Raman scattering measurements have been performed on semiconductor- insulator nanocomposites in which the semiconducting phase occupies a significant (30%) volume fraction. The composites have been synthesized by high pressure injection of the conducting melt into the nanochannels of commercially available insulating matrices. The optical phonon spectra of GaSb- and Te-SiO, composites exhibit shifts, broadenings, and asymmetries when compared to those of the semiconducting bulk. These are interpreted in terms of ...
We report on the Raman scattering spectra and fundamental absorption edge of dense semiconductor-insulator nanocomposites. These were synthesized by injection of the semiconducting melt into the channels of dielectric matrices. The Raman spectra exhibit shifts, broadenings, and asymmetries consistent with phonon confinement in nanometre-size semiconductor crystallites. Nanoscale networks of small effective mass semiconductors show evidence for electron confinement as manifested by a blue shift of the fundamental absorption edge.
Reports by Author
