The experimental investigation of fluctuations is a source of information on fast and ultrafast processes responsible for HFET performance and damage. A novel fluctuation-based approach, based on hot-electron velocity fluctuations measured at a microwave frequency, is used for prediction of nitride HFET operation and failure. The following statements summarize the main results: (1) The resonance-type dependence of hot-phonon lifetime on 2DEG density is resolved from the electron velocity fluctuations; (2) ...
A novel fluctuation-based approach is applied to consider the unsolved problems in the realm of nitride heterostructure field effect transistors (HFETs). Fluctuations originate at a microscopic level and provide information on the processes responsible for device operation and degradation. The novel fluctuation-based approach is impelled by recent demonstration of strong correlation of microwave hot-electron fluctuations with frequency performance and degradation of nitride HFETs. The correlation has its genesis in the ...
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