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Reports by Author

John E Penn


Click on the titles below to find US government-authored or -collected reports written by John E Penn

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Monolithic Microwave Integrated Circuits (MMIC) Broadband Power Amplifiers Dec 2012 34 pages
Authors:  John E Penn; ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE
The full text of this report is available for sale.A broadband power amplifier design approach was used to design several monolithic microwave integrated circuits (MMICs) using a 0.13- m gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) process from TriQuint Semiconductor. The design and fabrication of these circuits were performed as part of the fall 2011 Johns Hopkins University (JHU) MMIC Design Course, taught by the author. The design approach is taught by Dale Dawson in the JHU ...


Distributed Amplifier Monolithic Microwave Integrated Circuit (MMIC) Design Oct 2012 28 pages
Authors:  John E Penn; ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE
The full text of this report is available for sale.A very broadband distributed amplifier was designed using a 0.13-micrometer gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) process from TriQuint Semiconductor. The design and fabrication of this circuit was performed as part of the fall 2011 Johns Hopkins University Monolithic Microwave Integrated Circuit (MMIC) Design Course, taught by the author. The design approach is applicable to very broadband, low noise MMICs that could be used for a variety ...


System Tests of Optimized (2nd Pass) Gallium Arsenide (GaAs) Integrated Circuit Radio Frequency (RF) Booster Designs for 425 MHz and Dual Band (425 and 900 MHz) Sep 2011 58 pages
Authors:  John E Penn; ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE
The full text of this report is available for sale.High-performance microwave and radio frequency integrated circuits are of interest to the Army. The radio frequency (RF) integrated circuit (RFIC) booster chip is intended to increase range between RF nodes for low-power wireless applications. The booster concept uses the excellent RF performance advantages of gallium arsenide (GaAs) and is easily inserted into systems based on commercial silicon (Si) RFIC transceivers to enhance their capabilities and improve size, weight, and power ...


Testing of Active Optimized (2nd Pass) Gallium Arsenide (GaAs) Integrated Circuit Radio Frequency (RF) Booster Designs for 425 MHz and Dual Band (425 and 900 MHz) in QFN Packages Feb 2011 64 pages
Authors:  John E Penn; ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE
The full text of this report is available for sale.High-performance microwave and radio frequency integrated circuits are of interest to the Army. Several monolithic microwave integrated circuits (MMICs) were designed to enhance the performance of commercial-off-the-shelf (COTS) RF integrated circuits (RFICs) used in many wireless systems. Ten designs in a multi-project prototype GaAs fabrication included active RF front end designs as well as integrated passive matching circuits to reduce SWAP at the system level. The five active MMIC designs ...


Results of Bare Die Testing of Optimized (2nd Pass) Gallium Arsenide (GaAs) Integrated Circuit Radio Frequency (RF) Booster Designs for 425 MHz and Dual Band (425 and 900 MHz) Feb 2011 62 pages
Authors:  John E Penn; ARMY RESEARCH LAB ADELPHI MD
The full text of this report is available for sale.High-performance microwave and radio frequency integrated circuits (RFICs) are of interest to the Army. Several monolithic microwave integrated circuits (MMICs) were designed to enhance the performance of commercial-off-the-shelf (COTS) RFICs used in many wireless systems. This report documents the bare die probe testing of ten MMIC designs optimized for 400?950 MHz operation. These designs include active RF front end designs, as well as integrated passive matching circuits to reduce SWAP ...


Total Results: 5 Results per page: