| Analog Processing of Optical Wavefront Using Integrated Guided-Wave Optics |
30 MAR 94 |
55 pages |
| Authors:
Robert H. Rediker; MASSACHUSETTS INST OF TECH CAMBRIDGE RESEARCH LAB OF ELECTRONICS
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 | Integrated Guided-Wave Optics has many advantages for the analog processing of optical wavefronts. These include small-size, high-speed, simplicity, reliability and reproducibility. The fabrication technique is similiar to that of integrated circuits. The thrust of this program was to develop an integrated guide-wave optic system in GaAs and GaAlAs for use at GaAs laser wavelength, to remove aberrations from a laser beam and to steer the beam. The system would in ... |
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| Communications: Fiber-Coupled External-Cavity Semiconductor High-Power Laser |
31 AUG 92 |
91 pages |
| Authors:
Robert H. Rediker; MASSACHUSETTS INST OF TECH CAMBRIDGE RESEARCH LAB OF ELECTRONICS
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| Described in this report is the successful operation of the 'Fiber- Coupled External-Cavity Semiconductor high-Power Laser.' In addition, this report includes experiment, theory and discussion on the physics of the operation of an external cavity in which a multiplicity of gain elements (semiconductor diode lasers with one facet antireflection (AR) coated) are coherently coupled. Variations of such external cavity schemes are being attempted under government sponsorship by commercial organizations. The ... |
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| Analog Processing of Optical Wavefront Using Integrated Guided-Wave Optics |
09 OCT 91 |
22 pages |
| Authors:
Robert H. Rediker; MASSACHUSETTS INST OF TECH CAMBRIDGE RESEARCH LAB OF ELECTRONICS
|
| Integrated Guided-Wave Optics has many advantages for the analog processing of optical wavefronts. These include small-size, high-speed, simplicity, reliability and reproducibility. The fabrication technique is similar to that of integrated circuits. The thrust of this program is to develop an integrated guided-wave optic system, in GaAs and GaAlAs for use at GaAs laser wavelength, to remove aberrations from a laser beam and to steer the beam. The system would in ... |
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| Analog Processing of Optical Wavefronts Using Integrated Guided-Wave Optics |
30 NOV 90 |
40 pages |
| Authors:
Robert H. Rediker; MASSACHUSETTS INST OF TECH CAMBRIDGE RESEARCH LAB OF ELECTRONICS
|
| Integrated Guided-Wave Optics has many advantages for the analog processing of optical wavefronts. These include small-size, high-speed, simplicity, reliability and reproducibility. The fabrication technique is similar to that of integrated circuits. The thrust of this program was to develop an integrated guided-wave optic system, in GaAs and GaAlAs for use at GaAs laser wavelength, to remove abberations from a laser beam and to steer the beam. The system would in ... |
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| Fiber-Coupled External-Cavity Semiconductor High Power Laser |
JAN 87 |
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| Authors:
Robert H. Rediker; Kristin K. Anderson; So K. Liew; Christopher J. Corcoran; MASSACHUSETTS INST OF TECH CAMBRIDGE RESEARCH LAB OF ELECTRONICS
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 | Last year's annual report described the high spectral purity of the output from an ensemble of five discrete diode lasers when operated cw. The linewidth of the cw output of this external-cavity-controlled ensemble of diode lasers was shown to be less than 7.5 MHz (approx 2 x 10 to the -8th power of the center frequency). Also reported last year was high-spectral-purity pulsed output from this external cavity controlled laser. ... |
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| Communications: Fiber-Coupled External Cavity Semiconductor Laser |
01 JUL 1981 |
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| Authors:
Robert H. Rediker; MASSACHUSETTS INST OF TECH CAMBRIDGE RESEARCH LAB OF ELECTRONICS
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| The series combination of a semiconductor-diode gain element (a diode laser whose end facets have been antireflection coated) and an optical fiber has been placed inside an external cavity and the external cavity has lased in a single spectral line whose width was less than the 1.7 x 10 to the -5-nm resolution of the scanning Fabry-Perot interferometer used. When a grating in the Littrow configuration is used as one ... |
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| Optics Research. |
31 DEC 1977 |
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| Authors:
Robert H. Rediker; MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
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| This report contains copies of journal articles, and papers appearing in conference proceedings describing optics research at Lincoln Laboratory during the period 1 July 1976 through 31 December 1977. Also included are preprints of articles accepted by journals and conference proceedings during this period as well as a list of meeting speeches given during thir period. Additional information on the Optics Program may be found in the ARPA/Sto Program and ... |
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| Optics Research, 1976:1. |
30 JUN 1976 |
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| Authors:
Robert H. Rediker; MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
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| Contents: Laser Technology and Propagation--Laser Effects - Effect of Pulse Shape and Pulse Length on Enhanced Thermal Coupling to Metals, Long-Pulse HF Laser Breakdown Experiment; Stable CO2 Laser Development and Evaluation - Calibration of C(14)O2(16) Laser Lines; Pollution Studies. |
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| Optics Research: 1975:2. |
31 DEC 1975 |
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| Authors:
Robert H. Rediker; MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
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| ;Contents: Laser technology and propagation - A. Propagation--(Laboratory experiment on phase correction for thermal blooming, Phase compensation for multiple-pulse thermal blooming, Phase compensation for turbulence, Fog hole boring and propagation study), B. Pollution studies - Atmospheric CO monitoring over long paths in the 1975 regional air pollution study (RAPS) in St. Louis--(Introduction, Site 108 - Granite City, Illinois, Site 105 - Downtown St. Louis, Missouri). |
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| Optics Research: 1975:1. |
07 NOV 1975 |
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| Authors:
Robert H. Rediker; MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
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| This report covers work of the Optics Division at Lincoln Laboratory. The topics covered are laser technology and propagation and pollution studies. Additional information on the optics program may be found in the ARPA/STO Program Semiannual Technical Summary Reports to the Advanced REsearch Projects Agency. |
