A weak localization effect has been studied in macroscopically inhomogeneous 2D system. It is shown that although the real phase breaking length tends to infinity when the temperature tends to zero such a system can reveal a saturated behavior of the temperature dependence of that parameter which is obtained from the standard analysis of the negative magnetoresistance and usually identified by experimenters with the phase braking length.
The temperature and gate voltage dependencies of the phase breaking time is studied experimentally in the structures with quantum well based on GaAs/InGaAs. There is shown that arising of the states at the Fermi energy in the doped layers (Sn & layer in our case) leads to significant decreasing of the phase breaking time and to weakness its temperature dependence.
The weak localization correction to the conductivity in coupled double layer structures was studied both experimentally and theoretically. The statistics of the closed paths was determined from analysis of the magnetic field and temperature dependencies of the negative magnetoresistance for magnetic field perpendicular and parallel to the structure plane. The comparison of the results with the results of computer simulation of carrier motion at scattering shows that inter-layer tunneling plays ...
The results of computer simulation of particle motion over the plane with randomly distributed scatters are presented. They are used to analyse the influence of scattering anisotropy on the negative magnetoresistance due to weak localisation. It is shown that the magnetic field dependence of magnetoresistance in this case can be described by the well known expression. obtained in the diffusion limit for isotropic scattering. but with the prefactor less than ...
The magnetoresistance in weak localization regime was thoroughly investigated both for the classical and quantum two-dimensional (2D) electron systems.
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