ZnO is a wide bandgap semiconductor with very promising expectation for UV optoelectronics. The existence of large crystals should allow homoepitaxial growth of ZnO films for advanced optoelectronic devices. However, the ZnO substrates are not yet mature. Both defect induced by growth and by polishing together with the high reactivity of the surface are problems to their industrial application. Cathodoluminescence (CL) was used to probe the quality of substrates from ...
This report results from a contract tasking Universidad de Valladolid as follows: Objective 1: To study the influence of the growth parameters on the defects and inhomogeneities of ZnO crystals grown by Hydrothermal technique. This technique has the advantage of large bulk crystal production, but presents the possibility of unintentional impurity introduction. Furthermore, the incorporation of impurities is not uniform. This objective will be achieved by the way of: Analysis ...
Reports by Author
