| An Overview of Structure and Property Evolution During Thermal and Mechanical Processing of an Al-Mg Alloy (AA5083) |
91 |
|
| Authors:
N. Raghunathan; H. B. McShane; C. P. Lee; T. Sheppard; IMPERIAL COLL OF SCIENCE TECHNOLOGY AND MEDICINE LONDON (UNITED KINGDOM)
|
 | An overview of structure and property evolution in AA 5083, an Al-Mg alloy, during thermal and mechanical processing has been presented. Coring and microsegregation in the as cast material required prolonged homogenization to remove the segregation. Nonuniform precipitation near the dendrite boundaries produced a banded structure in the hot rolled material. The full Beta fibre texture is fully developed in the hot rolled products with the pole intensity near the ... |
|
| Structure, Anisotropy, and Properties of Hot Rolled AA 5083 Alloy |
90 |
|
| Authors:
H. B. McShane; C. P. Lee; T. Sheppard; IMPERIAL COLL OF SCIENCE TECHNOLOGY AND MEDICINE LONDON (UNITED KINGDOM)
|
| The changes in structure and substructure occurring during homogenization and hot rolling of an Al-5Mg alloy (AA 5083) have been examined; it is shown that a homogenization treatment is beneficial and that the resulting structure can be related to processing parameters; the results imply that the substructure morphology is dependent upon the total strain, but this has not been proven; the development of texture was also investigated and it is ... |
|
| LSI/VLSI (Large Scale Integration/Very Large Scale Integration) Ion Implanted GaAs (Gallium Arsenide) IC Processing |
JAN 1984 |
147 pages |
| Authors:
R. R. Zucca; C. Kirkpatrick; P. M. Asbeck; F. H. Eisen; C. P. Lee; ROCKWELL INTERNATIONAL THOUSAND OAKS CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER
|
 | This report covers a program designed to realize the full potential of GaAs integrated circuits by expanding and improving fabrication and material techniques. The main accomplishment of the program was the successful implementation of the fabrication of integrated circuits on 3-inch diameter GaAs wafers. In addition, this program covered many activities related to GaAs IC processing. These include: work on semi-insulating material growth and characterization, investigation of ion implantation techniques ... |
|
| LSI/VLSI (Large Scale Integration/Very Large Scale Integration) Ion Implanted GaAs (Gallium Arsenide) IC Processing. Appendix A. Feasibility Analysis of Gallium-Arsenide Mask Programmable Functions and Logic Arrays for High Performance Communications Syst |
JAN 1984 |
86 pages |
| Authors:
R. R. Zucca; C. Kirkpatrick; P. M. Asbeck; F. H. Eisen; C. P. Lee; ROCKWELL INTERNATIONAL THOUSAND OAKS CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER
|
| Circuits critical to the performance of advanced radio, radar and spread spectrum communications systems require advances in the state-of-the-art in semiconductor technology to meet the demands of advanced systems. As these systems increase in complexity, extensive digital circuitry is required in addition to the typical linear signal processing circuits. The power, size and weight of advanced systems also becomes unacceptable without continuous advances in semiconductor technology. Moreover an increasing trend ... |
|
| LSI/VLSI (Large Scale Integration/Very Large Scale Integration) Ion Implanted GaAs (Gallium Arsenide) IC Processing. Appendix B. Two-Dimensional Modeling of GaAs MESFET Devices for Integrated High-Speed Logic Circuits |
JAN 1984 |
130 pages |
| Authors:
R. R. Zucca; C. Kirkpatrick; P. M. Asbeck; F. H. Eisen; C. P. Lee; ROCKWELL INTERNATIONAL THOUSAND OAKS CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER
|
| This report summarizes the research carried out at North Carolina State University in support of the Rockwell International Program on 'LSI-VLSI Ion Implanted Planar GaAs IC Processing. The major thrust of the program at NCSU was to develop accurate computer models for analyzing the performance of short- channel GaAs MESFET devices as used in the Rockwell VLSI circuits. The modeling research is divided into three parts: (1) Two-dimensional finite difference ... |
|
| LSI/VLSI Ion Implanted GaAs Processing |
OCT 1982 |
|
| Authors:
C. P. Lee; Y. D. Shen; P. Asbeck; ROCKWELL INTERNATIONAL THOUSAND OAKS CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER
|
| This report covers the fifth quarter of a program aimed at fully realizing the potential of GaAs for digital integrated circuits employing depletion mode MESFETs. During this reporting period the processing of wafers with mask set AR6 containing the SD2FL 8 x 8 parallel multiplier has continued. DC parametric testing has shown good FET and diode characteristics and yield, as well as good results in terms of other process related ... |
|
| LSI/VLSI Ion Implanted GaAs IC Processing |
SEP 1981 |
71 pages |
| Authors:
R. Zucca; B. M. Welch; C. P. Lee; Y. D. Shen; P. Asbeck; ROCKWELL INTERNATIONAL THOUSAND OAKS CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER
|
| This report covers the third quarter of a program on LSI/VLSI ion implanted planar GaAs integrated circuit processing. The goal of this program is to realize the full potential of GaAs digital integrated circuits employing depletion mode MESFETs by developing the necessary processing methods and material capabilities to extend device complexity to VLSI. In the third quarter the digitization of mask set AR6 was completed. Masks are expected from the ... |
|
Reports by Author
