Oxygen agglomeration processes leading to the formation of thermal donors in Czochralski grown silicon subjected to heat treatment at T = 450 deg C at atmospheric pressure and a high hydrostatic pressure of P = 1 GPa are studied. The samples investigated were doped with isoelectronic impurities of carbon and germanium. Both impurities are known to suppress the formation processes of thermal donors under normal conditions of heat treatment. It ...
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