A. V. Sampath - Storming Media

High Efficiency Light Emission Through Carrier Localization in AlGaN alloys and Active Regions: Toward Viable Ultraviolet Light Sources for the Objective Force Warrior

DEC 2004

8 pages

Authors: M. Wraback; H. Shen; C. J. Collins; A. V. Sampath; G. A. Garrett; W. L. Sarney; A. Y. Nikiforov; G. S. Cargill; V. Dierolf; ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE

The full text of this report is available for sale.

AlGaN samples growth by plasma-assisted molecular beam epitaxy on sapphire (0001) substrates, with 20-50% Al content and without the use of indium, show intense room temperature photoluminescence that is significantly red-shifted. 200-400 meV, from band edge. This intense emission is characterized by a long room temperature lifetime (^300-400 ps) comparable to that seen in low defect density (^10(exp 8)/sq cm) GaN. Room temperature monochromatic scanning cathodoluminescence images at the red-shifted ...