The metallurgical process of Wide Band Gap Mercury Cadmium Telluride (WBHCT) compound fabrication is briefly reviewed. Special emphasis is given to the Traveling Heater Method (THM) for HgCdTe growth. Physical and electronic properties are analyzed with particular attention to properties that apply to optoelectronic devices. Some special features, such as low intrinsic concentration, low band gap temperature coefficient and matching of band gap to spin orbit coupling appear to be ...
The second phase of this contract was dedicated to the optimization of the technical fabrication parameters of HgCdTe avalanche photodiodes in the 1.3 micron to 1.55 micron wavelength region. In addition, the electroluminescent properties and the technical feasibility of HgCdTe emitters were investigated. The fabrication technology implemented for the deliverable avalanche photodiodes under this contract is planar.
During this initial contract phase we concentrated on the study of physical properties of wide energy-band gap Hg(1-x)Cd(x)Te on the one hand and on growth techniques for very high-grade material, on the other hand.
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