Selective growth of GaN and Al(0.2)Ga(0.8)N has been conducted on stripe and circular patterned GaN/AlN/6H-SiC(0001) multilayer substrates. Prismatic morphology with (1-101) side facets was observed on 3 micrometers wide stripes for both materials. Hexagonal pyramid arrays of undoped GaN and Si-doped GaN were achieved on 5 micrometers circular patterns. Field emission measurements of the resulting Si-doped GaN pyramids exhibited a turn-on field of 25V/micrometers for an emission current of 10.8 ...
Reports by Author
