide Thin Dielectrics |
15 NOV 85 |
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| Authors:
Mehrdad M. Moslehi; Krishna C. Saraswat; Steven C. Shatas; STANFORD UNIV CA CENTER FOR INTEGRATED SYSTEMS
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| Nitroxide thin films have been grown by rapid thermal nitridation of oxidized silicon in ammonia. The kinetics of formation of the surface and interface nitrogen-rich layers has been investigated and correlated to the electrical behavior of these films. It could be concluded that rapid thermal nitridation of = 100 A SiO2 results in negative shift of flatband voltage, slightly increases the surface state density, increases the low-field conductivity, reduces the ... |
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| Refractory Metals and Silicides for Very Large Scale Integration Applications |
NOV 85 |
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| Authors:
Krishna C. Saraswat; STANFORD UNIV CA CENTER FOR INTEGRATED SYSTEMS
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| Continuous advancements in technology have resulted in integrated circuits with smaller device dimensions, and larger area and complexity. The overall circuit performance has depended primarily on the device properties. However, the parasitic resistance and capacitance associated with interconnections and contacts, as for an MOS transistor, are now beginning to influence the circuit performance and will be the primary factors in the evolution of submicron VLSI technology. Examples of contact resistance ... |
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| Method of Chemically Vapor Depositing a Silicide Film. |
17 DEC 1981 |
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| Authors:
Krishna C. Saraswat; DEPARTMENT OF THE ARMY WASHINGTON DC
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| A film of a silicide of a refractory metal is chemically vapor deposited onto a substrate by placing a susceptor containing the substrate in a chemical vapor deposition reactor, flowing a compound of a refractory metal and a silicon bearing chemical diluted in nitrogen over the susceptor containing the substrate and heating the susceptor and substrate. The film is compatible with common integrated circuit techniques. (Author) |
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