Chromium(III) oxide films of 2000A thickness were deposited on n-type silicon wafers by a novel spray pyrolysis method. Different spray solutions, all containing a chromium acetylacetonate complex, gave different rates of film deposition. IR spectroscopy of these films confirmed them to be alpha-Cr203. The deposited films of alpha-Cr203 were found to be homogeneous and uniform with breakdown potentials in excess of 20 V. The characteristics of films prepared from different ...