| Single Electron Phenomena in Semiconductor Structures |
25 NOV 2001 |
7 pages |
| Authors:
M. Pepper; CAMBRIDGE UNIV (UNITED KINGDOM) CAVENDISH LAB
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 | This report contains a summary of the work carried out on the quantised dc current produced by the transmission of Surface Acoustic Waves through a narrow channel in a GaAs-AIGaAs heterostructure. It is shown that dynamic modulation of the potential at the channel entrance produces a significant effect on the quantisation. The technology of deviced fabrication was investigated, etched in-plane gates utilising the 2D electron gas produced a harder confinement ... |
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| High Frequency Investigations of Lateral Superlattice Structures |
26 JAN 1998 |
11 pages |
| Authors:
M. Pepper; CAMBRIDGE UNIV (UNITED KINGDOM) CAVENDISH LAB
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| A description is given of work on the controlled movement of single electrons induced by a Surface Acoustic Wave in GaAs heterostructures and the formation of mini-gaps induced by a potential from patterned gates. |
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| Quantum Phenomena in Semiconductor Structures |
13 DEC 88 |
15 pages |
| Authors:
M. Pepper; CAMBRIDGE UNIV (ENGLAND) CAVENDISH LAB
|
| The research investigated the electronic properties of small semiconductor devices where transport is dominated or affected by quantum phenomena. Topics investigated included small silicon MOS transistors, here it is shown that large, intrinsic, stresses affect transport in the two dimensional inversion layer. As the stress is at the edge of the device, it is not significant for larger structures. The electron-phon interaction in epitaxial layers of GaAs has been investigated ... |
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| MBE of (Hg,Cd)Te |
OCT 88 |
54 pages |
| Authors:
T. D. Golding; M. Pepper; CAMBRIDGE UNIV (ENGLAND) CAVENDISH LAB
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| The work sponsored under this contract has centered on the molecular beam epitaxial growth of InSb/CdTe heterojunctions and multilayer structures, and on (Zn,Cd)Te/CdTe strained layer superlattices. We have been the first to demonstrate the molecular beam epitaxial growth of InSb/CdTe superlattices at temperatures necessary for the growth of electrical active InSb. An indication of the progress in this III-V/II-VI mixed system is the first observation of the quantum hall effect ... |
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| Quantum Phenomena in Semiconductor Structures |
APR 88 |
54 pages |
| Authors:
M. Pepper; CAMBRIDGE UNIV (UNITED KINGDOM) CAVENDISH LAB
|
| We have commenced experiments aimed at producing a metal pattern on the AlGaAs of an AlGaAs-GaAs modulation doped heterojunction. This will enable us to investigate details of the transport when the effective sample length is considerably less than the scattering mean free path. Many of the proposed experiments of this grant concern one dimensional effects and we have concentrated (during this last period) on the energy levels in narrow modulation ... |
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| Novel Transport and Recombination Processes in Semiconductors |
MAR 85 |
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| Authors:
M. Pepper; CAMBRIDGE UNIV (ENGLAND) CAVENDISH LAB
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 | This report describes work on spin dependent recombination processes, electron injection from point contacts into semiconductors and the Quantisation of Hall resistance in strong magnetic fields. The work on spin dependent processes has identified spin dependent recombination and generation processes as well as a non-resonant magnetic field effect centered at zero magnetic field. This effect clearly has the same cause as the resonant generation and recombination processes. Resonance effects were ... |
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| Novel Transport and Recombination Processes in Semiconductors |
MAR 1984 |
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| Authors:
M. Pepper; CAMBRIDGE UNIV (ENGLAND) CAVENDISH LAB
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| This report describes our work on spin dependent recombination to date and contains copies of preprints and reprints of our work on two dimensional transport. Our work on spin effects has succeeded in identifying both spin dependent generation and recombination. The obtained structure is described and it is shown that damage produced by avalanche injection of holes gives rise to an SDR signal. The major feature of our work on ... |
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| Novel Transport and Recombination Processes in Semiconductors |
MAR 1983 |
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| Authors:
M. Pepper; CAMBRIDGE UNIV (ENGLAND) CAVENDISH LAB
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| This report contains descriptions of our work on two dimensional transport in Si and InP devices and spin dependent recombination in Si gate controlled p-n junctions. The two dimensional work covers our investigations of the quantum Hall effect where we find that the effect is basically d.c. and can be measured by the application of a finite frequency. The cause of this effect is discussed in terms of a delocalisation ... |
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| Carrier Localisation in Inversion Layers and Impurity Bands |
NOV 1981 |
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| Authors:
M. Pepper; CAMBRIDGE UNIV (ENGLAND) CAVENDISH LAB
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| This report is principally concerned with our work on the physics of transport in two dimensional systems. We show that the logarithmic corrections to the conductance of Si inversion layers arise from both interaction and localization effects. Application of a magnetic field suppresses localization and enhances the role of interactions. At certain values of magnetic field both effects can be present, but with a different stability against increasing temperature. Consequently, ... |
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| Carrier Localisation in Inversion Layers and Impurity Bands. |
NOV 1980 |
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| Authors:
M. Pepper; CAMBRIDGE UNIV (ENGLAND) CAVENDISH LAB
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| This report contains results on the ballistic injection of electrons between Al and n+ Si and Al and the Si inversion layer. This was the first experiment on ballistic injection between a semiconductor and a metal, and yielded results of considerably greater clarity than those found from the all metal work. Basically the phonons responsible for intervalley scattering can be clearly observed and the technique offers a means of identifying ... |
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| Carrier Localisation in Inversion Layers and Impurity Bands. |
NOV 1979 |
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| Authors:
M. Pepper; CAMBRIDGE UNIV (ENGLAND) CAVENDISH LAB
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| Results are presented covering three areas of investigation. The first is the observation and interpretation of spin dependent recombination in silicon gate controlled p-n junctions. The resonance of surface states near mid-gap was detected on MNOS and electron irradiated, (100), devices. The second investigation commenced with the discovery of conductance oscillations in GaAs FET structures below about 10 K. The objective of the experiment was to investigate localisation in conventional ... |
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