R. L. Pease - Storming Media

01 JAN 1982

Authors: R. L. Pease; D. R. Alexander; MISSION RESEARCH CORP ALBUQUERQUE NM

The full text of this report is not available and therefore is not for sale. This information is provided for reference purposes only.

PNPN latchup was studied both analytically and experimentally in several bipolar LSI technologies including integrated injection logic (I to the second power L), integrated Schottky logic (ISL), Schottky Transistor logic (STL) and emitter coupled logic (ECL). The latchup analysis procedure was expanded and applied to LSI microcircuits representing each of the technologies. This procedure consists of a) the identification of parasitic PNPN paths, b) the electrical characterization of the paths, ...

Single Event Upset Phenomena from High Energy Neutrons

01 DEC 1981

Authors: R. L. Pease; J. P. Raymond; MISSION RESEARCH CORP ALBUQUERQUE NM

The susceptibility of circumvented and uncircumvented endoatmospheric and exoatmospheric systems to neutron induced SEU(Single Event Upsets) was considered in very general terms of nuclear weapon threat and system configuration. For both exiatmospheric and endoatmospheric uncircumvented systems it appears that transient upset effects will be dominated by effects of the prompt ionization pulse. In the worst case neutron-induced SEUs are comparable to the upset levels of the prompt ionization pulse. For ...

Analytical Investigation of Neutron Hardening of Integrated Injection Logic

11 JUL 1980

Authors: R. L. Pease; MISSION RESEARCH CORP ALBUQUERQUE NM

An analytical technique is presented for investigating the neutron induced degradation of integrated injection logic (I2L) inverter cells as a function of basic processing variables. The technique combines a one-dimensional semiconductor device code, the PN code, with the circuit analysis code SPICE. Predictions of neutron induced degradation as a function of npn transistor base doping, epitaxial thickness and resistivity and pnp transistor base width are presented for a second generation ...

Simultaneous Neutron Spectrum and Transistor-Damage Measurements in Diverse Neutron Fields: Validity of D sub Si (E sub n).

16 MAR 1979

Authors: v. v. verbinski; C. Cassapakis; R. L. Pease; H. L. Scott; SCIENCE APPLICATIONS INC LA JOLLA CALIF

This report contains a summary of intercalibration measurements carried out on four different reactors under various irradiation conditions. These reactors were the Northrop TRIGA, SANDIA SPR II and ACPR, and the Aberdeen APRF reactor. The intercalibration was carried out by (a) measuring neutron spectra for a variety of basic and modified ('filtered') reactor neutron fields with a standard threshold-foil-activation neutron spectrometry method, (b) folding in each spectrum phi(E) with the ...

Electrical Overstress Test Program and Integrated Circuit Failure Mode Evaluation.

26 APR 1978

Authors: R. L. Pease; D. R. Alexander; C. R. Jenkins; BDM CORP ALBUQUERQUE N MEX

This final report describes the SOS diode test structures which will be used for empirical investigation of electrical overstress failure. The test structures, in which important physical parameters are varied, are described in detail and a test plan is presented for the overstress testing that will generate failure data for a sensitivity analysis of pulse power failure level as a function of junction area, epitaxial thickness, junction radius of curvature, ...