Electroluminescence (EL) spectra are studied in the type-II ZnSe/BeTe light emitting diode (LED) based on a single heterojunctions. The light emitted from the surface exhibits a strong in-plane linear polarization along 110 crystal axis. The polarization is stable in respect to an increase of the applied voltage and temperature tip to 300 K. The experimental data are discussed in the framework of a tight-binding model taking into account a type-II ...
IN CONCLUSION. CdSe/BeTe type-il nanostructures have been grown by MBE on GaAs substrates and studied by RHEED. XRD and PL for the first time. These structures demonstrate extremely high sensitivity to the interface bond type (BeSe or CdTe). with the CdTe interfaces providing much higher structural quality and PL intensity. Formation of the first CdTe interface, controlled by RHEED at the 0.1 ML level, causes radical variation of the structure ...
Recently, efficient electrical injection of spin polarized electrons into GaAs bas been accomplished by using a semimagnetic II-VI single layer, namely BeMnZnSe, as a spin aligner. In such spin aligner materials. the orientation of the electron spins can only be controlled by varying the magnetic field. Here, we introduce an approach aiming at manipulating spins by an external voltage. For that we developed BeTe/ZnMnSe/BeTe semimagnetic resonant tunneling diodes as a ...
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