Staggered lineup heterojunctions are expected to exhibit tunneling assisted optical transitions across the interfacial energy gap E sub I. In the staggered lineup, E sub I is smaller than either of the energy gaps of the constituent semiconductors. In this work, we examined two staggered lineup heterojunctions, ZnSnP2/GaAs and In1-xGaP/GaAs. Below bandgap emission and absorption were observed in these structures, allowing the experimental determination of E sub I. Good agreement ...