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| Optics Research: 1974:2. |
31 DEC 1974 |
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| Authors:
Robert H. Rediker; MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
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| Contents: Laser technology and propagation--Thermal blooming of successive laser pulses, Multiple-pulse blooming of a focused beam in a uniform wind, Laboratory experiment on thermal blooming, Impulsive loading of targets by HF laser pulses, Double-pulse pressure and impulse measurements, Ballistic pendulum for high-power laser measurements, Laser heating of metallic surfaces, Plasma enhancement of thermal coupling to targets, Stable CO2 laser measurements; Pollution studies--Participation in the St. Louis regional air pollution study ... |
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| Optics Research: 1974:1. |
30 JUN 1974 |
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| Authors:
Robert H. Rediker; MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
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| Contents: Laser technology and propagation--Pulse propagation, effects, and devices; Optical measurements and instrumentation--Interferometric image evaluation, and long-path monitoring of atmospheric carbon monoxide by a tunable diode laser system. |
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| Optics Research: 1973:2. |
31 DEC 1973 |
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| Authors:
Robert H. Rediker; MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
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| The report covers work of the Optics Division at Lincoln Laboratory for the period 1 July through 31 December 1973. The topics covered are laser technology and propagation and optical measurements and instrumentation. (Modified author abstract) |
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| Optics Research, 1973:1. |
31 OCT 1973 |
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| Authors:
Robert H. Rediker; MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
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| The report covers work of the Optics Division at Lincoln Laboratory for the period 1 January through 30 June 1973. The topics covered are laser technology and propagation and optical measurements and instrumentation. (Modified author abstract) |
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| Physics of Semiconductor Luminescence and High-Temperature Semiconductors. |
02 JUL 1973 |
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| Authors:
Robert H. Rediker; Clifton G. Fonstad; MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF ELECTRICAL ENGINEERING
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| A new luminescence modulation effect was observed in Si and Ge and a new negative resistance phenomenon discovered in Ge. The intrinsic energy band levels in (Al,Ga)As were studied as a function of alloy composition, and the modulation of (Al,Ga)As luminescence by surface fields investigated. Higher quality crystals of the wide band-gap semiconductor stannic oxide than previously available were grown and extensive studies were undertaken of SnO2's electrical and optical ... |
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| Optics Research, 1972:2. |
31 DEC 1972 |
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| Authors:
Robert H. Rediker; MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
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| The report covers work of the Optics Division at Lincoln Laboratory for the period 1 July though 31 December 1972. The topics covered are laser technology and propagation, and optical measurements and instrumentation. (Modified author abstract) |
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| Optics Research, 1972:1. |
19 DEC 1972 |
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| Authors:
Robert H. Rediker; MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
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| 20050 20060 17080 17050MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LABOptics Research, 1972:1.Semiannual rept. 1 Jan-30 Jun 72,Rediker,Robert H. ;F19628-70-C-0230, ARPA Order-600ESDTR-72-195(*lasers, scientific research), (*optical instruments, scientific research), (*optical radar, scientific research), infrared lasers, coherent radiation, light transmission, atmosphere models, plasma generators, gas lasers, frequency multipliers, zinc sulfides, air pollution, spectrum analyzers, exhaust gases, transfer functions, range findinglaser beams, laser produced plasmas, laser spectroscopy, air pollution detection, carbon dioxide lasers, data ... |
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| Optics Research |
30 JUN 72 |
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| Authors:
Robert H. Rediker; MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
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| This report covers work of the Optics Division at Lincoln Laboratory for the period 1 January through 30 June 1972. The topics covered are laser technology and propagation, optical measurements and instrumentation, and laser radar. Additional information on the optics program may be found in the semi- annual technical summary reports to the Advanced Research Projects Agency. |
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| HIGH ELECTRIC FIELD TRANSPORT IN DEGENERATE n-TYPE PbTe AND PbSe. |
08 JUL 1970 |
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| Authors:
Hugues St-Onge; James N. Walpole; Robert H. Rediker; MASSACHUSETTS INST OF TECH CAMBRIDGE CENTER FOR MATERIALS SCIENCE AND ENGINEERING
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| Nanosecond pulse techniques are used to determine velocity-field characteristics of bulk samples of n-type PbTe and n-type PbSe at 77K and 4.2K for carrier concentrations ranging from 1 x 10 to the 17the power/cc to 5 x 10 to the 17the power/cc. At fields of a few hundred volts/cm, a sublinear variation of the velocity with electric field is observed. At higher fields, of about 2500 V/cm and 1000 V/cm ... |
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| THE GAAS-INSB GRADED-GAP HETEROJUNCTION. |
15 AUG 1967 |
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| Authors:
Everett D. Hinkley; Robert H. Rediker; MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
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| The interface-alloy technique has been used to produce heterojunctions between GaAs and InSb. X-ray and Kossel line patterns show that, despite the relatively large 14% lattice mismatch between the semiconductors, these heterojunctions are single-crystal. Photocurrent and current-voltage measurements are explained by a model for the heterojunction band structure in which the salient feature is a region of the order of 60 A long which has a linearly-graded energy gap joining ... |
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