The objectives of the program are to: (1) investigate high-energy ion implantation of donors into GaAs for multigigabit-rate GaAs integrated-circuit (IC) development and (2) to study the use of high-power lasers and other techniques for removing lattice damage and activating implanted species. GaAs ICs require the selective definition of n-layers in semi-insulating (SI) GaAs for the fabrication of active devices such as FETs, TELDs, and Schottky-barrier diodes. In order to ...
The objective of the program is to develop techniques for the vapor phase growth of high resistivity epitaxial layers of GaAs on semi-insulating (SI) GaAs substrates. A capability to grow high resistivity buffer layers with minimum structural defects prior to the growth of active device layers would eliminate device performance problems caused by poor and inconsistent substrate quality. During the program a reactor and its associated gas handling system was ...
The objective of this program is to develop techniques for the vapor-phase growth of high-resistivity epitaxial layers of gallium arsenide on semi-insulating gallium arsenide substrates. A capability to grow such layers of high-quality material with minimum structural defects and good surface quality for use as buffer layers prior to the growth of active layers for such devices as FETs and TELDS will eliminate the device performance problems caused by poor ...
An integral heat sink technology for the fabrication of high efficiency transferred electron oscillators was successfully developed. Using this technology, typical device efficiencies were increased from between 3 and 5% to between 6 and 9%. The best efficiency obtained was 14%, the highest efficiency reported to date for cw TEOs. The highest power output obtained from a single mesa device was 400 mW. The best power output-efficiency combination was 305 ...
A Penning discharge was used to generate in hydrogen a plasma suitable for use in a microwave electron beam plasma amplifier. Plasma densities on the order of 10 to the 11th power electrons per cubic centimeter were obtained. A two-fluid theoretical model of the plasma was developed in order to explain the operation of the discharge. It is supported by diagnostic measurements of two kinds, microwave-cavity measurements and probe measurements. ...
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