The conventional polysilicon gate in a MOSFET has been replaced by an aluminum metal gate which offers higher RF performance through the reduction of gate resistance. Pulsed excimer laser annealing of the source and drain was then used to avoid conventional furnace annealing that would melt the aluminum metal gate. CMOS field-effect transistors utilizing metal gates were fabricated in Silicon-on-Insulator (SOI) technology down to 0.25 micron gate lengths. The DC ...
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